CHENMKO CHUMX1PT

CHENMKO ENTERPRISE CO.,LTD
CHUMX1PT
SURFACE MOUNT
Dual Silicon Transistor
VOLTAGE 50 Volts
CURRENT 150 mAmpere
APPLICATION
* Small Signal Amplifier .
FEATURE
* Surface mount package. (SC-88/SOT-363)
* Low saturation voltage VCE(sat)=0.4V(max.)(IC=50mA)
* Low cob. Cob=2.0pF(Typ.)
SC-88/SOT-363
* PC= 150mW (Total),120mW per element must not be exceeded.
* High saturation current capability.
(1)
(6)
* Two the 2SC2412K in one package.
* NPN Silicon Transistor
0.65
1.2~1.4
2.0~2.2
0.65
(4)
0.15~0.35 (3)
1.15~1.35
0.8~1.1
0.08~0.15
0~0.1
0.1 Min.
CIRCUIT
6
4
1
3
2.15~2.45
SC-88/SOT-363
Dimensions in millimeters
2SC2412K LIMITING VALUES
MAXIMUM RATINGES ( At TA = 25oC unless otherwise noted )
SYMBOL
MIN.
MAX.
UNITS
Collector - Base Voltage
RATINGS
Open Emitter
CONDITION
VCBO
-
60
Volts
Collector - Emitter Voltage
Open Base
VCEO
-
50
Volts
Emitter - Base Voltage
Open Collector
VEBO
-
7
Volts
IC
-
150
mAmps
Peak Collector Current
ICM
-
150
mAmps
Peak Base Current
IBM
-
15
mAmps
PTOT
-
150
mW
TSTG
-55
+150
o
C
C
C
Collector Current DC
Total Power Dissipation
TA ≤ 25OC; Note 1
Storage Temperature
Junction Temperature
Operating Ambient Temperature
Note
1. Transistor mounted on ceramic substrate 50mmX50mmx0.8t.
TJ
-
+150
o
TAMB
-55
+150
o
RATING CHARACTERISTIC CURVES ( CHUMX1PT )
2SC2412K CHARACTERISTICS
ELECTRICAL CHARACTERISTICS ( At TA = 25oC unless otherwise noted )
SYMBOL
MIN.
TYPE
MAX.
UNITS
Collector-base breakdown voltage
PARAMETERS
IC=50uA
CONDITION
BVCBO
60
-
-
Volts
Collector-emitter breakdown voltage
IC=1mA
BVCEO
50
-
-
Volts
Emitter-base breakdown voltage
IE=50uA
BVEBO
7
-
-
Volts
Collector Cut-off Current
IE=0; VCB=60V
ICBO
-
-
0.1
Emitter Cut-off Current
IC=0; VEB=7V
ICEO
-
-
0.1
DC Current Gain
VCE=6V
IC=1mA
hFE
120
-
560
Collector-Emitter Saturation Voltage
IC=50mA; IB=5mA
VCEsat
-
-
0.4
Volts
Output Collector Capacitance
IE=ie=0; VCB=12V;
f=1MHz
Cob
-
2
3.5
pF
Transition Frequency
IC=2mA; VCE=12V;
f=100MHz
fT
-
180
-
MHz
uA
RATING CHARACTERISTIC CURVES ( CHUMX1PT )
2SC2412K Typical Electrical Characteristics
100
COLLECTOR CURRENT : IC (mA)
VCE=6V
20
10
2
1
25 ΟC
55 OC
Ta=100 OC
5
0.5
0.2
mA
0.45 A
0.40m
A
m
35
0.
0.30mA
0.25mA
60
0.20mA
0.15mA
40
0.10mA
20
0
VCE=5V
Ta=100OC
25OC
200
-55OC
100
50
20
10
0.2
0.5 1
2
5
10 20
50 100 200
Ta=25
IC/IB=50
20
10
0.1
0.05
0.02
0.01
0.2
2
5
10
20
50
EMITTER CURRENT : IE (mA)
100
BASE COLLECTOR TIME CONSTANT : Cc·rbb' (ps)
100
1
0.5 1
2
5
10
20
50 100
100
50
20
10
0.2
0.5
1
2
5
EMITTER CURRENT : IE (mA)
2
5
10 20
50 100 200
0.5
IC/IB=10
0.2
0.1
Ta=100OC
25OC
-55OC
0.05
0.02
0.01
0.2
0.5 1
2
5
10
20
50 100 200
COLLECTOR CURRENT : IC (mA)
Ta=25OC
f=32MHZ
VCB=6V
200
0.5 1
COLLECTOR CURRENT : IC (mA)
Fig.6 Collector-emitter saturation
voltage vs. collector current
Fig.8 Base-collector time constant
vs. emitter current
200
50
10
0.2
2.0
COLLECTOR CURRENT : IC (mA)
Ta=25O
VCE=6V
100
IB=0A
1.6
VCE=5V
3V
1V
200
20
0.2
Fig.7 Gain bandwidth product vs.
emitter current
50
0.5
1.2
0.5
COLLECTOR CURRENT : IC (mA)
500
0.8
Ta=25OC
0.05mA
Fig. 5 Collector-emitter saturation
voltage vs. collector current
COLLECTOR SATURATION VOLTAGE : VCE(sat) (V)
500
0.4
500
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
Fig.4 DC current gain vs.
collector current (2)
TRANSITION FREQUENCY : fT (MHz)
0.50mA
80
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
BASE TO EMITTER VOLTAGE : VBE (V)
DC CURRENT GAIN : hFE
Ta=25OC
0
0.1
0
Fig.3 DC current gain vs.
collector current (1)
Grounded emitter output
characteristics
DC CURRENT GAIN : hFE
50
COLLECTOR CURRENT : IC (mA)
Fig.2
Grounded emitter propagation
characteristics
COLLECTOR SATURATION VOLTAGE : VCE(sat) (V)
Fig.1
10