MA R 1 1 0 9 The item can replace 2SK1109 Approved by: Checked by: Issued by: SPECIFICATION PRODUCT: N-channel MOSFET MODEL: MA R 1 1 0 9 SOT 2 3 HOPE MICROELECTRONIC CO.,LIMITED Tel:+86-755-82973805 Fax:+86-755-82973550 E-mail: [email protected] Page 1 of 5 http://www.hoperf.com MAR1109 The item can replacce 2SK1109 PACKAGE DRAWING (Unit: mm) DESCRIPTION The MAR1109 is suitable for converter of ECM. 0.8 1.8 MIN. FEATURES 1. Source 2. Drain 3. Gate 2 1.8 MIN. 1.5 1 5.5 ± 0.4 • Compact package • High forward transfer admittance 1000 µS TYP. (IDSS = 100 µA) 1600 µS TYP. (IDSS = 200 µA) • Includes diode and high resistance at G - S 3 2.9 ± 0.2 1.1 ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage Note SOT-23 VDSX 20 V VGDO –20 V Drain Current ID 10 mA Gate Current IG 10 mA Total Power Dissipation PT 80 mW Junction Temperature Tj 125 °C Storage Temperature Tstg –55 to +125 °C Gate to Drain Voltage EQUIVALENT CIRCUIT Drain Gate Source Note VGS = –1.0 V Remark Please take care of ESD (Electro Static Discharge) when you handle the device in this document. Tel:+86-755-82973806 Fax:+86-755-82973550 E-mail: [email protected] 2 http://www.hoperf.com MAR1109 The item can replace 2SK1109 ELECTRICAL CHARACTERISTICS (TA = 25°C) CHARACTERISTICS SYMBOL Zero Gate Voltage Drain Cut-off Current TEST CONDITIONS IDSS VDS = 5.0 V, VGS = 0 V VDS = 5.0 V, ID = 1.0 µA MIN. TYP. MAX. UNIT 40 600 µA −0.1 −1.0 V Gate Cut-off Voltage VGS(off) Forward Transfer Admittance | yfs1 | DS = V 5.0 V, ID = 30 µA, f = 1.0 kHz 350 µS Forward Transfer Admittance | yfs2 | DS = V 5.0 V, VGS = 0 V, f = 1.0 kHz 350 µS Input Capacitance Ciss VDS = 5.0 V, VGS = 0 V, f = 1.0 MHz 7.0 8.0 pF Noise Voltage NV See Test Circuit 1.8 3.0 µV NOISE VOLTAGE TEST CIRCUIT +4.5 V R = 1 kΩ JIS A NV (r.m.s) C = 10 pF Tel:+86-755-82973806 Fax:+86-755-82973550 E-mail: [email protected] 3 http//www.hoperf.com MAR1109 The item can replace 2SK1109 TYPICAL CHARACTERISTICS (TA = 25°C) GATE TO SOURCE CURRENT vs. GATE TO SOURCE VOLTAGE 40 DERATING FACTOR OF POWER DISSIPATION IG - Gate Current - µ A dT - Derating Factor - % 30 100 80 60 40 20 10 −1.0 −0.8 −0.6 −0.4 −0.2 −10 −30 −40 0 20 40 60 80 120 140 160 100 VGS - Gate to Source Voltage - V TA - Ambient Temperature - ˚C INPUT CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE DRAIN CURRENT vs. GATE TO SOURCE VOLTAGE CiSS - Input Capacitance - pF IDS IDSS = S = 2 30 0 µ =1 0 00 µ 0 µ A A A 0.8 0.6 S 0.4 IDS ID - Drain Current - mA 100 VDS = 0 V f = 1.0 MHz VDS = 5 V 0.2 −0.6 −0.4 −0.2 0 50 20 10 5 2 1 1 +0.2 2 5 10 20 50 100 VDS - Drain to Source Voltage - V VGS - Gate to Source Voltage - V VGS (off) - Gate to Source Cut-off Voltage - V |yfs| - Forward Transfer Admittance - µ S 0.2 0.4 0.6 0.8 1.0 −20 20 1.0 0 GATE TO SOURCE CUT-OFF VOLTAGE AND FORWARD TRANSFER ADMITTANCE vs. ZERO-GATE VOLTAGE DRAIN CURRENT CO-RELATION 10.0 VDS = 5 V 5.0 2.0 |yfs| 1.0 0.5 0.2 VGS (off) 0.1 0.05 0.02 0.01 10 20 50 100 200 500 1000 Zero-Gate Voltage Drain Current - µA Tel:+86-755-82973806 Fax:+86-755-82973550 E-mail: [email protected] 4 http://www.hoperf.com MAR1109 The item can replace 2SK1109 DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE 150 0.05 V VGS = 0 V 0 2 4 6 VGS = 0 V −0.05 V 80 4 6 8 400 0.10 V 300 0.05 V 4 6 8 VGS = 0 V 200 −0.05 V 0 2 10 −0.10 V 0 2 4 −0.15 V 6 8 VDS - Drain to Source Voltage - V VDS - Drain to Source Voltage - V DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE RANK: J36 0.15 V 0.05 V 420 VGS = 0 V 280 −0.05 V −0.10 V −0.15 V 140 2 4 6 0.15 V 0.10 V 720 0.05 V 540 VGS = 0 V −0.05 V 360 −0.10 V 180 −0.15 V 8 0 10 VDS - Drain to Source Voltage - V Tel:+86-755-82973806 10 RANK: J37 900 0.10 V 560 10 0.15 V 100 −0.15 V −0.10 V ID - Drain Current - µA 2 RANK: J35 500 0.05 V 0 0 DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE 240 0 −0.15 V −0.05 V −0.10 V DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE 0.10 V 700 VGS = 0 V VDS - Drain to Source Voltage - V 320 0 0.05 V 120 VDS - Drain to Source Voltage - V 0.15 V 160 0.10 V 180 0 10 RANK: J34 400 0 8 ID - Drain Current - µA 0 −0.15 V −0.05 V −0.10 V 0.15 V 240 60 ID - Drain Current - µA ID - Drain Current - µA 0.10 V 100 RANK: J33 300 200 50 ID - Drain Current - µA 0.15 V ID - Drain Current - µA RANK: J32 250 DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE 0 2 4 6 8 10 VDS - Drain to Source Voltage - V Fax:+86-755-82973550 E-mail: [email protected] 5 http://ww.hoperf.com