ETC 2SK2120

2SK2120
Silicon N Channel MOS FET
Application
TO–220CFM
High speed power switching
Features
•
•
•
•
Low on–resistance
High speed switching
Low drive current
4 V gate drive device can be driven from
5 V source
• Suitable for Switching regulator, DC – DC
converter
• Avalanche ratings
2
12
1
3
1. Gate
2. Drain
3. Source
3
Table 1 Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
———————————————————————————————————————————
Drain to source voltage
VDSS
60
V
———————————————————————————————————————————
Gate to source voltage
VGSS
±20
V
———————————————————————————————————————————
Drain current
ID
40
A
———————————————————————————————————————————
Drain peak current
ID(pulse)*
160
A
———————————————————————————————————————————
Body–drain diode reverse drain current
IDR
40
A
———————————————————————————————————————————
Avalanche current
IAP***
40
A
———————————————————————————————————————————
Avalanche energy
EAR***
137
mJ
———————————————————————————————————————————
Channel dissipation
Pch**
35
W
———————————————————————————————————————————
Channel temperature
Tch
150
°C
———————————————————————————————————————————
Storage temperature
Tstg
–55 to +150
°C
———————————————————————————————————————————
*
PW ≤ 10 µs, duty cycle ≤ 1 %
** Value at Tc = 25 °C
*** Value at Tch = 25 °C, Rg ≥ 50 Ω
2SK2120
Table 2 Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
———————————————————————————————————————————
Drain to source breakdown
voltage
V(BR)DSS
60
—
—
V
ID = 10 mA, VGS = 0
———————————————————————————————————————————
Gate to source breakdown
voltage
V(BR)GSS
±20
—
—
V
IG = ±200 µA, VDS = 0
———————————————————————————————————————————
Gate to source leak current
IGSS
—
—
±10
µA
VGS = ±16 V, VDS = 0
———————————————————————————————————————————
Zero gate voltage drain current
IDSS
—
—
250
µA
VDS = 50 V, VGS = 0
———————————————————————————————————————————
Gate to source cutoff voltage
VGS(off)
1.0
—
2.25
V
ID = 1 mA, VDS = 10 V
———————————————————————————————————————————
Static drain to source on state
resistance
RDS(on)
—
0.018
0.022
Ω
ID = 20 A
VGS = 10 V *
————————————————————————
—
0.023
0.028
Ω
ID = 20 A
VGS = 4 V *
———————————————————————————————————————————
Forward transfer admittance
|yfs|
22
35
—
S
ID = 20 A
VDS = 10 V *
———————————————————————————————————————————
Input capacitance
Ciss
—
3530
—
pF
VDS = 10 V
————————————————————————————————
Output capacitance
Coss
—
1480
—
pF
VGS = 0
————————————————————————————————
Reverse transfer capacitance
Crss
—
300
—
pF
f = 1 MHz
———————————————————————————————————————————
Turn–on delay time
td(on)
—
33
—
ns
ID = 20 A
————————————————————————————————
Rise time
tr
—
155
—
ns
————————————————————————————————
Turn–off delay time
td(off)
—
450
—
ns
VGS = 10 V
RL = 1.5 Ω
————————————————————————————————
Fall time
tf
—
220
—
ns
———————————————————————————————————————————
Body–drain diode forward
voltage
VDF
—
1.2
—
V
IF = 40 A, VGS = 0
———————————————————————————————————————————
Body–drain diode reverse
recovery time
trr
—
120
—
ns
IF = 40 A, VGS = 0,
diF / dt = 50 A / µs
———————————————————————————————————————————
* Pulse Test
■ See characteristic curve of 2SK1911.