NEC 2SK4028

DATA SHEET
JUNCTION FIELD EFFECT TRANSISTOR
2SK4028
N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR
FOR IMPEDANCE CONVERTER OF ECM
DESCRIPTION
PACKAGE DRAWING (Unit: mm)
The 2SK4028 is suitable for converter of ECM.
1.2 ±0.1
+0.1
0.3 –0.05
MAX. 0.33
FEATURES
• High gain
• Low noise
−115 dB (VDD = 2.0 V, C = 5 pF, RL = 2.2 kΩ)
3
0.8 ±0.1
1.2 ±0.1
−1.0 dB (VDD = 2.0 V, C = 5 pF, RL = 2.2 kΩ)
0 to 0.02
2
1
• Ultra thin thickness package
0.4
t = 0.3 mm TYP.
+0.1
0.13 –0.05
0.4
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK4028
3pXSOF03 (0812)
0.2 +0.1
–0
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
EQUIVALENT CIRCUIT
Drain to Source Voltage (VGS = −1.0 V)
VDSX
20
V
Gate to Drain Voltage
VGDO
−20
V
Drain Current
ID
10
mA
Gate Current
IG
10
mA
Total Power Dissipation
PT
100
mW
Junction Temperature
Tj
125
°C
Storage Temperature
Tstg
−55 to +125
°C
2
3
1
1: Source
2: Drain
3: Gate
Caution Please take care of ESD (Electro Static Discharge) when you handle the device in this document.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D17529EJ1V0DS00 (1st edition)
Date Published April 2005 NS CP(K)
Printed in Japan
2005
2SK4028
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTICS
SYMBOL
Zero Gate Voltage Drain Cut-off Current
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
90
250
430
µA
−0.37
−1.0
V
IDSS
VDS = 2.0 V, VGS = 0 V
Gate Cut-off Voltage
VGS(off)
VDS = 2.0 V, ID = 1.0 µA
Forward Transfer Admittance
| yfs1 |
VDS = 2.0 V, ID = 30 µA, f = 1.0 kHz
320
470
µS
| yfs2 |
VDS = 2.0 V, VGS = 0 V, f = 1.0 kHz
800
1600
µS
Input Capacitance
Ciss
VDS = 2.0 V, VGS = 0 V, f = 1.0 MHz
4.0
pF
Voltage Gain
GV
VDD = 2.0 V, C = 5 pF, RL = 2.2 kΩ,
−1.0
dB
−115
dB
VIN = 10 mV, f = 1 kHz
Noise Voltage
NV
VDD = 2.0 V, C = 5 pF, RL = 2.2 kΩ,
A-curve
IDSS CLASSIFICATION
MARKING
DE
DF
DH
DJ
IDSS (µA)
90 to 180
150 to 240
210 to 350
320 to 430
GAIN TEST CIRCUIT
VDD
RL
Out
C
NOISE VOLTAGE TEST CIRCUIT
VDD
RL
JIS A
NV (r.m.s)
C
2
Data Sheet D17529EJ1V0DS
2SK4028
TYPICAL CHARACTERISTICS (TA = 25°C)
DERATING FACTOR OF POWER DISSIPATION
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
1000
Pulsed
0.20 V
100
ID - Drain Current - µA
dT - Derating Factor - %
120
80
60
40
800
0.15 V
0.10 V
600
0.05 V
400
−0.05 V
200
20
VGS = 0 V
0
0
0
25
50
75
100
125
150
0
175
2
4
6
8
10
VDS - Drain to Source Voltage - V
TA - Ambient Temperature - °C
GATE TO SOURCE CURRENT vs.
GATE TO SOURCE VOLTAGE
DRAIN CURRENT vs.
GATE TO SOURCE VOLTAGE
IGS - Gate to Source Current - µA
40
ID - Drain Current - µA
30
20
10
−0.8
−0.6
−0.4 −0.2
0
0.2
0.4
0.6
0.8
−10
−20
−30
−40
VGS - Gate to Source Voltage - V
VGS - Gate to Source Voltage - V
INPUT CAPACITANCE vs.
DRAIN TO SOURCE VOLTAGE
Ciss - Input Capacitance - pF
VGS = 0 V
f = 1.0 MHz
1
1
10
100
10
| yfs | - Forward Transfer Admittance - mS
VGS(off) - Gate Cut-off Voltage - V
10
FORWARD TRANSFER ADMITTANCE AND GATE
CUT-OFF VOLTAGE vs. ZERO GATE VOLTAGE
DRAIN CURRENT
VDS = 2.0 V
| yfs |
1
VGS(off)
0.1
VDS - Drain to Source Voltage - V
10
100
1000
IDSS - Zero Gate Voltage Drain Current - µA
Data Sheet D17529EJ1V0DS
3
2SK4028
VOLTAGE GAIN vs. DRAIN CURRENT
NOISE VOLTAGE vs. DRAIN CURRENT
2
-110
GV - Voltage Gain - dB
1
0
-1
NV - Noise Voltage - dB
VDD = 2.0 V
C = 5 pF
RL = 2.2 kΩ
VIN = 10 mV
f = 1 kHz
-2
-3
-4
-112
-114
-116
-118
-120
-5
10
100
1000
10
100
IDSS - Drain Current - µA
IDSS - Drain Current - µA
4
VDD = 2.0 V
C = 5 pF
RL = 2.2 kΩ
Data Sheet D17529EJ1V0DS
1000
2SK4028
• The information in this document is current as of April, 2005. The information is subject to change
without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets or
data books, etc., for the most up-to-date specifications of NEC Electronics products. Not all
products and/or types are available in every country. Please check with an NEC Electronics sales
representative for availability and additional information.
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M8E 02. 11-1