NPN S I L I C O N T R A N S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. HE13002 █ APPLICATIONS High Voltage switching And Speed Switching █ ABSOLUTE MAXIMUM RATINGS（Ta=25℃） TO-92 T stg ——Storage Temperature………………………… -55~150℃ T j ——Junction Temperature…………………………………150℃ P C ——Collector Dissipation…………………………………1W 1―Emitter，E ２―Collector，C ３―Base，B VCBO ——Collector-Base Voltage………………………………600V VCEO——Collector-Emitter Voltage……………………………400V VE B O ——Emitter -Base Voltage………………………………9V I C —— Collector Current…………………………………… 1 A █ ELECTRICAL CHARACTERISTICS（Ta=25℃） Symbol Characteristics Min Typ Max Unit Test Conditions BVCBO Collector-Base Breakdown Voltage ６００ Ｖ IC=1mA, IE=0 BVCEO Collector-Emitter Breakdown Voltage ４００ Ｖ IC=10mA, IB=0 BVEBO Emitter-Base Breakdown Voltage ９ Ｖ ICBO Collector Cut-off Current １０ IEBO Emitter-Base Cut-off Current １０ HFE DC Current Gain １０ ４０ VCE=10V, IC=0.1A VCE(sat1) Collector- Emitter Saturation Voltage ０．５ Ｖ IC=0.2A, IB =40mA VCE(sat2) Collector- Emitter Saturation Voltage １．０ Ｖ IC=0.5A, IB =100mA VCE(sat3) Collector- Emitter Saturation Voltage ３ Ｖ IC=0.8A, IB =200mA VBE(sat) Base-Emitter Saturation Voltage １．２ Ｖ IC=0.5A, IB=100mA fT Current Gain-Bandwidth Product ８ tON Turn-On Time tSTG Storage Time tF Fall Time IE=1mA，IC=0 μＡ VCB=500V, IE=0 μＡ VEB=9V, IC=0 ＭＨｚ VCE=10V, IC=0.1A,f=1ＭＨｚ VCC=125V, IC=1A １．１ μＳ IB1 =-IB2 =0.2A ４．０ μＳ ０．７ μＳ █ hFE Classification Ｈ１ Ｈ２ Ｈ３ Ｈ４ Ｈ５ １０－１６ １４－２１ １９－２６ ２４－３１ ２９－４０ RL=125Ω NPN S I L I C O N T R A N S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. HE13002