PN P S I L I C O N T RA N S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. H1144 █ APPLICATIONS Medium frequency power amplifier，Medium Seed switching. █ ABSOLUTE MAXIMUM RATINGS（Ta=25℃） TO-126ML Tstg——Storage Temperature………………………… -55~150℃ Tj——Junction Temperature……………………………… 150℃ PC——Collector Dissipation（Tc=25℃）…………………… 10W PC——Collector Dissipation（TA=25℃）…………………… 1.5W VCBO——Collector-Base Voltage………………………… -120V 1―Emitter，E 2―Collector，C 3―Base，B VCEO——Collector-Emitter Voltage……………………… -100V VEBO——Emitter-Base Voltage……………………………… -6V IC——Collector Current……………………………………-1.5A █ ELECTRICAL CHARACTERISTICS（Ta=25℃） Symbol Characteristics Min Typ Max Unit Test Conditions BVCBO Collector-Base Breakdown Voltage -120 V IC=-10μA, IE=0 BVCEO Collector-Emitter Breakdown Voltage -100 V IC=-1mA, IB=0 BVEBO Emitter-Base Breakdown Voltage -6 V IE=-10μA，IC=0 ICBO Collector Cut-off Current -100 nA VCB=-100V, IE=0 IEBO Emitter Cut-off Current -100 nA VEB=-4V, IC=0 HFE（1） DC Current Gain 100 HFE（2） DC Current Gain 30 VCE=-5V, IC=-100mA 400 VCE=-5V, IC=-1A VCE(sat) Collector- Emitter Saturation Voltage 0.18 0.5 V IC=-500mA, IB=-50mA VBE(sat) Base-Emitter Saturation Voltage 0.85 1.2 V IC=-500mA, IB=-50mA tON Turn-On Time 80 nS tSTG Storage 750 nS Time See specified test circuit tF Fall Time 40 nS ft Current Gain-Bandwidth Product 100 MHz VCE=-10V, IC=-50mA, Output Capacitance 18 pF VCB=-10V, IE=0,f=1MHz Cob █ hFE Classification R S T 100—200 140—280 200—400