HYNIX HMP112P7EFR8C-C4

240pin Registered DDR2 SDRAM DIMMs based on 1Gb version E
This Hynix Registered Dual In-Line Memory Module (DIMM) series consists of 1Gb version E DDR2
SDRAMs in Fine Ball Grid Array (FBGA) packages on a 240pin glass-epoxy substrate. This Hynix 1Gb
version E based Registered DDR2 DIMM series provide a high performance 8 byte interface in 5.25" width
form factor of industry standard. It is suitable for easy interchange and addition.
FEATURES
JEDEC standard Double Data Rate2 Synchronous DRAMs (DDR2 SDRAMs) with 1.8V +/0.1V Power Supply
•
Fully differential clock operations (CK & CK)
•
•
All inputs and outputs are compatible with
SSTL_1.8 interface
Programmable Burst Length 4 / 8 with both
sequential and interleave mode
•
Auto refresh and self refresh supported
•
8 Bank architecture
•
8192 refresh cycles / 64ms
•
Posted CAS
•
Serial presence detect with EEPROM
•
Programmable CAS Latency 3, 4, 5, 6
•
DDR2 SDRAM Package: 60 ball(x4/x8)
•
OCD (Off-Chip Driver Impedance Adjustment)
•
133.35 x 30.00 mm form factor
•
ODT (On-Die Termination)
•
Halogen free & RoHS compliant
•
ORDERING INFORMATION
Part Name
Density Organization
# of
DRAMs
# of
ranks
Materials
Parity
Support
HMP112P7EFR8C-C4/Y5/S6/S5
1GB
128Mx72
9
1
Halogen Free
O
HMP125P7EFR4C-C4/Y5/S6/S5
2GB
256Mx72
18
1
Halogen Free
O
HMP151P7EFR4C-C4/Y5/S6/S5
4GB
512Mx72
36
2
Halogen Free
O
HMP31GP7EMR4C-C4/Y5
8GB
512Mx72
72
4
Halogen Free
O
This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any
responsibility for use of circuits described. No patent licenses are implied.
Rev. 0.2 / Sep. 2008
1
1240pin Registered DDR2 SDRAM DIMMs
SPEED GRADE & KEY PARAMETERS
C4
(DDR2-533)
Y5
(DDR2-667)
S6
(DDR2-800)
S5
(DDR2-800)
Unit
[email protected]
400
400
-
400
Mbps
[email protected]
533
533
533
533
Mbps
[email protected]
-
667
667
800
Mbps
[email protected]
-
-
800
-
Mbps
CL-tRCD-tRP
4-4-4
5-5-5
6-6-6
5-5-5
tCK
ADDRESS TABLE
Density Organization
Ranks
SDRAMs
# of
DRAMs
# of row/bank/column Address
Refresh
Method
1GB
128M x 72
1
128Mb x 8
9
14(A0~A13)/3(BA0~BA2)/10(A0~A9)
8K / 64ms
2GB
256M x 72
1
256Mb x 4
18
14(A0~A13)/3(BA0~BA2)/11(A0~A9,A11)
8K / 64ms
4GB
512M x 72
2
256Mb x 4
36
14(A0~A13)/3(BA0~BA2)/11(A0~A9,A11)
8K / 64ms
8GB
1G x 72
4
256Mb x 4
72
14(A0~A13)/3(BA0~BA2)/11(A0~A9,A11)
8K / 64ms
Rev. 0.2 / Sep. 2008
2
1240pin Registered DDR2 SDRAM DIMMs
Input/Output Functional Description
Symbol
Type
Polarity
Pin Description
CK0
IN
Positive
Edge
Positive line of the differential pair of system clock inputs that drives input to the on-DIMM PLL.
CK0
IN
Negative
Edge
Negative line of the differential pair of system clock inputs that drives input to the on-DIMM PLL.
CKE[1:0]
IN
Active High
Activates the DDR2 SDRAM CK signal when high and deactivates the CK signal when low. By deactivating the clocks, CKE low initiates the Power Down mode or the Self Refresh mode.
S[1:0]
IN
Active Low
Enables the associated DDR2 SDRAM command decoder when low and disables the command
decoder when high. When the command decoder is disabled, new commands are ignored but previous
operations continue. Rank 0 is selected by S0; Rank 1 is selected by S1
ODT[1:0]
IN
Active High
On-Die Termination signals.
RAS, CAS, WE
IN
Active Low
When sampled at the positive rising edge of the clock. RAS,CAS and WE(ALONG WITH S) define the
command being entered.
Vref
Supply
Reference voltage for SSTL18 inputs
VDDQ
Supply
Power supplies for the DDR2 SDRAM output buffers to provide improved noise immunity. For all current
DDR2 unbuffered DIMM designs, VDDQ shares the same power plane as VDD pins.
BA[2:0]
IN
-
Selects which DDR2 SDRAM internal bank of Eight is activated.
During a Bank Activate command cycle, Address input difines the row address(RA0~RA13)
A[9:0],A10/AP
A[13:11]
IN
-
DQ[63:0],
CB[7:0]
IN
-
DM[8:0]
IN
Active High
VDD,VSS
Supply
During a Read or Write command cycle, Address input defines the column address when sampled at the
cross point of the rising edge of CK and falling edge of CK. In addition to the column address, AP is used
to invoke autoprecharge operation at the end of the burst read or write cycle. If AP is high., autoprecharge is selected and BA0-BAn defines the bank to be precharged. If AP is low, autoprecharge is disabled. During a Precharge command cycle., AP is used in conjunction with BA0-BAn to control which
bank(s) to precharge. If AP is high, all banks will be precharged regardless of the state of BA0-BAn
inputs. If AP is low, then BA0-BAn are used to define which bank to precharge.
Data and Check Bit Input/Output pins.
DM is an input mask signal for write data. Input data is masked when DM is sampled High coincident with
that input data during a write access. DM is sampled on both edges of DQS. Although DM pins are input
only, the DM loading matches the DQ and DQS loading.
Power and ground for the DDR2 SDRAM input buffers, and core logic. VDD and VDDQ pins are tied to
VDD/VDDQ planes on these modules.
DQS[17:0]
I/O
Positive
Edge
Positive line of the differential data strobe for input and output data
DQS[17:0]
I/O
Negative
Edge
Negative line of the differential data strobe for input and output data
SA[2:0]
IN
-
These signals are tied at the system planar to either VSS or VDDSPD to configure the serial SPD
EEPROM address range.
SDA
I/O
-
This is a bidirectional pin used to transfer data into or out of the SPD EEPROM. A resister may be connected from the SDA bus line to VDDSPD on the system planar to act as a pull up.
SCL
IN
-
This signal is used to clock data into and out of the SPD EEPROM. A resistor may be connected from
SCL to VDDSPD to act as a pull up on the system board.
Supply
Power supply for SPD EEPROM. This supply is separate from the VDD/VDDQ power plane. EEPROM
supply is operable from 1.7V to 3.6V.
RESET
IN
The RESET pin is connected to the RST pin on the register and to the OE pin on the PLL. When low, all
register outputs will be driven low and the PLL clocks to the DRAMs and register(s) will be set to low
level (the PLL will remain synchronized with the input clock)
Par_In
IN
Parity bit for the Address and Control bus(“1”. Odd, “0”.Even)
Err_Out
OUT
VDDSPD
TEST
Rev. 0.2 / Sep. 2008
Parity error found in the Address and Control bus
Used by memory bus analysis tools (unused on memory DIMMs)
3
1240pin Registered DDR2 SDRAM DIMMs
PIN DESCRIPTION
Pin
Pin Description
Pin
Pin Description
CK0
Clock Input, positive line
ODT[1:0]
CK0
Clock input, negative line
VDDQ
DQs Power Supply
DQ0~DQ63
Data Input/Output
CKE0~CKE1
Clock Enable Input
On Die Termination Inputs
RAS
Row Address Strobe
CB0~CB7
Data check bits Input/Output
CAS
Column Address Strobe
DQS(0~8)
Data strobes
WE
Write Enable
DQS(0~8)
Data strobes, negative line
DM(0~8),DQS(9~17)
Data Maskes/Data strobes
DQS(9~17)
Data strobes, negative line
S0,S1
A0~A9,A11~A13
A10/AP
BA0, BA1, BA2
Chip Select Input
Address input
Address input/Autoprecharge
RFU
SDRAM Bank Address
NC
Reserved for Future Use
No Connect
SCL
Serial Presence Detect (SPD) Clock Input
TEST
Memory bus test tool (Not Connected and Not
Usable on DIMMs)
SDA
SPD Data Input/Output
VDD
Core Power
SA0~SA2
E2PROM Address Inputs
VDDQ
Par_In
Parity bit for the Address and Control bus
Err_Out
Parity error found on the Address
RESET
Reset Enable
CB0~CB7
VSS
VREF
VDDSPD
I/O Power Supply
Ground
Reference Power Supply
Power Supply for SPD
Data Strobe Inputs/Outputs
PIN LOCATION
pin #1
Pin #121
Rev. 0.2 / Sep. 2008
Front Side
Back Side
Pin #64
Pin #184
Pin #65
Pin #185
Pin #120
pin #240
4
1240pin Registered DDR2 SDRAM DIMMs
PIN ASSIGNMENT
Pin
Name
Pin
Name
Pin
Name
Pin
Name
Pin
Name
Pin
Name
1
VREF
41
VSS
81
DQ33
121
VSS
161
CB4
201
VSS
2
VSS
42
CB0
82
VSS
122
DQ4
162
CB5
202
DM4/DQS13
3
DQ0
43
CB1
83
DQS4
123
DQ5
163
VSS
203
DQS13
4
DQ1
44
VSS
84
DQS4
124
VSS
164
DM8,DQS17
204
VSS
5
VSS
45
DQS8
85
VSS
125
DM0/DQS9
165
DQS17
205
DQ38
6
DQS0
46
DQS8
86
DQ34
126
DQS9
166
VSS
206
DQ39
7
DQS0
47
VSS
87
DQ35
127
VSS
167
CB6
207
VSS
8
VSS
48
CB2
88
VSS
128
DQ6
168
CB7
208
DQ44
9
DQ2
49
CB3
89
DQ40
129
DQ7
169
VSS
209
DQ45
10
DQ3
50
VSS
90
DQ41
130
VSS
170
VDDQ
210
VSS
11
VSS
51
VDDQ
91
VSS
131
DQ12
171
NC,CKE1
211
DM5/DQS14
DQS14
12
DQ8
52
CKE0
92
DQS5
132
DQ13
172
VDD
212
13
DQ9
53
VDD
93
DQS5
133
VSS
173
A15,NC
213
VSS
14
VSS
54
BA2,NC
94
VSS
134
DM1/DQS10
174
A14,NC
214
DQ46
DQ47
15
DQS1
55
NC, Err_Out
95
DQ42
135
DQS10
175
VDDQ
215
16
DQS1
56
VDDQ
96
DQ43
136
VSS
176
A12
216
VSS
17
VSS
57
A11
97
VSS
137
RFU
177
A9
217
DQ52
18
RESET
58
A7
98
DQ48
138
RFU
178
VDD
218
DQ53
19
NC
59
VDD
99
DQ49
139
VSS
179
A8
219
VSS
20
VSS
60
A5
100
VSS
140
DQ14
180
A6
220
RFU
21
DQ10
61
A4
101
SA2
141
DQ15
181
VDDQ
221
RFU
22
DQ11
62
VDDQ
102
NC(TEST)
142
VSS
182
A3
222
VSS
23
VSS
63
A2
103
VSS
143
DQ20
183
A1
223
DM6/DQS15
24
DQ16
64
VDD
104
DQS6
144
DQ21
184
VDD
224
NC,DQS15
25
DQ17
105
DQS6
145
VSS
225
VSS
Key
Key
26
VSS
65
VSS
106
VSS
146
DM2/DQS11
185
CK0
226
DQ54
27
DQS2
66
VSS
107
DQ50
147
DQS11
186
CK0
227
DQ55
28
DQS2
67
VDD
108
DQ51
148
VSS
187
VDD
228
VSS
29
VSS
68
NC, Err_Out
109
VSS
149
DQ22
188
A0
229
DQ60
30
DQ18
69
VDD
110
DQ56
150
DQ23
189
VDD
230
DQ61
31
DQ19
70
A10/AP
111
DQ57
151
VSS
190
BA1
231
VSS
32
VSS
71
BA0
112
VSS
152
DQ28
191
VDDQ
232
DM7/DQS16
33
DQ24
72
VDDQ
113
DQS7
153
DQ29
192
RAS
233
NC,DQS16
34
DQ25
73
WE
114
DQS7
154
VSS
193
S0
234
VSS
35
VSS
74
CAS
115
VSS
155
DM3/DQS12
194
VDDQ
235
DQ62
DQ63
36
DQS3
75
VDDQ
116
DQ58
156
DQS12
195
ODT0
236
37
DQS3
76
NC, S1
117
DQ59
157
VSS
196
A13,NC
237
VSS
38
VSS
77
NC, ODT1
118
VSS
158
DQ30
197
VDD
238
VDDSPD
39
DQ26
78
VDDQ
119
SDA
159
DQ31
198
VSS
239
SA0
40
DQ27
79
VSS
120
SCL
160
VSS
199
DQ36
240
SA1
80
DQ32
200
DQ37
NC= No Connect, RFU= Reserved for Future Use.
Note:
1. RESET (Pin 18) is connected to both OE of PLL and Reset of register.
2. NC/Err_out (Pin 55) and NC/Par_In(Pin68) are for optional function to check address and command parity.
3. The Test pin (Pin 102) is reserved for bus analysis probes and is not connected on normal memory modules (DIMMs)
Rev. 0.2 / Sep. 2008
5
1240pin Registered DDR2 SDRAM DIMMs
FUNCTIONAL BLOCK DIAGRAM
1GB(128Mbx72): HMP112P7EFR8C
RS0
DQS0
DQS0
DM0/DQS9
DQS9
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
DQS4
DQS4
DM4/DQS13
DQS13
DM/ NU/
CS DQS DQS
RDQS RDQS
I/O 0
I/O 1
I/O 2
I/O 3
I/O 4
I/O 5
I/O 6
I/O 7
D0
DQS1
DQS1
DM1/DQS10
DQS10
DQ8
DQ9
DQ10
DQ11
DQ12
DQ13
DQ14
DQ15
DM/ NU/
CS DQS DQS
RDQS RDQS
I/O 0
I/O 1
I/O 2
I/O 3
I/O 4
I/O 5
I/O 6
I/O 7
D1
D4
Serial PD
SCL
DQ40
DQ41
DQ42
DQ43
DQ44
DQ45
DQ46
DQ47
DM/ NU/
CS DQS DQS
RDQS RDQS
I/O 0
I/O 1
I/O 2
I/O 3
I/O 4
I/O 5
I/O 6
I/O 7
D2
DQ48
DQ49
DQ50
DQ51
DQ52
DQ53
DQ54
DQ55
SDA
WP A0 A1 A2
SA0 SA1 SA2
DM/ NU/
CS DQS DQS
RDQS RDQS
I/O 0
I/O 1
I/O 2
I/O 3
I/O 4
I/O 5
I/O 6
I/O 7
D5
VDDSPD
SPD
VDD/VDDQ
D0–D8
VREF
D0–D8
VSS
D0–D8
Note:
1. DQ-to-I/O wiring may be changed within a nibble.
2. Unless otherwise noted, resistor values are 22 Ohms ± 5%.
DQS6
DQS6
DM6/DQS15
DQS15
DQS3
DQS3
DM3DQS12
DQS12
DQ24
DQ25
DQ26
DQ27
DQ28
DQ29
DQ30
DQ31
DM/ NU/
CS DQS DQS
RDQS RDQS
I/O 0
I/O 1
I/O 2
I/O 3
I/O 4
I/O 5
I/O 6
I/O 7
DQS5
DQS5
DM5/DQS14
DQS14
DQS2
DQS2
DM2/DQS11
DQS11
DQ16
DQ17
DQ18
DQ19
DQ20
DQ21
DQ22
DQ23
DQ32
DQ33
DQ33
DQ34
DQ35
DQ36
DQ37
DQ38
DM/ NU/
CS DQS DQS
RDQS RDQS
I/O 0
I/O 1
I/O 2
I/O 3
I/O 4
I/O 5
I/O 6
I/O 7
D6
DQS7
DQS7
DM7/DQS16
DQS16
DM/ NU/
CS DQS DQS
RDQS RDQS
I/O 0
I/O 1
I/O 2
I/O 3
I/O 4
I/O 5
I/O 6
I/O 7
D3
DQ56
DQ57
DQ58
DQ59
DQ60
DQ61
DQ62
DQ63
DM/ NU/
CS DQS DQS
RDQS RDQS
I/O 0
I/O 1
I/O 2
I/O 3
I/O 4
I/O 5
I/O 6
I/O 7
D7
DQS8
DQS8
DM8/DQS17
DQS17
CB0
CB1
CB2
CB3
CB4
CB5
CB6
CB7
S0*
BA0-BA2**
A0-A15**
RAS
CAS
WE
CKE0
ODT1
RESET
DM/ NU/
CS DQS DQS
RDQS RDQS
I/O 0
I/O 1
I/O 2
I/O 3
I/O 4
I/O 5
I/O 6
I/O 7
D8
1:2
R
E
G
I
S
T
R
E
The resistors on Par_In,A13,A14,A15,BA2 and the
signal line of Err_Out refer to the section:
“Register Options for Unused Address inputs”
RS0 -> CS: SDRAMs D0-D8
RBA-RBA2 -> BA0-BA2: SDRAMs D0-D8
RA0-RA15 -> A0-A15: SDRAMs D0-D8
RRAS -> RAS: SDRAMs D0-D8
RCAS -> CAS: SDRAMs D0-D8
RWE -> WE: SDRAMs D0-D8
RCKE0 -> CKE0: SDRAMs D0-D8
RODT0 -> ODT0: SDRAMs D0-D8
Signals for Address and Command Parity Function
Register
Vss
C0
VSS
C1
PAR_IN
PAR_IN
100KΩ
CK0
CK0
RESET
P
L
L
OE
PPO
QERR
Err_Out
PCK0-PCK6, PCK8, PCK9 -> CK: SDRAMs D0-D8
PCK0-PCK6, PCK8, PCK9 -> CK: SDRAMs D0-D8
PCK7 -> CK: Register
PCK7 -> CK: Register
RST
PCK7
PCK7
Rev. 0.2 / Sep. 2008
* S0 connects to DCS of VDD connects to CSR on the register. S1, CKE1 and ODT1 are NC.
** A13-15, BA2 have the optional pull down resistors (100K ohms), which is not indicated here.
6
1240pin Registered DDR2 SDRAM DIMMs
FUNCTIONAL BLOCK DIAGRAM
2GB(256Mbx72): HMP125P7EFR4C
VSS
RS0
DQS0
DQS0
DQS9
DQS9
DM CS DQS DQS
I/O 0
I/O 1
I/O 2
I/O 3
DQ0
DQ1
DQ2
DQ3
DQS1
DQS1
DQ4
DQ5
DQ6
DQ7
DQS9
DQS9
D0
DM CS DQS DQS
I/O 0
I/O 1
I/O 2
I/O 3
DQ8
DQ9
DQ10
DQ11
DQS2
DQS2
DM CS DQS DQS
I/O 0
I/O 1
I/O 2
I/O 3
DQ16
DQ17
DQ18
DQ19
DQS3
DQS3
DM CS DQS DQS
I/O 0
I/O 1
I/O 2
I/O 3
DQ24
DQ25
DQ26
DQ27
DQS4
DQS4
DM CS DQS DQS
I/O 0
I/O 1
I/O 2
I/O 3
DQ32
DQ33
DQ34
DQ35
DQS5
DQS5
DM CS DQS DQS
I/O 0
I/O 1
I/O 2
I/O 3
DQ40
DQ41
DQ42
DQ43
DQS6
DQS6
DM CS DQS DQS
I/O 0
I/O 1
I/O 2
I/O 3
DQ48
DQ49
DQ50
DQ51
DQS7
DQS7
DM CS DQS DQS
I/O 0
I/O 1
I/O 2
I/O 3
DQ56
DQ57
DQ58
DQ59
DQS8
DQS8
DM CS DQS DQS
I/O 0
I/O 1
I/O 2
I/O 3
CB0
CB1
CB2
CB3
S0*
BA0-BA2***
A0-A15***
RAS
CAS
WE
CKE0
ODT1
RESET**
1:2
R
E
G
I
S
T
R
E
D8
D0–D17
VREF
D0–D17
VSS
D0–D17
CK0
CK0
D11
RESET
P
L
L
OE
PCK0-PCK6, PCK8, PCK9 -> CK: SDRAMs D0-D17
PCK0-PCK6, PCK8, PCK9 -> CK: SDRAMs D0-D17
PCK7 -> CK: Register
PCK7 -> CK: Register
I/O 0
I/O 1
I/O 2
I/O 3
D12
Note:
1. DQ-to-I/O wiring may be changed within a nibble.
2. Unless otherwise noted, resistor values are 22 Ohms ± 5%.
I/O 0
I/O 1
I/O 2
I/O 3
D13
* S0 connects to DCS of Register A and CSR of Register B.
CSR of Register A and DCS of Register B connects to VDD.
I/O 0
I/O 1
I/O 2
I/O 3
D14
** RESET, PCK7 and PCK7 connects to both Registers. Other signals connect
to one of two Registers.
*** A13-15, BA2 have the optional pull down resistors (100K ohms), which is
not indicated here.
I/O 0
I/O 1
I/O 2
I/O 3
D15
DM CS DQS DQS
DQ60
DQ61
DQ62
DQ63
DQS17
DQS17
D7
SPD
DM CS DQS DQS
DQ52
DQ53
DQ54
DQ55
DQS16
DQS16
D6
I/O 0
I/O 1
I/O 2
I/O 3
DM CS DQS DQS
DQ44
DQ45
DQ46
DQ47
DQS15
DQS15
D5
D10
VDDSPD
VDD/VDDQ
DM CS DQS DQS
DQ36
DQ37
DQ38
DQ39
DQS14
DQS14
D4
SA0 SA1 SA2
DM CS DQS DQS
DQ28
DQ29
DQ30
DQ31
DQS13
DQS13
D3
I/O 0
I/O 1
I/O 2
I/O 3
SDA
WP A0 A1 A2
D9
DM CS DQS DQS
DQ20
DQ21
DQ22
DQ23
DQS12
DQS12
D2
I/O 0
I/O 1
I/O 2
I/O 3
SCL
DM CS DQS DQS
DQ12
DQ13
DQ14
DQ15
DQS11
DQS11
D1
Serial PD
DM CS DQS DQS
I/O 0
I/O 1
I/O 2
I/O 3
D16
DM CS DQS DQS
CB4
CB5
CB6
CB7
I/O 0
I/O 1
I/O 2
I/O 3
D17
RS0 -> CS: SDRAMs D0-D17
RBA-RBA2 -> BA0-BA2: SDRAMs D0-D17
RA0-RA15 -> A0-A15: SDRAMs D0-D17
RRAS -> RAS: SDRAMs D0-D17
RCAS -> CAS: SDRAMs D0-D17
RWE -> WE: SDRAMs D0-D17
RCKE0 -> CKE0: SDRAMs D0-D17
RODT0 -> ODT0: SDRAMs D0-D17
The resistors on Par_In,A13,A14,A15,BA2 and the signal line of Err_Out refer to
the section:
“Register Options for Unused Address inputs”
Signals for Address and Command Parity Function
Register A
Vss
C0
VDD
C1
PAR_IN
PAR_IN
100KΩ
PPO
QERR
Register B
VDD
C0
VDD
C1
PAR_IN
PPO
QERR
Err_Out
RST
PCK7**
PCK7**
Rev. 0.2 / Sep. 2008
7
1240pin Registered DDR2 SDRAM DIMMs
FUNCTIONAL BLOCK DIAGRAM
4GB(512Mbx72): HMP151P7EFR4C
VSS
RS0
RS1
DQS0
DQS0
DQS9
DQS9
DQ0
DQ1
DQ2
DQ3
DQS1
DQS1
DQ8
DQ9
DQ10
DQ11
DQS2
DQS2
DQ16
DQ17
DQ18
DQ19
DM CS DQS DQS
DM CS DQS DQS
I/O 0
I/O 1
I/O 2
I/O 3
I/O 0
I/O 1
I/O 2
I/O 3
D0
D18
DM CS DQS DQS
DM CS DQS DQS
I/O 0
I/O 1
I/O 2
I/O 3
I/O 0
I/O 1
I/O 2
I/O 3
D1
D19
DM CS DQS DQS
DM CS DQS DQS
I/O 0
I/O 1
I/O 2
I/O 3
I/O 0
I/O 1
I/O 2
I/O 3
D2
D20
DQS3
DQS3
DQ12
DQ13
DQ14
DQ15
DQS11
DQS11
DQ20
DQ21
DQ22
DQ23
DM CS DQS DQS
DM CS DQS DQS
I/O 0
I/O 1
I/O 2
I/O 3
I/O 0
I/O 1
I/O 2
I/O 3
D9
D27
Serial PD
SCL
SDA
WP A0 A1 A2
DM CS DQS DQS
DM CS DQS DQS
I/O 0
I/O 1
I/O 2
I/O 3
I/O 0
I/O 1
I/O 2
I/O 3
D10
SA0 SA1 SA2
D28
DM CS DQS DQS
DM CS DQS DQS
I/O 0
I/O 1
I/O 2
I/O 3
I/O 0
I/O 1
I/O 2
I/O 3
D11
D29
VDDSPD
SPD
VDD/VDDQ
D0–D35
VREF
D0–D35
VSS
D0–D35
DQS12
DQS12
DQ24
DQ25
DQ26
DQ27
DM CS DQS DQS
DM CS DQS DQS
I/O 0
I/O 1
I/O 2
I/O 3
I/O 0
I/O 1
I/O 2
I/O 3
D3
D21
DQS8
DQS8
DQ28
DQ29
DQ30
DQ30
DM CS DQS DQS
DM CS DQS DQS
I/O 0
I/O 1
I/O 2
I/O 3
I/O 0
I/O 1
I/O 2
I/O 3
D12
D30
DQS17
DQS17
CB0
CB1
CB2
CB3
DM CS DQS DQS
DM CS DQS DQS
I/O 0
I/O 1
I/O 2
I/O 3
I/O 0
I/O 1
I/O 2
I/O 3
D8
D26
CB4
CB5
CB6
CB7
DM CS DQS DQS
DM CS DQS DQS
I/O 0
I/O 1
I/O 2
I/O 3
I/O 0
I/O 1
I/O 2
I/O 3
D17
D35
Signals for Address and Command
Parity Function
Register
Par_In
RS0
RS1
DQS4
DQS4
PARIN
PTYERR
0Ω
Register
100KΩ
DQS13
DQS13
DQ32
DQ33
DQ34
DQ35
DQS5
DQS5
DQ40
DQ41
DQ42
DQ43
DQS6
DQS6
DQ48
DQ49
DQ50
DQ51
DM CS DQS DQS
DM CS DQS DQS
I/O 0
I/O 1
I/O 2
I/O 3
I/O 0
I/O 1
I/O 2
I/O 3
D4
D22
DM CS DQS DQS
DM CS DQS DQS
I/O 0
I/O 1
I/O 2
I/O 3
I/O 0
I/O 1
I/O 2
I/O 3
D5
D23
DM CS DQS DQS
DM CS DQS DQS
I/O 0
I/O 1
I/O 2
I/O 3
I/O 0
I/O 1
I/O 2
I/O 3
D6
D24
DQS7
DQS7
DQ36
DQ37
DQ38
DQ39
DQS14
DQS14
DQ44
DQ45
DQ46
DQ47
DQS15
DQS15
DQ52
DQ53
DQ54
DQ55
DM CS DQS DQS
DM CS DQS DQS
I/O 0
I/O 1
I/O 2
I/O 3
I/O 0
I/O 1
I/O 2
I/O 3
D13
D31
DM CS DQS DQS
DM CS DQS DQS
I/O 0
I/O 1
I/O 2
I/O 3
I/O 0
I/O 1
I/O 2
I/O 3
D14
D32
DM CS DQS DQS
DM CS DQS DQS
I/O 0
I/O 1
I/O 2
I/O 3
I/O 0
I/O 1
I/O 2
I/O 3
D15
PARIN
PTYERR
Err_Out
o ohm resistor on Err_Out is not populated
for non-parity card.
The resistors on Par_In,A13,A14,A15,BA2
and the signal line of Err_Out refer to the
section:
“Register Options for Unused Address
input”
D33
DQS16
DQS16
DQ56
DQ57
DQ58
DQ59
DM CS DQS DQS
DM CS DQS DQS
I/O 0
I/O 1
I/O 2
I/O 3
I/O 0
I/O 1
I/O 2
I/O 3
S0*
D7
D25
DQ60
DQ61
DQ62
DQ63
DM CS DQS DQS
DM CS DQS DQS
I/O 0
I/O 1
I/O 2
I/O 3
I/O 0
I/O 1
I/O 2
I/O 3
D16
D34
RS0 -> CS: SDRAMs D0-D17
S1*
BA0-BA2***
A0-A15***
RAS
1:2
R
E
G
I
S
T
CAS
WE
CKE0
CKE1
ODT0
ODT1
RESET**
DQ4
DQ5
DQ6
DQ7
DQS10
DQS10
E
R
RST
PCK7**
PCK7**
RS1 -> CS: SDRAMs D18-D35
RBA0-RBA2 -> BA0-BA2: SDRAMs D0-D35
RA0-RA15 -> A0-A15: SDRAMs D0-D35
RRAS -> RAS: SDRAMs D0-D35
CK0
CK0
RESET
P
L
L
OE
PCK0-PCK6, PCK8, PCK9 -> CK: SDRAMs D0-D35
PCK0-PCK6, PCK8, PCK9 -> CK: SDRAMs D0-D35
PCK7 -> CK: Register
PCK7 -> CK: Register
RCAS -> CAS: SDRAMs D0-D35
RWE -> WE: SDRAMs D0-D35
RCKE0 -> CKE0-1: SDRAMs D0-D17
RCKE1 -> CKE0-1: SDRAMs D18-D35
RODT0 -> ODT1: SDRAMs D0-D17
RODT1 -> ODT1: SDRAMs D18-D35
Note:
1. DQ-to-I/O wiring may be changed within a nibble.
2. Unless otherwise noted, resistor values are 22 Ohms ± 5%.
3. RS0 and RS1 alternate between the bottom and surface sides of the DIMM.
*S0 connects to DCS and S1 command to CRS on a pair of Register, S2 connects to DCS and S0 connect to CRS on another pair of Register.
** RESET, PCK7 and PCK7 connect to all Registers. Other signals connect to one pair of four Registers.
*** A14-15, BA2 have the optional pull down resistors (100K ohms), which is not indicated here.
Rev. 0.2 / Sep. 2008
8
1240pin Registered DDR2 SDRAM DIMMs
FUNCTIONAL BLOCK DIAGRAM
8GB(1Gbx72): HMP31GP7EFR4C
RODT1
RCKE1
RS3
RS2
RODT0
RCKE0
RS1
RS0
RODT1
RCKE1
RS3
RS2
RODT0
RCKE0
RS1
RS0
DQS
DQS
DQ3~0
DM
D12
D17
D23
D24
D25
WE
CKE0
CKE1
ODT1
ODT0
RESET
CS0
CS1
CKE0
CKE1
ODT0
ODT1
DQS
DQS
DQ3~0
DM
D0
D30
DQS
DQS
DQ3~0
DM
D35
DQS
DQS
DQ3~0
DM
D31
DQS
DQS
DQ3~0
DM
D32
DQS
DQS
DQ3~0
DM
D33
DQS
DQS
DQ3~0
DM
D34
CS0
CS1
CKE0
CKE1
ODT0
ODT1
CS0
CS1
CKE0
CKE1
ODT0
ODT1
CS0
CS1
CKE0
CKE1
ODT0
ODT1
D29
DQS14
DQS14
DQ47~44
DQS
DQS
DQ3~0
DM
DQS15
DQS15
DQ55~52
DQS
DQS
DQ3~0
DM
DQS16
DQS16
DQ63~60
DQS
DQS
DQ3~0
DM
D13
D14
D15
D16
CS0
CS1
CKE0
CKE1
ODT0
ODT1
DQS
DQS
DQ3~0
DM
Register
1:2
R
E
G
I
S
T
CAS
DQS
DQS
DQ3~0
DM
CS0
CS1
CKE0
CKE1
ODT0
ODT1
DQS13
DQS13
DQ39~36
RS0 -> CS0: SDRAMs D0-D17, RS2 -> CS0: SDRAMs D18-D35
RAS
D28
RODT1
RCKE1
RS3
RS2
22Ω
S0,2*
S1,3**
BA0-BA2***
A0-A15***
DQS
DQS
DQ3~0
DM
CS0
CS1
CKE0
CKE1
ODT0
ODT1
CS0
CS1
CKE0
CKE1
ODT0
ODT1
CS0
CS1
CKE0
CKE1
ODT0
ODT1
DQS
DQS
DQ3~0
DM
CS0
CS1
CKE0
CKE1
ODT0
ODT1
DQS17
DQS17
CB7~4
CS0
CS1
CKE0
CKE1
ODT0
ODT1
DQS
DQS
DQ3~0
DM
CS0
CS1
CKE0
CKE1
ODT0
ODT1
CS0
CS1
CKE0
CKE1
ODT0
ODT1
CS0
CS1
CKE0
CKE1
ODT0
ODT1
D7
DQS12
DQS12
DQ31~28
D11
D27
CS0
CS1
CKE0
CKE1
ODT0
ODT1
DQS
DQS
DQ3~0
DM
DQS
DQS
DQ3~0
DM
DQS
DQS
DQ3~0
DM
CS0
CS1
CKE0
CKE1
ODT0
ODT1
DQS7
DQS7
DQ59~56
D6
DQS
DQS
DQ3~0
DM
CS0
CS1
CKE0
CKE1
ODT0
ODT1
DQS
DQS
DQ3~0
DM
DQS
DQS
DQ3~0
DM
D22
CS0
CS1
CKE0
CKE1
ODT0
ODT1
DQS
DQS6
DQ51~48
D5
DQS
DQS
DQ3~0
DM
CS0
CS1
CKE0
CKE1
ODT0
ODT1
DQS
DQS
DQ3~0
DM
CS0
CS1
CKE0
CKE1
ODT0
ODT1
DQS5
DQS5
DQ43~40
D4
CS0
CS1
CKE0
CKE1
ODT0
ODT1
22Ω
CS0
CS1
CKE0
CKE1
ODT0
ODT1
DQS
DQS
DQ3~0
DM
DQS11
DQS11
DQ23~20
D10
RODT0
RCKE0
RS1
RS0
RODT1
RCKE1
RS3
RS2
DQS4
DQS4
DQ35~32
DQS
DQS
DQ3~0
DM
CS0
CS1
CKE0
CKE1
ODT0
ODT1
RODT0
RCKE0
RS1
RS0
D26
DQS10
DQS10
DQ15~12
D9
CS0
CS1
CKE0
CKE1
ODT0
ODT1
D8
D21
DQS
DQS
DQ3~0
DM
CS0
CS1
CKE0
CKE1
ODT0
ODT1
DQS
DQS
DQ3~0
DM
D20
DQS9
DQS9
DQ7~4
CS0
CS1
CKE0
CKE1
ODT0
ODT1
D3
CS0
CS1
CKE0
CKE1
ODT0
ODT1
DQS
DQS
DQ3~0
DM
DQS
DQS
DQ3~0
DM
CS0
CS1
CKE0
CKE1
ODT0
ODT1
DQS8
DQS8
CB3~0
D2
CS0
CS1
CKE0
CKE1
ODT0
ODT1
DQS
DQS
DQ3~0
DM
DQS
DQS
DQ3~0
DM
D19
CS0
CS1
CKE0
CKE1
ODT0
ODT1
DQS3
DQS3
DQ27~24
D1
D18
CS0
CS1
CKE0
CKE1
ODT0
ODT1
DQS
DQS
DQ3~0
DM
CS0
CS1
CKE0
CKE1
ODT0
ODT1
DQS2
DQS2
DQ19~26
DQS
DQS
DQ3~0
DM
CS0
CS1
CKE0
CKE1
ODT0
ODT1
DQS
DQS
DQ3~0
DM
D0
CS0
CS1
CKE0
CKE1
ODT0
ODT1
DQS1
DQS1
DQ11~8
DQS
DQS
DQ3~0
DM
CS0
CS1
CKE0
CKE1
ODT0
ODT1
DQS
DQS
DQ3~0
DM
CS0
CS1
CKE0
CKE1
ODT0
ODT1
22Ω
DQS0
DQS0
DQ3~0
E
R
RST
PCK7
PCK7
0Ω
RS1 -> CS1: SDRAMs D0-D17, RS3 -> CS1: SDRAMs D18-D35
RBA-RBA2 -> BA0-BA1: SDRAMs D0-D35
RA0-RA13 -> A0-A13: SDRAMs D0-D35
PAR_IN
100KΩ
PTYERR
0Ω
Register
PARIN
ERR_OUT
PTYERR
Serial PD
SCL
RRAS -> RAS: SDRAMs D0-D35
SDA
WP A0 A1 A2
RCAS -> CAS: SDRAMs D0-D35
RWE -> WE: SDRAMs D0-D35
RCKE0 -> CKE0-1: SDRAMs D0-D17
RCKE1 -> CKE0-1: SDRAMs D18-D35
RODT0 -> ODT1: SDRAMs D0-D17
RODT1 -> ODT1: SDRAMs D18-D35
PARIN
CK0
CK0
RESET
P
L
L
OE
SA0 SA1 SA2
PCK7 -> CK: Register
PCK7 -> CK: Register
PCK0-PCK6, PCK8, PCK9 -> CK: SDRAMs D0-D35
PCK0-PCK6, PCK8, PCK9 -> CK: SDRAMs D0-D35
*S0 connects to DCS0, S1 to DCS1 on the first register, S2 connects to DCS0, S3 to DCS1 on the second register.
** S2 and S3 have required pull up resistors (100K ohms), not indicated here.
*** A13-15, BA2 have optional pull down resistors (100K ohms), not indicated here.
Rev. 0.2 / Sep. 2008
9
1240pin Registered DDR2 SDRAM DIMMs
ABSOLUTE MAXIMUM DC RATINGS
Parameter
Symbol
Value
Unit
Note
Voltage on VDD pin relative to Vss
VDD
- 1.0 ~ 2.3
V
1
Voltage on VDDQ pin relative to Vss
VDDQ
- 0.5 ~ 2.3
V
1
Voltage on VDDL pin relative to Vss
VDDL
- 0.5 ~ 2.3
V
1
Voltage on any pin relative to Vss
VIN, VOUT
- 0.5 ~ 2.3
V
1
Operating Conditions and Environmental Parameters
Parameter
Symbol
Rating
Units
Notes
DIMM Operating temperature (ambient)
TOPR
0 ~ +55
o
C
Storage Temperature
TSTG
-50 ~ +100
o
C
1
Storage Humidity (without condensation)
HSTG
5 to 95
%
1
DIMM Barometric Pressure (operating & storage)
PBAR
105 to 69
K Pascal
2
DRAM Component Case Temperature Range
TCASE
0 ~+95
oC
3
Note:
1. Stress greater than those listed may cause permanent damage to the device. This is a stress rating only, and device
functional operation at or above the conditions indicated is not implied. Expousure to absolute maximum rating con
ditions for extended periods may affect reliablility.
2. Up to 9850 ft.
3. If the DRAM case temperature is Above 85oC, the Auto-Refresh command interval has to be reduced to
tREFI=3.9us. For Measurement conditions of TCASE, please refer to the JEDEC document JESD51-2.
DC OPERATING CONDITIONS
Symbol
Parameter
(SSTL_1.8)
Rating
Min.
Typ.
Max.
Units
Notes
VDD
Supply Voltage
1.7
1.8
1.9
V
1
VDDL
Supply Voltage for DLL
1.7
1.8
1.9
V
1,2
VDDQ
Supply Voltage for Output
1.7
1.8
1.9
V
1,2
VREF
Input Reference Voltage
0.49*VDDQ
0.50*VDDQ
0.51*VDDQ
mV
3,4
VTT
Termination Voltage
VREF-0.04
VREF
VREF+0.04
V
5
1.7
-
3.6
V
VDDSPD
EEPROM Supply Voltage
Note:
1. Min. Typ. and Max. values increase by 100mV for C3(DDR2-533 3-3-3) speed option.
2. VDDQ tracks with VDD,VDDL tracks with VDD. AC parameters are measured with VDD,VDDQ and VDD.
3. The value of VREF may be selected by the user to provide optimum noise margin in the system. Typically the value of VREF is
expected to be about 0.5 x VDDQ of the transmitting device and VREF is expected to track variations in VDDQ.
4. Peak to peak ac noise on VREF may not exceed +/-2% VREF (dc).
5. VTT of transmitting device must track VREF of receiving device.
Rev. 0.2 / Sep. 2008
10
1240pin Registered DDR2 SDRAM DIMMs
INPUT DC LOGIC LEVEL
Parameter
Symbol
Min
Max
Unit
dc Input logic HIGH
VIH(DC)
VREF + 0.125
VDDQ + 0.3
V
dc Input logic LOW
VIL(DC)
-0.30
VREF - 0.125
V
Note
INPUT AC LOGIC LEVEL
Parameter
DDR2 400/533
Symbol
Min
DDR2 667/800
Max
Min
Max
Unit
Notes
ac Input logic HIGH
VIH(AC)
VREF + 0.250
-
VREF + 0.200
-
V
ac Input logic LOW
VIL(AC)
-
VREF - 0.250
-
VREF - 0.200
V
Value
Units
Notes
0.5 * VDDQ
V
1
AC INPUT TEST CONDITIONS
Symbol
Condition
VREF
Input reference voltage
VSWING(MAX)
Input signal maximum peak to peak swing
1.0
V
1
SLEW
Input signal minimum slew rate
1.0
V/ns
2, 3
Note:
1.
2.
Input waveform timing is referenced to the input signal crossing through the VREF level applied to the device under test.
The input signal minimum slew rate is to be maintained over the range from VREF max to VIH(ac) min for rising edges and the
range from VREF min to VIL(ac) max for falling edges as shown in the below figure.
3.
AC timings are referenced with input waveforms switching from VIL (ac) to VIH (ac) on the positive transitions and VIH (ac) to
VIL (ac) on the negative transitions.
Start of Falling Edge Input Timing
Start of Rising Edge Input Timing
VSWING(MAX)
∆TR
∆TF
Falling Slew =
VREF - VIL(ac) max
∆TF
Rising Slew =
VDDQ
VIH(ac) min
VIH(dc) min
VREF
VIL(dc) max
VIL(ac) max
VSS
VIH(ac) min - VREF
∆TR
< Figure: AC Input Test Signal Waveform >
Rev. 0.2 / Sep. 2008
11
1240pin Registered DDR2 SDRAM DIMMs
Differential Input AC logic Level
Symbol
Parameter
VID (ac)
ac differential input voltage
VIX (ac)
ac differential cross point voltage
Min.
Max.
Units
Note
0.5
VDDQ + 0.6
V
1
0.5 * VDDQ - 0.175
0.5 * VDDQ + 0.175
V
2
Note:
1. VIN(DC) specifies the allowable DC execution of each input of differential pair such as CK, CK, DQS, DQS, LDQS,
LDQS, UDQS and UDQS.
2. VID(DC) specifies the input differential voltage |VTR -VCP | required for switching, where VTR is the true input (such as CK, DQS, LDQS
or UDQS) level and VCP is the complementary input (such as CK, DQS, LDQS or UDQS) level. The minimum value is equal to
VIH(DC) - VIL(DC).
VDDQ
VTR
Crossing point
VID
VIX or VOX
VCP
VSSQ
< Differential signal levels >
Note:
1. VID(AC) specifies the input differential voltage |VTR -VCP | required for switching, where VTR is the true input signal
(such as CK, DQS, LDQS or UDQS) and VCP is the complementary input signal (such as CK, DQS, LDQS or UDQS).
The minimum value is equal to V IH(AC) - VIL(AC).
2. The typical value of VIX(AC) is expected to be about 0.5 * VDDQ of the transmitting device and VIX(AC) is expected to track variations in
VDDQ. VIX(AC) indicates the voltage at which differential input signals must cross.
DIFFERENTIAL AC OUTPUT PARAMETERS
Symbol
VOX (ac)
Parameter
ac differential crosspoint voltage
Min.
Max.
Units
Note
0.5 * VDDQ - 0.125
0.5 * VDDQ + 0.125
V
1
Note:
1. The typical value of VOX(AC) is expected to be about 0.5 * VDDQ of the transmitting device and VOX(AC) is expected to track variations
in VDDQ. VOX(AC) indicates the voltage at which differential output signals must cross.
Rev. 0.2 / Sep. 2008
12
1240pin Registered DDR2 SDRAM DIMMs
OUTPUT BUFFER LEVELS
OUTPUT AC TEST CONDITIONS
Symbol
VOTR
Parameter
Output Timing Measurement Reference Level
SSTL_18
Units
Notes
0.5 * VDDQ
V
1
Note:
1. The VDDQ of the device under test is referenced.
OUTPUT DC CURRENT DRIVE
Symbol
Parameter
IOH(dc)
Output Minimum Source DC Current
IOL(dc)
Output Minimum Sink DC Current
SSTl_18
Units
Notes
- 13.4
mA
1, 3, 4
13.4
mA
2, 3, 4
Note:
1.VDDQ = 1.7 V; VOUT = 1420 mV. (VOUT - VDDQ)/IOH must be less than 21 ohm for values of VOUT between VDDQ and VDDQ - 280 mV.
2. VDDQ = 1.7 V; VOUT = 280 mV. VOUT/IOL must be less than 21 ohm for values of VOUT between 0 V and 280 mV.
3. The dc value of VREF applied to the receiving device is set to VTT
4. The values of IOH(dc) and IOL(dc) are based on the conditions given in Notes 1 and 2. They are used to test device drive current capability to ensure VIH min plus a noise margin and VIL max minus a noise margin are delivered to an SSTL_18 receiver. The actual current values are derived by shifting the desired driver operating point along a 21 ohm load line to define a convenient driver current for
measurement.
Rev. 0.2 / Sep. 2008
13
1240pin Registered DDR2 SDRAM DIMMs
PIN Capacitance (VDD=1.8V,VDDQ=1.8V, TA=25°C)
1GB: HMP112P7EFR8C
Pin
CK0, /CK0
CKE, ODT
/CS
Address, /RAS, /CAS, /WE
DQ, DM, DQS, /DQS
Symbol
Min
Max
Unit
CCK
CI1
CI2
CI3
CIO
7
8
8
8
6
11
12
12
12
9
pF
pF
pF
pF
pF
Symbol
Min
Max
Unit
CCK
CI1
CI2
CI3
CIO
7
8
10
8
6
11
12
15
12
9
pF
pF
pF
pF
pF
Symbol
Min
Max
Unit
CCK
CI1
CI2
CI3
CIO
7
10
10
10
9
11
15
15
15
15
pF
pF
pF
pF
pF
Symbol
Min
Max
Unit
CCK
CI1
CI2
CI3
CIO
7
8
8
10
18
11
12
12
15
22
pF
pF
pF
pF
pF
2GB: HMP125P7EFR4C
Pin
CK0, /CK0
CKE, ODT
/CS
Address, /RAS, /CAS, /WE
DQ, DM, DQS, /DQS
4GB: HMP151P7EFR4C
Pin
CK0, /CK0
CKE, ODT
/CS
Address, /RAS, /CAS, /WE
DQ, DM, DQS, /DQS
8GB: HMP31GP7EMR4C
Pin
CK0, /CK0
CKE, ODT
/CS
Address, /RAS, /CAS, /WE
DQ, DM, DQS, /DQS
Note:
1. Pins not under test are tied to GND.
2. These value are guaranteed by design and tested on a sample basis only.
Rev. 0.2 / Sep. 2008
14
1240pin Registered DDR2 SDRAM DIMMs
IDD SPECIFICATIONS (TCASE: 0 to 95oC)
1GB, 128M x 72 Registered DIMM: HMP112P7EFR8C
Symbol
C4
(DDR2 [email protected])
Y5
(DDR2 [email protected])
S5 /S6
(DDR2 [email protected]&6)
Unit
IDD0
1235
1280
1325
mA
IDD1
1325
1370
1415
mA
IDD2P
740
740
740
mA
IDD2Q
893
920
938
mA
IDD2N
965
1010
1055
mA
IDD3P(F)
875
875
875
mA
IDD3P(S)
758
758
758
mA
IDD3N
1055
1100
1145
mA
IDD4R
1730
1910
2090
mA
IDD4W
1730
1955
2180
mA
IDD5B
2090
2135
2180
mA
IDD6
540
540
540
mA
IDD7
2225
2405
2720
mA
Note
1
2GB, 256M x 72 Registered DIMM: HMP125P7EFR4C
Symbol
C4
(DDR2 [email protected])
Y5
(DDR2 [email protected])
S5 /S6
(DDR2 [email protected]&6)
Unit
IDD0
1820
1910
2000
mA
IDD1
2000
2090
2180
mA
IDD2P
830
830
830
mA
IDD2Q
1136
1190
1226
mA
IDD2N
1280
1370
1460
mA
IDD3P(F)
1100
1100
1100
mA
IDD3P(S)
866
866
866
mA
IDD3N
1460
1550
1640
mA
IDD4R
2810
3170
3530
mA
IDD4W
2810
3260
3710
mA
IDD5B
3330
3420
3510
mA
IDD6
630
630
630
mA
IDD7
3800
4160
4790
mA
Rev. 0.2 / Sep. 2008
Note
1
15
1240pin Registered DDR2 SDRAM DIMMs
4GB, 512M x 72 Registered DIMM: HMP151P7EFR4C
Symbol
C4
(DDR2 [email protected])
Y5
(DDR2 [email protected])
S5 /S6
(DDR2 [email protected]&6)
Unit
IDD0
2450
2630
2810
mA
IDD1
2630
2810
2990
mA
IDD2P
1010
1010
1010
mA
IDD2Q
1622
1730
1802
mA
IDD2N
1910
2090
2270
mA
IDD3P(F)
1550
1550
1550
mA
IDD3P(S)
1082
1082
1082
mA
IDD3N
2270
2450
2630
mA
IDD4R
3440
3890
4340
mA
IDD4W
3440
3980
4520
mA
IDD5B
3960
4140
4320
mA
IDD6
810
810
810
mA
IDD7
4430
4880
5600
mA
Note
1
8GB, 1G x 72 Registered DIMM: HMP31GP7EMR4C
Symbol
C4
(DDR2 [email protected])
Y5
(DDR2 [email protected])
Unit
IDD0
3710
4070
mA
IDD1
3890
4250
mA
IDD2P
690
690
mA
IDD2Q
758
770
mA
IDD2N
790
810
mA
IDD3P(F)
750
750
mA
IDD3P(S)
698
698
mA
IDD3N
830
850
mA
IDD4R
4700
5330
mA
IDD4W
4700
5420
mA
IDD5B
5220
5580
mA
IDD6
490
490
mA
IDD7
5690
6320
mA
Note
Note: 1. IDD6 current values are guaranteed up to Tcase of 85°C max.
Rev. 0.2 / Sep. 2008
16
1240pin Registered DDR2 SDRAM DIMMs
IDD Measurement Conditions
Symbol
Conditions
Units
IDD0
Operating one bank active-precharge current; tCK = tCK(IDD), tRC = tRC(IDD), tRAS = tRASmin
(IDD);CKE is HIGH, CS is HIGH between valid commands; Address bus inputs are SWITCHING; Data bus
inputs are SWITCHING
mA
IDD1
Operating one bank active-read-precharge current; IOUT = 0mA;BL = 4, CL = CL(IDD), AL = 0;
tCK = tCK(IDD), tRC = tRC (IDD), tRAS = tRASmin (IDD), tRCD = tRCD(IDD); CKE is HIGH, CS is HIGH
between valid commands; Address bus inputs are SWITCHING; Data pattern is same as IDD4W
mA
IDD2P
Precharge power-down current; All banks idle; tCK = tCK(IDD); CKE is LOW; Other control and address
bus inputs are STABLE; Data bus inputs are FLOATING
mA
IDD2Q
Precharge quiet standby current; All banks idle; tCK = tCK(IDD);CKE is HIGH, CS is HIGH; Other control
and address bus inputs are STABLE; Data bus inputs are FLOATING
mA
IDD2N
Precharge standby current; All banks idle; tCK = tCK(IDD); CKE is HIGH, CS is HIGH; Other control and
address bus inputs are SWITCHING; Data bus inputs are SWITCHING
mA
IDD3P
Active power-down current; All banks open; tCK = tCK(IDD); CKE is LOW;
Other control and address bus inputs are STABLE; Data bus inputs are
FLOATING
Fast PDN Exit MRS(12) = 0
mA
Slow PDN Exit MRS(12) = 1
mA
IDD3N
Active standby current; All banks open; tCK = tCK(IDD), tRAS = tRASmax (IDD), tRP =tRP(IDD); CKE is
HIGH, CS is HIGH between valid commands; Other control and address bus inputs are SWITCHING; Data
bus inputs are SWITCHING
mA
IDD4W
Operating burst write current; All banks open, Continuous burst writes; BL = 4, CL = CL(IDD), AL = 0; tCK =
tCK(IDD), tRAS = tRASmax (IDD), tRP = tRP(IDD); CKE is HIGH, CS is HIGH between valid commands;
Address bus inputs are SWITCHING; Data bus inputs are SWITCHING
mA
IDD4R
Operating burst read current; All banks open, Continuous burst reads, IOUT = 0mA; BL = 4, CL = CL(IDD),
AL = 0; tCK = tCK(IDD), tRAS = tRASmax (IDD), tRP = tRP(IDD); CKE is HIGH, CS is HIGH between valid
commands; Address bus inputs are SWITCHING; Data pattern is same as IDD4W
mA
IDD5B
Burst refresh current; tCK = tCK(IDD); Refresh command at every tRFC(IDD) interval; CKE is HIGH, CS is
HIGH between valid commands; Other control and address bus inputs are SWITCHING; Data bus inputs are
SWITCHING
mA
IDD6
Self refresh current; CK and CK at 0V; CKE ≤ 0.2V; Other control and address bus inputs are FLOATING;
Data bus inputs are FLOATING. IDD6 current values are guaranted up to Tcase of 85℃ max.
mA
IDD7
Operating bank interleave read current; All bank interleaving reads, IOUT = 0mA; BL = 4, CL = CL(IDD), AL
= tRCD(IDD)-1*tCK(IDD); tCK = tCK(IDD), tRC = tRC(IDD), tRRD = tRRD(IDD), tRCD = 1*tCK(IDD); CKE is
HIGH, CS is HIGH between valid commands; Address bus inputs are STABLE during DESELECTs; Data pattern is same as IDD4R; - Refer to the following page for detailed timing conditions
mA
Note:
1. IDD specifications are tested after the device is properly initialized
2. Input slew rate is specified by AC Parametric Test Condition
3. IDD parameters are specified with ODT disabled.
4. Data bus consists of DQ, DM, DQS, DQS, RDQS, RDQS, LDQS, LDQS, UDQS, and UDQS. IDD values must be met with all combinations
of EMRS bits 10 and 11.
5. Definitions for IDD
LOW is defined as Vin ≤ VILAC (max)
HIGH is defined as Vin ≥ VIHAC (min)
STABLE is defined as inputs stable at a HIGH or LOW level
FLOATING is defined as inputs at VREF = VDDQ/2
SWITCHING is defined as: inputs changing between HIGH and LOW every other clock cycle (once per two clocks) for address and control signals, and inputs changing between HIGH and LOW every other data transfer (once per clock) for DQ signals not including
masks or strobes
Rev. 0.2 / Sep. 2008
17
1240pin Registered DDR2 SDRAM DIMMs
Electrical Characteristics & AC Timings
Speed Bins and CL, tRCD, tRP, tRC and tRAS for Corresponding Bin
Speed
DDR2-800 (S5)
DDR2-667 (Y5)
DDR2-533 (C4)
Unit
Bin (CL-tRCD-tRP)
5-5-5
5-5-5
4-4-4
Parameter
min
min
min
CAS Latency
5
5
4
ns
tRCD
12.5
15
15
ns
tRP
12.5
15
15
ns
tRC
57.5
60
60
ns
tRAS
45
45
45
ns
AC Timing Parameters by Speed Grade (DDR2-400 & DDR2-533)
DDR2-400
Parameter
DDR2-533
Symbol
Unit Note
Min
Max
Min
Max
Data-Out edge to Clock edge Skew
tAC
-600
600
-500
500
ps
DQS-Out edge to Clock edge Skew
tDQSCK
-500
500
-500
450
ns
Clock High Level Width
tCH
0.45
0.55
0.45
0.55
CK
Clock Low Level Width
tCL
0.45
0.55
0.45
0.55
CK
Clock Half Period
tHP
min
(tCL, tCH)
-
min
(tCL, tCH)
-
ns
System Clock Cycle Time
tCK
5000
8000
3750
8000
ps
DQ and DM input setup time
tDS
150
-
100
-
ps
1
DQ and DM input hold time
tDH
275
-
225
-
ps
1
Control & Address input Pulse Width for each input
tIPW
0.6
-
0.6
-
tCK
tDIPW
0.35
-
0.35
-
tCK
tHZ
-
tAC max
-
tAC max
ps
tLZ(DQS)
tAC min
tAC max
tAC min
tAC max
ps
DQ low-impedance time from CK/CK
tLZ(DQ)
2*tAC min
tAC max
2*tAC min
tAC max
ps
DQS-DQ skew for DQS and associated DQ signals
tDQSQ
-
350
-
300
ps
tQHS
-
450
-
400
ps
tQH
tHP - tQHS
-
tHP - tQHS
-
ps
Write command to first DQS latching transition
tDQSS
WL - 0.25
WL + 0.25
WL - 0.25
WL + 0.25
tCK
DQS input high pulse width
tDQSH
0.35
-
0.35
-
tCK
DQS input low pulse width
tDQSL
0.35
-
0.35
-
tCK
DQS falling edge to CK setup time
tDSS
0.2
-
0.2
-
tCK
DQS falling edge hold time from CK
tDSH
0.2
-
0.2
-
tCK
tMRD
2
-
2
-
tCK
tWPRE
0.35
-
0.35
-
tCK
DQ and DM input pulse width for each input pulse width for
each input
Data-out high-impedance window from CK, /CK
DQS low-impedance time from CK/CK
DQ hold skew factor
DQ/DQS output hold time from DQS
Mode register set command cycle time
Write preamble
Rev. 0.2 / Sep. 2008
18
1240pin Registered DDR2 SDRAM DIMMs
DDR2-400
Parameter
Write postamble
Address and control input setup time
Address and control input hold time
DDR2-533
Symbol
Unit Note
Min
Max
Min
Max
tWPST
0.4
tIS
350
0.6
0.4
0.6
tCK
-
250
-
ps
tIH
475
-
375
-
ps
Read preamble
tRPRE
0.9
1.1
0.9
1.1
tCK
Read postamble
tRPST
0.4
0.6
0.4
0.6
tCK
Auto-Refresh to Active/Auto-Refresh command period
tRFC
127.5
-
127.5
-
ns
Row Active to Row Active Delay for 1KB page size
tRRD
7.5
-
7.5
-
ns
Row Active to Row Active Delay for 2KB page size
tRRD
10
-
10
-
ns
Four Activate Window for 1KB page size
tFAW
37.5
-
37.5
-
ns
Four Activate Window for 2KB page size
tFAW
50
-
50
-
ns
CAS to CAS command delay
tCCD
2
Write recovery time
tWR
15
-
15
-
ns
Auto Precharge Write Recovery + Precharge Time
tDAL
tWR + tRP
-
tWR + tRP
-
tCK
Write to Read Command Delay
tWTR
10
-
7.5
-
ns
Internal read to precharge command delay
tRTP
7.5
Exit self refresh to a non-read command
tXSNR
tRFC + 10
Exit self refresh to a read command
tXSRD
200
-
200
-
tCK
-
2
-
tCK
Exit precharge power down to any non-read command
2
tCK
7.5
ns
tRFC + 10
ns
tXP
2
Exit active power down to read command
tXARD
2
2
tCK
Exit active power down to read command
(Slow exit, Lower power)
tXARDS
6 - AL
6 - AL
tCK
tCKE
3
3
tCK
CKE minimum pulse width
(high and low pulse width)
ODT turn-on delay
tAOND
2
2
2
2
tCK
tAON
tAC (min)
tAC(max)+1
tAC (min)
tAC(max)+1
ns
tAONPD
tAC(min)+2
2tCK+tAC(m
ax)+1
tAC(min)+2
2tCK+tAC(m
ax)+1
ns
tAOFD
2.5
2.5
2.5
2.5
tCK
tAOF
tAC (min)
tAC (max)+
0.6
tAC (min)
tAC (max)+
0.6
ns
ODT turn-off (Power-Down mode)
tAOFPD
tAC(min)+2
2.5tCK+tAC(
max)+1
tAC(min)+2
2.5tCK+tAC(
max)+1
ns
ODT to power down entry latency
tANPD
3
3
tCK
ODT power down exit latency
tAXPD
8
8
tCK
OCD drive mode output delay
tOIT
0
tDelay
tIS + tCK + tIH
tREFI
-
7.8
-
7.8
us
2
tREFI
-
3.9
-
3.9
us
3
ODT turn-on
ODT turn-on (Power-Down mode)
ODT turn-off delay
ODT turn-off
Minimum time clocks remains ON after CKE
asynchronously drops LOW
12
0
12
tIS + tCK + tIH
ns
ns
Average periodic Refresh Interval
Note:
1. For details and notes, please refer to the relevant HYNIX component datasheet H5PS1G[4,8]3EFR.
2. 0°C ≤ TCASE ≤ 85°C
3. 85°C < TCASE ≤ 95°C
Rev. 0.2 / Sep. 2008
19
1240pin Registered DDR2 SDRAM DIMMs
(DDR2-667 & DDR2-800)
Parameter
Symbol
DDR2-667
DDR2-800
min
max
min
max
Unit
Note
DQ output access time from CK/CK
tAC
-450
+450
-400
+400
DQS output access time from CK/CK
tDQSCK
-400
+400
-350
+350
ps
CK high-level width
tCH
0.45
0.55
0.45
0.55
tCK
CK low-level width
tCL
0.45
0.55
0.45
0.55
tCK
CK half period
tHP
min(tCL,
tCH)
-
min(tCL,
tCH)
-
ps
Clock cycle time, CL=x
tCK
3000
8000
2500
DQ and DM input setup time
(differential strobe)
tDS
100
-
50
-
ps
1
DQ and DM input hold time
(differential strobe)
tDH
175
-
125
-
ps
1
Control & Address input pulse width for each input
DQ and DM input pulse width for each input
Data-out high-impedance time from CK/CK
ps
ps
tIPW
0.6
-
0.6
-
tCK
tDIPW
0.35
-
0.35
-
tCK
-
tHZ
-
tAC max
tAC max
ps
DQS low-impedance time from CK/CK
tLZ(DQS)
tAC min
tAC max
tAC min
tAC max
ps
DQ low-impedance time from CK/CK
tLZ(DQ)
2*tAC min
tAC max
2*tAC min
tAC max
ps
DQS-DQ skew for DQS and associated DQ signals
tDQSQ
-
240
-
200
ps
DQ hold skew factor
tQHS
-
340
-
300
ps
DQ/DQS output hold time from DQS
tQH
tHP - tQHS
-
tHP - tQHS
-
ps
First DQS latching transition to associated clock
edge
tDQSS
- 0.25
+ 0.25
- 0.25
+ 0.25
tCK
DQS input high pulse width
tDQSH
0.35
-
0.35
-
tCK
DQS input low pulse width
tDQSL
0.35
-
0.35
-
tCK
DQS falling edge to CK setup time
tDSS
0.2
-
0.2
-
tCK
DQS falling edge hold time from CK
tDSH
0.2
-
0.2
-
tCK
Mode register set command cycle time
tMRD
2
-
2
-
tCK
Write preamble
tWPRE
0.35
-
0.35
-
tCK
Write postamble
tWPST
0.4
0.6
0.4
0.6
tCK
Auto-Refresh to Active/Auto-Refresh command
period
tRFC
127.5
-
127.5
-
ns
Row Active to Row Active Delay for 1KB page size
tRRD
7.5
-
7.5
-
ns
tIS
200
-
175
-
ps
Address and control input setup time
Address and control input hold time
tIH
275
-
250
-
ps
Read preamble
tRPRE
0.9
1.1
0.9
1.1
tCK
Read postamble
tRPST
0.4
0.6
0.4
0.6
tCK
Activate to precharge command
tRAS
45
70000
45
70000
ns
Active to active command period for 1KB page size
products
tRRD
7.5
-
7.5
-
ns
Row Active to Row Active Delay for 2KB page size
tRRD
10
-
10
-
ns
Four Active Window for 1KB page size products
tFAW
37.5
-
35
-
ns
Four Activate Window for 2KB page size
tFAW
50
-
50
-
ns
CAS to CAS command delay
tCCD
2
Write recovery time
tWR
15
-
15
-
ns
Auto precharge write recovery + precharge time
tDAL
WR+tRP
-
WR+tRP
-
tCK
Internal write to read command delay
tWTR
7.5
-
7.5
-
ns
Internal read to precharge command delay
tRTP
7.5
Rev. 0.2 / Sep. 2008
2
7.5
tCK
ns
20
1240pin Registered DDR2 SDRAM DIMMs
Parameter
Symbol
DDR2-667
min
DDR2-800
max
min
max
Exit self refresh to a non-read command
tXSNR
tRFC + 10
Exit self refresh to a read command
tXSRD
200
-
200
-
tCK
tXP
2
-
2
-
tCK
tXARD
2
2
tCK
tXARDS
7 - AL
8 - AL
tCK
tCKE
3
3
tCK
Exit precharge power down to any non-read
command
Exit active power down to read command
Exit active power down to read command
(Slow exit, Lower power)
CKE minimum pulse width
(high and low pulse width)
ODT turn-on delay
ODT turn-on
ODT turn-on (Power-Down mode)
ODT turn-off delay
tRFC + 10
Unit
ns
tAOND
2
2
2
2
tCK
tAON
tAC (min)
tAC (max)
+0.7
tAC (min)
tAC (max)
+0.7
ns
tAONPD
tAC(min)+2
2tCK+
tAC(max)+1
tAC (min)
+2
2tCK+
tAC(max)+1
ns
tAOFD
2.5
2.5
2.5
2.5
tCK
ns
tAOF
tAC (min)
tAC (max)+ 0.6
tAC (min)
tAC (max)
+0.6
ODT turn-off (Power-Down mode)
tAOFPD
tAC (min)
+2
2.5tCK+
tAC(max)+1
tAC (min)
+2
2.5tCK+
tAC(max)+1
ODT to power down entry latency
tANPD
3
ODT power down exit latency
tAXPD
8
OCD drive mode output delay
tOIT
0
ODT turn-off
Minimum time clocks remains ON after CKE
asynchronously drops LOW
Average periodic Refresh Interval
tDelay
3
0
tCK
12
tIS + tCK
+ tIH
tIS + tCK + tIH
ns
tCK
8
12
Note
ns
ns
tREFI
-
7.8
-
7.8
us
2
tREFI
-
3.9
-
3.9
us
3
Note:
1. For details and notes, please refer to the relevant HYNIX component datasheet H5PS1G[4,8]3EFR.
2. 0°C ≤ TCASE ≤ 85°C
3. 85°C < TCASE ≤ 95°C
Rev. 0.2 / Sep. 2008
21
1240pin Registered DDR2 SDRAM DIMMs
PACKAGE OUTLINE
128Mx72 (1 rank) - HMP112P7EFR8C
Front
Register
2X 3.00MIN
4X 4.0 ± 0.1
4X FULL R
17.80
30.00
10.00
PLL
2X Ø 2.50 ± 0.10
2X 2.3 ± 0.1
5.175
2X R1.00
63.0
DETAIL-A
5.0
DETAIL-B
55.0
128.95
133.35
Back
Detail of Contacts A
Detail of Contacts B
Side
0.8 ± 0.05
3.80
1.0
2.50
3.0 ± 0.15
0.35
0.05
2.50 ± 0.20
2.70max
1.50 ± 0.10
0.3 ± 0.7
5.00
1.27 ± 0.10
Note) All dimensions are typical unless otherwise stated.
Rev. 0.2 / Sep. 2008
Millimeters
Inches
22
1240pin Registered DDR2 SDRAM DIMMs
PACKAGE OUTLINE
256Mx72 (1 rank) - HMP125P7EFR4C
Front
Register
2X 3.00MIN
4X 4.0 ± 0.1
4X FULL R
17.80
30.00
10.00
PLL
2X Ø 2.50 ± 0.10
2X 2.3 ± 0.1
5.175
2X R1.00
63.0
DETAIL-A
5.0
DETAIL-B
55.0
128.95
133.35
Register
Back
Detail of Contacts A
Detail of Contacts B
Side
0.8 ± 0.05
3.80
1.0
2.50
3.0 ± 0.15
0.35
0.05
2.50 ± 0.20
4.00max
1.50 ± 0.10
0.3 ± 0.7
5.00
1.27 ± 0.10
Note) All dimensions are typical unless otherwise stated.
Rev. 0.2 / Sep. 2008
Millimeters
Inches
23
1240pin Registered DDR2 SDRAM DIMMs
PACKAGE OUTLINE
512Mx72 (2 ranks) - HYMP151P7EFR4C
Front
4X 4.0 ± 0.1
PLL
4X FULL R
17.80
Register
Register
2X 3.00MIN
30.00
10.00
2X Ø 2.50 ± 0.10
2X 2.3 ± 0.1
5.175
2X R1.00
63.0
DETAIL-A
DETAIL-B
5.0
55.0
128.95
133.35
Detail of Contacts A
Detail of Contacts B
Register
Register
Back
Side
0.8 ± 0.05
3.80
1.0
2.50
3.0 ± 0.15
0.35
0.05
2.50 ± 0.20
4.00max
1.50 ± 0.10
0.3 ± 0.7
5.00
1.27 ± 0.10
Note) All dimensions are typical unless otherwise stated.
Rev. 0.2 / Sep. 2008
Millimeters
Inches
24
1240pin Registered DDR2 SDRAM DIMMs
PACKAGE OUTLINE
1Gx72 (4 ranks) - HMP31GP7EMR4C
Front
PLL
2X 3.00MIN
17.80
Register
4X 4.0 ± 0.1
4X FULL R
30.00
10.00
2X Ø 2.50 ± 0.10
2X 2.3 ± 0.1
5.175
2X R1.00
63.0
DETAIL-A
DETAIL-B
5.0
55.0
128.95
133.35
Register
Back
Detail of Contacts A
Detail of Contacts B
Side
0.8 ± 0.05
3.80
1.0
2.50
3.0 ± 0.15
0.35
0.05
2.50 ± 0.20
7.55max
1.50 ± 0.10
0.3 ± 0.7
5.00
1.27 ± 0.10
Note) All dimensions are typical unless otherwise stated.
Rev. 0.2 / Sep. 2008
Millimeters
Inches
25
1240pin Registered DDR2 SDRAM DIMMs
REVISION HISTORY
Revision
History
Date
0.1
Initial release
Jul. 2008
0.2
Editorial Correction
Sep. 2008
Rev. 0.2 / Sep. 2008
26