Shantou Huashan Electronic Devices Co.,Ltd. PNP S I L I C O N T R A N S I S T O R HSBD236 █ APPLICATIONS Medium Power Linear switching Applications █ ABSOLUTE MAXIMUM RATINGS（Ta=25℃） Tstg ——Storage Temperature………………………… -55~150℃ T j ——Junction Temperature……………………………… 150℃ PC——Collector Dissipation（Tc=25℃）…………………… 25W 1―Emitter, E VCBO ——Collector-Base Voltage…………………………… -60V 2―Collector，C 3―Base，B VCEO ——Collector-Emitter Voltage………………………… -60V VCER ——Collector-Emitter Voltage………………………… -60V VEBO——Emitter-Base Voltage………………………………… -5V IC——Collector Current（Pulse）………………………………… -6A IC——Collector Current（DC）……………………………… -2A █ ELECTRICAL CHARACTERISTICS（Ta=25℃） Symbol Characteristics ICBO Collector Cut-off Current IEBO Emitter Cut-off Current Min Typ Max Unit Test Conditions -100 μA VCB=-60V, IE=0 -1 mA VEB=-5V, IC=0 *HFE（1） DC Current Gain 40 VCE=-2V, IC=-150mA *HFE（2） DC Current Gain 25 VCE=-2V, IC=-1A *VCE(sat) Collector- Emitter Saturation Voltage -0.6 V IC=-1A, IB=-0.1A *VBE(on) Base-Emitter On Voltage -1.3 V VCE=-2V, IC=-1A VCEO(sus) Collector-Emitter Sustaining Voltage -60 V IC=-100mA, IB=0 3 MHz ft Current Gain-Bandwidth Product * Pulse Test:PW=300μS,Duty Cycle=1.5% Pulsed VCE=-10V, IC=-250mA,