2SJ294 Silicon P Channel MOS FET Application TO–220FM High speed power switching Features • • • • Low on–resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source • Suitable for Switching regulator, DC – DC converter • Avalanche Ratings 2 1 2 3 1 1. Gate 2. Drain 3. Source 3 Table 1 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit ——————————————————————————————————————————— Drain to source voltage VDSS –60 V ——————————————————————————————————————————— Gate to source voltage VGSS ±20 V ——————————————————————————————————————————— Drain current ID –20 A ——————————————————————————————————————————— Drain peak current ID(pulse)* –80 A ——————————————————————————————————————————— Body–drain diode reverse drain current IDR –20 A ——————————————————————————————————————————— Avalanche current IAP*** –20 A ——————————————————————————————————————————— Avalanche energy EAR*** 34 mJ ——————————————————————————————————————————— Channel dissipation Pch** 35 W ——————————————————————————————————————————— Channel temperature Tch 150 °C ——————————————————————————————————————————— Storage temperature Tstg –55 to +150 °C ——————————————————————————————————————————— * PW ≤ 10 µs, duty cycle ≤ 1 % ** Value at Tc = 25 °C *** Value at Tch = 25 °C, Rg ≥ 50 Ω 2SJ294 Table 2 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions ——————————————————————————————————————————— Drain to source breakdown voltage V(BR)DSS –60 — — V ID = –10 mA, VGS = 0 ——————————————————————————————————————————— Gate to source breakdown voltage V(BR)GSS ±20 — — V IG = ±100 µA, VDS = 0 ——————————————————————————————————————————— Gate to source leak current IGSS — — ±10 µA VGS = ±16 V, VDS = 0 ——————————————————————————————————————————— Zero gate voltage drain current IDSS — — –250 µA VDS = –50 V, VGS = 0 ——————————————————————————————————————————— Gate to source cutoff voltage VGS(off) –1.0 — –2.25 V ID = –1 mA, VDS = –10 V ——————————————————————————————————————————— Static drain to source on state resistance RDS(on) — 0.05 0.065 Ω ID = –10 A VGS = –10 V * ———————————————————————— — 0.07 0.095 Ω ID = –10 A VGS = –4 V * ——————————————————————————————————————————— Forward transfer admittance |yfs| 10 16 — S ID = –10 A VDS = –10 V * ——————————————————————————————————————————— Input capacitance Ciss — 2200 — pF VDS = –10 V ———————————————————————————————— Output capacitance Coss — 1000 — pF VGS = 0 ———————————————————————————————— Reverse transfer capacitance Crss — 300 — pF f = 1 MHz ——————————————————————————————————————————— Turn–on delay time td(on) — 25 — ns ID = –10 A ———————————————————————————————— Rise time tr — 130 — ns ———————————————————————————————— Turn–off delay time td(off) — 320 — ns VGS = –10 V RL = 3 Ω ———————————————————————————————— Fall time tf — 210 — ns ——————————————————————————————————————————— Body–drain diode forward voltage VDF — –1.1 — V IF = –20 A, VGS = 0 ——————————————————————————————————————————— Body–drain diode reverse recovery time trr — 160 — ns IF = –20 A, VGS = 0, diF / dt = 50 A / µs ——————————————————————————————————————————— * Pulse Test See characteristic curves of 2SJ291 2SJ294 Power vs. Temperature Derating –200 Maximum Safe Operation Area I D (A) –100 20 10 10 –50 10 PW –20 –10 Drain Current 30 DC –5 –2 –1 0µ s 1m =1 s 0m s( 1s Op era µs tio Operation in n( this area is Tc =2 limited by R DS(on) ho t) 5° C) –0.5 0 50 100 150 Case Temperature 200 Tc (°C) Ta = 25 °C –0.2 –1 –2 –5 –10 –20 –50 –100 Drain to Source Voltage V DS (V) Normalized Transient Thermal Impedance vs. Pulse Width 3 Normalized Transient Thermal Impedance γ s (t) Channel Dissipation Pch (W) 40 Tc = 25°C 1 D=1 0.5 0.3 0.1 0.03 0.2 θ ch – c(t) = γ s (t) • θ ch – c θ ch – c = 3.57 °C/W, Tc = 25 °C 0.1 0.05 PDM 0.02 1 0.0 e uls 0.01 10 µ 100 µ PW T PW p ot T h 1s D= 1m 10 m Pulse Width 100 m PW (S) 1 10