Product specification BD438 Features Medium Power Linear and Switching 1 EMITTER Applications 2 COLLECTOR 3 BASE Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit VCBO -45 V Collector-Emitter Voltage VCES -45 V Collector-Emitter Voltage VCEO -45 V Emitter-Base Voltage VEBO -5 V Collector Current (DC) IC -4 A Collector Current (Pulse) * ICP -7 A Base Current IB -1 A Collector Dissipation (TC=25 ) PC 25 W Collector-Base Voltage Junction Temperature TJ 150 Storage Temperature TSTG -55 to 150 * Pulse Test: PW=300 s, duty Cycle=1.5% Pulsed Electrical Characteristics Ta = 25 Parameter Collector-Emitter Sustaining Voltage Symbol Testconditons Min Typ Max VCEO(sus) IC = -100mA, IB = 0 ICBO VCB = -45V, IE = 0 -100 Collector Cut-off Current ICES VCE = -45V -100 Emitter Cut-off Current IEBO VEB = -5V, IC = 0 Collector Cut-off Current DC Current Gain * hFE Collector-Emitter Saturation Voltage * VCE(sat) Base-Emitter ON Voltage * VBE(on) -45 V VCE = -5V, IC = -10mA 30 130 VCE = -1V, IC = -500mA 85 140 VCE = -1V, IC = -2A 40 IC = -2A, IB = -0.2A -0.2 VCE =-5V, IC = -10mA -0.58 VCE =-1V, IC = -2A Current Gain Bandwidth Product fT VCE = -1V, IC = -250mA Unit A -1 mA -0.6 V V -1.2 3 A V MHz * Pulse Test: PW=300 s, duty Cycle=1.5% Pulsed 1 http://www.twtysemi.com [email protected] 4008-318-123 1 of 1