ISC 2SC1722

Inchange Semiconductor
Product Specification
2SC1722
Silicon NPN Power Transistors
·
DESCRIPTION
·With TO-220C package
·High breakdown voltage
·High transition frequency
APPLICATIONS
·Low frequency power amplifier
·TV horizontal/vertical driver
PINNING
PIN
DESCRIPTION
1
Base
2
Collector;connected to
mounting base
3
Emitter
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
300
V
VCEO
Collector-emitter voltage
Open base
300
V
VEBO
Emitter-base voltage
Open collector
5
V
0.2
A
IC
Collector current
PC
Collector power dissipation
Ta=25℃
1.8
W
TC=25℃
12.5
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-45~150
℃
Inchange Semiconductor
Product Specification
2SC1722
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
V(BR)CEO
Collector-emitter breakdown voltage
IC=5mA ; RBE=∞
300
V
V(BR)CBO
Collector-base breakdown voltage
IC=100μA ; IE=0
300
V
V(BR)EBO
Emitter-base breakdown voltage
IE=100μA ; IC=0
5
V
Collector-emitter saturation voltage
IC=50mA; IB=5mA
1.0
2.0
V
VBE
Base-emitter on voltage
IC=50m A ; VCE=10V
0.68
0.9
V
ICBO
Collector cut-off current
VCB=250V ;IE=0
0.1
μA
ICEO
Collector cut-off current
VCE=250V; RBE=∞
2
μA
hFE
DC current gain
IC=50m A ; VCE=10V
fT
Transition frequency
IC=30m A ; VCE=20V
80
MHz
COB
Output capacitance
IE=0 ; VCB=50V; f=1MHz
4.3
pF
VCEsat
CONDITIONS
2
MIN
TYP.
50
MAX
UNIT
300
Inchange Semiconductor
Product Specification
2SC1722
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm)
3