INFINEON PTFA192001E

PTFA192001E
PTFA192001F
Confidential, Limited Internal Distribution
Thermally-Enhanced High Power RF LDMOS FETs
200 W, 1930 – 1990 MHz
Description
The PTFA192001E and PTFA192001F are 200-watt LDMOS FETs
intended for single- and two-carrier WCDMA and CDMA applications
from 1930 to 1990 MHz. Features include input and output matching,
and thermally-enhanced packages with slotted or earless flanges.
Manufactured with Infineon's advanced LDMOS process, these
devices provide excellent thermal performance and superior reliability.
PTFA192001F
Package H-37260-2
Features
2-Carrier WCDMA Drive-up
VDD = 30 V, IDQ = 1600 mA, ƒ = 1960 MHz, 3GPP
WCDMA signal, P/A R = 8 dB, 10 MHz carrier spacing
-25
30
Efficiency
-30
•
Pb-free, RoHS-compliant and thermally-enhanced
packages
•
Broadband internal matching
•
Typical two-carrier WCDMA performance at 1990
MHz, 30 V
- Average output power = 47.0 dBm
- Linear Gain = 15.9 dB
- Efficiency = 27%
- Intermodulation distortion = –36 dBc
- Adjacent channel power = –41 dBc
•
Typical single-carrier WCDMA performance at 1960
MHz, 30 V, 3GPP signal, P/AR = 7.5 dB
- Average output power = 48.5 dBm
- Linear Gain = 15.9 dB
- Efficiency = 34%
- Intermodulation distortion = –37 dBc
- Adjacent channel power = –40 dBc
•
Typical CW performance, 1960 MHz, 30 V
- Output power at P–1dB = 240 W
- Efficiency = 57%
•
Integrated ESD protection: Human Body Model,
Class 2 (minimum)
•
Excellent thermal stability, low HCI drift
•
Capable of handling 5:1 VSWR @ 30 V, 200 W
(CW) output power
25
IM3
-35
20
-40
15
-45
10
ACPR
-50
Drain Efficiency (%)
IM3 (dBc), ACPR (dBc)
PTFA192001E
Package H-36260-2
5
-55
0
34
36
38
40
42
44
46
48
Output Power, avg. (dBm)
All published data at TCASE = 25°C unless otherwise indicated
*See Infineon distributor for future availability.
ESD: Electrostatic discharge sensitive device—observe handling precautions!
Data Sheet
1 of 11
Rev. 05, 2008-05-15
PTFA192001E
PTFA192001F
Confidential, Limited Internal Distribution
RF Characteristics
WCDMA Measurements (tested in Infineon test fixture)
VDD = 30 V, IDQ = 1.8 A, POUT = 50 W average
ƒ1 = 1985 MHz, ƒ2 = 1995 MHz, 3GPP signal, channel bandwidth = 3.84 MHz , peak/average = 8 dB @ 0.01% CCDF
Characteristic
Symbol
Min
Typ
Max
Unit
Gain
Gps
15.3
15.9
—
dB
Drain Efficiency
ηD
26.5
27
—
%
Intermodulation Distortion
IMD
—
–36
–34
dBc
Two-tone Measurements (not subject to production test—verified by design/characterization in Infineon test fixture)
VDD = 30 V, IDQ = 1.6 A, POUT = 200 W PEP, ƒ = 1960 MHz, tone spacing = 1 MHz
Characteristic
Symbol
Min
Typ
Max
Unit
Gain
Gps
—
15.9
—
dB
Drain Efficiency
ηD
—
41
—
%
Intermodulation Distortion
IMD
—
–30
—
dBc
DC Characteristics
Characteristic
Conditions
Symbol
Min
Typ
Max
Unit
Drain-Source Breakdown Voltage
VGS = 0 V, IDS = 10 mA
V(BR)DSS
65
—
—
V
Drain Leakage Current
VDS = 28 V, VGS = 0 V
IDSS
—
—
1.0
µA
Drain Leakage Current
VDS = 63 V, VGS = 0 V
IDSS
—
—
10.0
µA
On-State Resistance
VGS = 10 V, VDS = 0.1 V
RDS(on)
—
0.05
—
Ω
Operating Gate Voltage
VDS = 30 V, IDQ = 1.8 A
VGS
2.0
2.5
3.0
V
Gate Leakage Current
VGS = 10 V, VDS = 0 V
IGSS
—
—
1.0
µA
Maximum Ratings
Parameter
Symbol
Value
Unit
Drain-Source Voltage
VDSS
65
V
Gate-Source Voltage
VGS
–0.5 to +12
V
Junction Temperature
TJ
200
°C
Total Device Dissipation
PD
625
W
3.57
W/°C
Above 25°C derate by
Storage Temperature Range
TSTG
–40 to +150
°C
Thermal Resistance (TCASE = 70°C, 200 W CW)
RθJC
0.28
°C/W
Data Sheet
2 of 11
Rev. 05, 2008-05-15
PTFA192001E
PTFA192001F
Confidential, Limited Internal Distribution
Ordering Information
Type and Version
Package Type
Package Description
Marking
PTFA192001E
V4
H-36260-2
Thermally-enhanced slotted flange, single-ended
PTFA192001E
PTFA192001F
V4
H-37260-2
Thermally-enhanced earless flange, single-ended
PTFA192001F
Typical Performance (data taken in a production test fixture)
Intermodulation Distortion Products v. Output Power
Broadband Performance
VDD = 30 V, IDQ = 1600 mA,
ƒ1 = 1957.5 MHz, ƒ2 = 1962.5 MHz
VDD = 30 V, IDQ = 1600 mA, POUT = 50 W
40
Up
Low
IM5
IM3
-40
-50
35
-10
30
-15
25
20
-25
15
-30
Gain
IM7
-60
100
-20
Efficiency
Input Return Loss (dB)
-30
10
-5
Return Loss
Gain (dB), Efficiency (%)
Intermodulation Distortion (dBc)
-20
1000
Output Power, PEP (W)
10
1860
1890
1920
1950
1980
2010
-35
2040
Frequency (MHz)
*See Infineon distributor for future availability.
Data Sheet
3 of 11
Rev. 05, 2008-05-15
PTFA192001E
PTFA192001F
Confidential, Limited Internal Distribution
Typical Performance (cont.)
Intermodulation Distortion Products
vs. Tone Spacing
Power Sweep, CW Conditions
VDD = 30 V, IDQ = 1800 mA, ƒ = 1990 MHz
VDD = 30 V IDQ = 1800 m A , ƒ = 1960 MHz,
P OUT = 53 dBm PEP
16
55
Gain (dB)
Gain
15
45
14
35
TCASE = 25°C
TCASE = 90°C
13
Efficiency
25
12
-20
Intermodulation Distortion (dBc)
65
Drain Efficiency (%)
17
15
0
40
80
120
160
200
-25
-30
3rd Order
-35
-40
5th
-45
7th
-50
-55
240
0
5
10
35
40
Two-carrier WCDMA at Selected Biases
VDD = 30 V, ƒ = 1960 MHz, 3GPP WCDMA signal,
P/AR = 8 dB, 10 MHz carrier spacing, series show IDQ
40
Efficiency
-35
35
IM3
30
IM5
-45
25
IM7
-50
20
15
-55
10
-60
44
46
48
50
52
54
2.0 A
-35
3rd Order IMD (dBc)
-30
-30
Drain Efficiency (%)
Intermodulation Distortion (dBc)
30
2-Tone Drive-up
45
2.2 A
1.8 A
-40
-45
1.4 A
-50
1.6 A
-55
56
34
Output Power, PEP (dBm)
Data Sheet
25
VDD = 30 V, IDQ = 1600 mA,
ƒ = 1960 MHz, tone spacing = 1 MHz
-25
42
20
Tone Spacing (MHz)
Output Power (W)
-40
15
36
38
40
42
44
46
Output Power, PEP (dBm)
4 of 11
Rev. 05, 2008-05-15
PTFA192001E
PTFA192001F
Confidential, Limited Internal Distribution
Typical Performance (cont.)
Output Peak-to-Average Ratio Compression
(PARC) at various Power levels
Power Gain vs. Power Sweep (CW) over
Temperature
VDD = 30 V, IDQ = 1500 mA, ƒ = 1990 MHz,
single-carrier WCDMA input PAR = 7.5 dB
VDD = 30 V, IDQ = 1500 m A, ƒ = 1990 MHz
18
100
Power Gain (dB)
Probability (%)
-15C
17
10
48 dBm
1
46 dBm
52 dBm
0.1
Input
50.5 dBm
0.01
25C
16
85C
15
14
13
50 dBm
12
0.001
1
2
3
4
5
6
7
1
8
10
Voltage Sweep
Bias Voltage vs. Temperature
IDQ = 1800 mA, ƒ = 1960 MHz, tone spacing = 1 MHz,
Output Power (PEP) = 53 dBm
Voltage normalized to typical gate voltage,
series show current
-20
40
Efficiency
IM3 Up
30
-40
20
Gain
-50
Normalized Bias Voltage (V)
50
Gain (dB), Drain Efficiency (%)
3rd Order Intermodulation
Distortion (dBc)
-10
25
27
29
31
1.03
0.44 A
1.02
1.32 A
1.01
2.20 A
33
3.30 A
1.00
6.61 A
0.99
9.91 A
0.98
13.22 A
0.97
16.52 A
0.96
0.95
-20
10
23
1000
Output Power (W)
Peak-to-Average (dB)
-30
100
0
20
40
60
80
100
Case Temperature (°C)
Supply Voltage (V)
Data Sheet
5 of 11
Rev. 05, 2008-05-15
PTFA192001E
PTFA192001F
Confidential, Limited Internal Distribution
N
Broadband Circuit Impedance
Z0 = 50 Ω
D
0.1
Z Source
Z Load
Z Load
2020 MHz
1900 MHz
MHz
R
jX
R
jX
1900
8.033
–8.054
0.943
2.60
1930
7.611
–7.612
0.932
2.87
1960
7.230
–7.197
0.886
3.15
1990
6.839
–6.839
0.863
3.44
2020
6.541
–6.496
0.829
3.71
A
Z Load Ω
0.2
0.1
Z Source
0 .1
2020 MHz
1900 MHz
--- W
Z Source Ω
Frequency
DL
S TOW AR
NGT H
E
L
VE
OAD -
S
0.0
G
See next page for circuit information
Data Sheet
6 of 11
Rev. 05, 2008-05-15
PTFA192001E
PTFA192001F
Confidential, Limited Internal Distribution
Reference Circuit
VDD
2K V
R5
2K V
R8
2K V
R3
LM7805
QQ1
0.001µF
C3
0.001µF
C1
1.2K V
R1
0.001µF
C2
B C P56
1.3K V
Q1
R2
R6
5.1K V
C5
0.1µF
VDD
C6
10pF
C11
10pF
l7
l1
C23
0.7pF
DUT
l2
l3
l4
l5
C14
2.2µF
l11
l6
l8
l12
C25
0.7pF
l 13
C24
0.7pF
l10
l 14
C26
0.7pF
R7
5.1K V
C8
4.7µF
16V
C9
0.1µF
C15
0.1µF
C16
10µF
50V
l9
C7
10pF
RF_IN
C13
1µF
C12
1µF
C28
10pF
l15
l16
RF_OUT
l17
C27
0.7pF
a 1 9 2 0 1 e f _ sc h
C4
4.7µF
16V
L1
L2
C10
10pF
C17
10pF
C18
1µF
C19
1µF
C20
2.2µF
C21
0.1µF
C22
10µF
50V
Reference circuit schematic for ƒ = 1960 MHz
Circuit Assembly Information
DUT
PTFA192001E or PTFA192001F
PCB
0.76 mm [.030"] thick, εr = 3.48
Microstrip
l1
l2
l3
l4 (taper)
l5
l6
l7, l8
l9, l10
l11
l12 (taper)
l13 (taper)
l14 (taper)
l15
l16
l17
Electrical Characteristics at 1960 MHz 1
0.038
0.071
0.022
0.060
0.040
0.026
0.123
0.258
0.067
0.017
0.024
0.019
0.009
0.021
0.096
LDMOS Transistor
Rogers RO4350
1 oz. copper
Dimensions: L x W ( mm)
Dimensions: L x W (in.)
λ, 50.0 Ω
λ, 50.0 Ω
λ, 43.0 Ω
λ, 43.0 Ω / 6.9 Ω
λ, 6.9 Ω
λ, 6.9 Ω
λ, 60.0 Ω
λ, 50.9 Ω
λ, 5.0 Ω
λ, 5.0 Ω / 7.2 Ω
λ, 7.2 Ω / 12.3 Ω
λ, 12.3 Ω / 41 Ω
λ, 41.0 Ω
λ, 41.0 Ω
λ, 50.0 Ω
3.51 x 1.70
6.60 x 1.70
2.01 x 2.16
5.28 x 2.16 / 20.32
3.33 x 20.32
2.21 x 20.32
11.48 x 1.24
23.88 x 1.65
5.59 x 28.91
1.42 x 28.91 / 19.51
2.08 x 19.51 / 10.67
1.78 x 10.67 / 2.29
0.79 x 2.29
1.85 x 2.29
8.99 x 1.70
0.138 x 0.067
0.260 x 0.067
0.079 x 0.085
0.208 x 0.085 /
0.131 x 0.800
0.087 x 0.800
0.452 x 0.049
0.940 x 0.065
0.220 x 1.138
0.056 x 1.138 /
0.082 x 0.768 /
0.070 x 0.420 /
0.031 x 0.090
0.073 x 0.090
0.354 x 0.067
0.800
0.768
0.420
0.090
1Electrical characteristics are rounded.
Data Sheet
7 of 11
Rev. 05, 2008-05-15
PTFA192001E
PTFA192001F
Confidential, Limited Internal Distribution
Reference Circuit (cont.)
RO4350_.030
RO4350_.030
V DD
C2
C11
C1
R3
R8
QQ1
C3
C4
L1
V DD
C16
C5 R6 C6
R5
C12
C13
C14
Q1
R1
C23
R2
C25
C28
C15
RF_IN
RF_OUT
C7
C8
C26
C9
C27
V DD
C24
C10
C21
C22
C20
C19
C18
R7
L2
C17
A192001in_01
A192001out_01
a192001ef _assy
Reference circuit assembly diagram* (not to scale)
Component
Description
Suggested Manufacturer
P/N or Comment
C1, C2, C3
C4, C8
C5, C9, C15, C21
C6, C10
C7, C28
C11, C17
C12, C13, C18, C19
C14, C20
C16, C22
C23, C24, C25,
C26, C27
L1, L2
Q1
QQ1
R1
R2
R3, R5
R6, R7
R8
Capacitor, 0.001 µF
Capacitor, 4.7 µF, 16 V
Capacitor, 0.1 µF
Ceramic capacitor, 10 pF
Ceramic capacitor, 10 pF
Capacitor, 10 pF
Ceramic capacitor, 1 µF
Capacitor, 2.2 µF
Tantalum capacitor, 10 µF, 50 V
Capacitor, 0.7 pF
Digi-Key
Digi-Key
Digi-Key
ATC
ATC
AVX
Digi-Key
Digi-Key
Garrett Electronics
AVX
PCC1772CT-ND
PCS3475CT-ND
PCC104BCT-ND
100A 100
100B 100
08051J100GBTTR
445-1411-1-ND
445-1447-2-ND
TPSE106K050R0400
08051J0R7BBTTR
Ferrite, 8.9 mm
Transistor
Voltage regulator
Chip resistor 1.2 k-ohms
Chip resistor 1.3 k-ohms
Chip resistor 2 k-ohms
Chip resistor 5.1 k-ohms
Potentiometer 2 k-ohms
Elna Magnetics
Infinion Technologies
National Semiconductor
Digi-Key
Digi-Key
Digi-Key
Digi-Key
Digi-Key
BDS 4.6/3/8.9-4S2
BCP56
LM7805
P1.2KGCT-ND
P1.3KGCT-ND
P2KECT-ND
P5.1KECT-ND
3224W-202ETR-ND
*Gerber files for this circuit available on request
Data Sheet
8 of 11
Rev. 05, 2008-05-15
PTFA192001E
PTFA192001F
Confidential, Limited Internal Distribution
Package Outline Specifications
Package H-36260-2
45° X 2.03
[.080]
2X 12.70
[.500]
4X R 1.52
[R.060]
C
L
4.83±0.50
[.190±.020]
D
S
+0.10
LID 13.21 –0.15
[.520 +.004]
–.006
FLANGE 13.72
[.540]
C
L
23.37±0.51
[.920±.020]
2X R1.63
[R.064]
G
27.94
[1.100]
SPH 1.57
[.062]
22.35±0.23
[.880±.009]
C
L
4.11±0.38
[.162±.015]
0.0381 [.0015] -A-
1.02
[.040]
34.04
[1.340]
h
- 3 6 +
3 7 2 6 0 - 2 _ 3 6 2 6 0
/
0 4 - 2 5 - 0 8
Diagram Notes—unless otherwise specified:
1. Interpret dimensions and tolerances per ASME Y14.5M-1994.
2. Pins: D = drain, S = source, G = gate.
3. Lead thickness: 0.10 +0.051/–0.025 [.004 +.002/–.001].
4. Gold plating thickness:
S, D, G - flange & leads: 1.14 ± 0.38 micron [45 ± 15 microinch]
5. All tolerances ± 0.25 [0.01] / ± 0.127 [.005] unless specified otherwise.
6. Primary dimensions are mm. Alternate dimensions are inches.
Find the latest and most complete information about products and packaging at the Infineon Internet page
http://www.infineon.com/rfpower
Data Sheet
9 of 11
Rev. 05, 2008-05-15
PTFA192001E
PTFA192001F
Confidential, Limited Internal Distribution
Package Outline Specifications (cont.)
Package H-37260-2
45° X 2.031
[.080]
2X 12.70
[.500]
CL
4.83±0.50
[.190±.020]
D
13.72
[.540]
C
L
LID 13.21 +0.10
–0.15
[.520 +.004 ]
–.006
23.37±0.51
[.920±.020]
G
+0.381
4X R0.508 –0.127
[R.020 +.015 ]
–.005
LID 22.35±0.23
[.880±.009]
4.11±0.38
[.162±.015]
0.0381 [.0015]
1.02
[.040]
-Ah - 3 6 + 3 7 2 6 0 - 2 _ 3 7 2 6 0 0
/ 4 - 2 5 - 0 8
S
SPH 1.57
[.062]
FLANGE 23.11
[.910]
Diagram Notes—unless otherwise specified:
1. Interpret dimensions and tolerances per ASME Y14.5M-1994.
2. Pins: D = drain, S = source, G = gate.
3. Lead thickness: 0.10 +0.051/–0.025 [.004 +.002/–.001].
4. Gold plating thickness:
S, D, G - flange & leads: 1.14 ± 0.38 micron [45 ± 15 microinch]
5. All tolerances ± 0.25 [0.01] / ± 0.127 [.005] unless specified otherwise.
6. Primary dimensions are mm. Alternate dimensions are inches.
Find the latest and most complete information about products and packaging at the Infineon Internet page
http://www.infineon.com/rfpower
Data Sheet
10 of 11
Rev. 05, 2008-05-15
PTFA192001E/F
Confidential, Limited Internal Distribution
Revision History:
2008-05-15
2007-12-06, Data Sheet
Previous Version:
Data Sheet
Page
Subjects (major changes since last revision)
1, 3, 9, 10
1, 2
Update to product V4. Update package outline diagrams.
Update specifications.
We Listen to Your Comments
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Your feedback will help us to continuously improve the quality of this document.
Please send your proposal (including a reference to this document) to:
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or +1 408 776 0600 International
GOLDMOS® is a registered trademark of Infineon Technologies AG.
Edition 2008-05-15
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2006 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions or
characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any
information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and
liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any
third party.
Information
For further information on technology, delivery terms and conditions and prices, please contact the nearest
Infineon Technologies Office (www.infineon.com/rfpower).
Warnings
Due to technical requirements, components may contain dangerous substances. For information on the types in
question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with the express written
approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of
that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices
or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect
human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
Data Sheet
11 of 11
Rev. 05, 2008-05-15