PJ2N9012 PNP Epitaxial Silicon Transistor 1W OUTPUT AMPLIFIER OF POTABLE TO-92 RADIOS IN CLASS B PUSH-PULL OPERATION • • • • SOT-23 High total power dissipation(PT=625mW) High collector Current (Ic=-500mA) Complementary to 2N9013 Excellent hEF Linearity ABSOLUTE MAXIMUM RATINGS (Ta= 25℃ ℃) Rating Symbol Value Uint Collector Base Voltage Collector Emitter Voltage VCBO VCEO -40 -20 V V Emitter Base Voltage VEBO -5 V Collector Current Ic -500 A Collector Dissipation Pc 625 Junction Temperature Tj Storage Temperature P in : 1. Base 2. Emitter 3. Collector ORDERING INFORMATION W 0 150 Tstg P in : 1.Emitter 2.Base 3.Collector C Device 0 -55 ~150 C Operating Temperature PJ2N9012CT PJ2N9012CX -20℃～+85℃ Package TO-92 SOT-23 ELECTRICAL CHARACTERISTICS (Ta= 25 0C) Characte ristic Symbol Te st Conditions Min Typ Max Unit Collector-Base Breakdown Voltage BVCBO IC= -100μA , IE =0 -40 V Collector-Emitter Breakdown Voltage BVCEO IC= -1mA , IB=0 -20 V Emitter-Base Breakdown Voltage BVEBO IE =-100μA , IC=0 -5 V Collector Cut-off Current ICBO VCB= -25V , IE = 0 -100 nA Emitter Cut-off Current IEBO VEB= -3V , IC=0 -100 nA DC Current Gain hFE1 VEB= -1V, IC =-50mA 64 120 hFE2 VEB= -1V, IC =-500mA 40 90 Collector- Base Saturation Voltage VCE(sat) IC= -500 mA , IB=-50mA Base-Emitter Saturation Voltage VBE(sat) IC= -500mA , IB=-50mA Base-Emitter On Voltage VBE(ON) VCE =-1V, Ic =-10mA 0.58 202 0.14 0.3 V 0.84 1.0 V 0.63 0.7 V hEF CLASSIFICATION Classification D E F G H hEF 64-91 78-112 96-135 112-166 144-202 1-3 2002/01.rev.A PJ2N9012 PNP Epitaxial Silicon Transistor STATIC CHARACTERISTIC DC CURRENT GAIN BASE-EMITTER SATURATION VOLTAGE COLLECTOR-EMITTER SATURATION VOLTAGE CURRENT GAIN-BANDWIDTH PRODUCT 2-3 2002/01.rev.A PJ2N9012 PNP Epitaxial Silicon Transistor 3-3 2002/01.rev.A