VISHAY SI4982DY

Si4982DY
Vishay Siliconix
Dual N-Channel 100-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
100
rDS(on) (W)
ID (A)
0.150 @ VGS = 10 V
2.6
0.180 @ VGS = 6 V
2.4
D
SO-8
S1
1
8
D1
G1
2
7
D1
S2
3
6
D2
G2
4
5
D2
G
Top View
S
Ordering Information: Si4982DY
Si4982DY-T1 (with Tape and Reel)
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Limit
Drain-Source Voltage
VDS
100
Gate-Source Voltage
VGS
"20
Continuous Drain Current (TJ = 150_C)a
TA = 25_C
TA = 70_C
Pulsed Drain Current
Continuous Source Current (Diode Conduction)a
TA = 70_C
Operating Junction and Storage Temperature Range
V
2.6
ID
2.1
IDM
20
IS
1.7
TA = 25_C
Maximum Power Dissipationa
Unit
A
2.0
PD
1.3
W
TJ, Tstg
- 55 to 150
_C
Symbol
Limit
Unit
RthJA
62.5
_C/W
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta
Notes
a. Surface Mounted on FR4 Board, t v 10 sec.
Document Number: 70748
S-03950—Rev. B, 26-May-03
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Si4982DY
Vishay Siliconix
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter
Typa
Symbol
Test Condition
Min
Max
VGS(th)
VDS = VGS, ID = 250 mA
2
IGSS
VDS = 0 V, VGS = "20 V
"100
VDS = 100 V, VGS = 0 V
1
VDS = 100 V, VGS = 0 V, TJ = 55_C
20
Unit
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
IDSS
On-State Drain Currenb
ID(on)
Drain Source On-State
Drain-Source
On State Resistanceb
Forward Transconductanceb
Diode Forward
Voltageb
VDS = 5 V, VGS = 10 V
V
15
mA
A
VGS = 10 V, ID = 2.6 A
0.130
0.150
VGS = 6 V, ID = 2.4 A
0.140
0.180
gfs
VDS = 15 V, ID = 2.6 A
11
VSD
IS = 1.7 A, VGS = 0 V
rDS(on)
DS( )
nA
W
S
1.2
V
Dynamica
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
15
VDS = 50 V, VGS = 10 V, ID = 2.6 A
Rg
tr
Fall Time
tf
Source-Drain Reverse Recovery Time
trr
nC
4.0
1
td(on)
td(off)
30
2.7
VDD = 50 V, RL = 50 W
ID ^ 1 A, VGEN = 10 V, RG = 6 W
IF = 1.7 A, di/dt = 100 A/ms
4.4
10
20
10
20
30
60
10
20
60
90
W
ns
Notes
a. For design aid only; not subject to production testing.
b. Pulse test; pulse width v 300 ms, duty cycle v 2%.
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Document Number: 70748
S-03950—Rev. B, 26-May-03
Si4982DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
Transfer Characteristics
20
20
16
VGS = 10 thru 6 V
I D - Drain Current (A)
I D - Drain Current (A)
16
12
5V
8
4
3V
12
8
TC = 125_C
4
25_C
- 55_C
4V
0
0
0
1
2
3
4
0
1
2
5
6
Capacitance
On-Resistance vs. Drain Current
0.25
1200
0.20
C - Capacitance (pF)
r DS(on) - On-Resistance ( Ω )
4
VGS - Gate-to-Source Voltage (V)
VDS - Drain-to-Source Voltage (V)
VGS = 6 V
0.15
VGS = 10 V
0.10
900
Ciss
600
Coss
300
0.05
Crss
0.00
0
0
4
8
12
16
0
20
20
40
60
80
100
VDS - Drain-to-Source Voltage (V)
ID - Drain Current (A)
On-Resistance vs. Junction Temperature
Gate Charge
20
2.5
VDS = 50 V
ID = 2.6 A
16
r DS(on) - On-Resistance ( Ω )
(Normalized)
V GS - Gate-to-Source Voltage (V)
3
12
8
4
0
0
7
14
21
Qg - Total Gate Charge (nC)
Document Number: 70748
S-03950—Rev. B, 26-May-03
28
2.0
VGS = 10 V
ID = 2.6 A
1.5
1.0
0.5
0.0
- 50
- 25
0
25
50
75
100
125
150
TJ - Junction Temperature (_C)
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Si4982DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
0.30
20
r DS(on) - On-Resistance ( Ω )
I S - Source Current (A)
0.25
10
TJ = 150_C
TJ = 25_C
0.20
ID = 2.6 A
0.15
0.10
0.05
0.00
1
0
0.2
0.4
0.6
0.8
1.0
0
1.2
VSD - Source-to-Drain Voltage (V)
2
6
8
10
VGS - Gate-to-Source Voltage (V)
Threshold Voltage
Single Pulse Power
50
0.6
0.3
40
0.0
ID = 250 µA
Power (W)
V GS(th) Variance (V)
4
- 0.3
30
20
- 0.6
10
- 0.9
- 1.2
- 50
- 25
0
25
50
75
100
125
0
0.01
150
0.10
TJ - Temperature (_C)
1.00
10.00
Time (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
Notes:
0.1
PDM
0.1
0.05
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = RthJA = 62.5_C/W
0.02
3. TJM - TA = PDMZthJA(t)
Single Pulse
4. Surface Mounted
0.01
10 -4
10 -3
10 -2
10 -1
1
10
30
Square Wave Pulse Duration (sec)
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Document Number: 70748
S-03950—Rev. B, 26-May-03