isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC2078 DESCRIPTION ·Collector-Emitter Voltage:VCER= 75V(Min) ;RBE=150Ω ·Collector Current:IC=3A APPLICATIONS ·27MHz RF Power Amplifier Applications n c . i m e ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT s c s i . w VCBO Collector-Base Voltage VCER Collector-Emitter Voltage RBE=150Ω 75 VEBO Emitter-Base Voltage 5 V w w 80 V V IC Collector Current-Continuous 3 A ICM Collector Current-Peak 5 A Collector Power Dissipation @ Ta=25℃ 1.2 W PC TJ Tstg Collector Power Dissipation @ TC=50℃ 10 Junction Temperature 150 ℃ -55~150 ℃ Storage Temperature Range isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC2078 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CBO Collector-Base Breakdown Voltage IC=0.1mA; IB= 0 80 V V(BR)CER Collector-Emitter Breakdown Voltage IC=0.1mA; RBE=150Ω 75 V V(BR)EBO Emitter-Base Breakdown Voltage IE=0.1mA; IC= 0 5 V VCE(sat) Collector-Emitter Saturation Voltage IC=1A; IB= 0.1A 0.6 V VBE(sat) Base-Emitter Saturation Voltage IC=1A; IB= 0.1A 1.2 V ICBO Collector Cutoff Current VCB= 40V ; IE= 0 10 μA IEBO Emitter Cutoff Current 10 μA hFE DC Current Gain COB Output Capacitance n c . i m e s c s i . w VEB= 4V; IC= 0 w w IC= 500mA ; VCE= 5V 25 45 IE= 0; VCB= 10V; ftest= 1MHz fT Current-Gain—Bandwidth Product PO Output Power IC= 500mA; VCE= 10V 200 60 pF 100 MHz 4.0 W 60 % VCC= 12V;Pin=0.2W, f=27MHz η Power Efficiency hFE Classifications B C D E 25-50 40-80 60-120 100-200 isc Website：www.iscsemi.cn 2