isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC2209 DESCRIPTION ·Collector-Emitter Breakdown Voltage: V(BR)CEO= 40V(Min) ·High Collector Power Dissipation ·Complement to Type 2SA963 APPLICATIONS ·Designed for low frequency power amplification. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage VALUE s c s i . w w w 50 V 40 V 5 V 1.5 A IC Collector Current-Continuous ICM Collector Current-Peak 3 A PC Collector Power Dissipation @ TC=25℃ 10 W TJ Junction Temperature 150 ℃ -55~150 ℃ Tstg n c . i m e UNIT Storage Temperature Range isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC2209 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL CONDITIONS MIN TYP. MAX UNIT V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA; IE= 0 50 V V(BR)CEO Collector-Emitter Breakdown Voltage IC= 2mA; IB= 0 40 V VCE(sat) Collector-Emitter Saturation Voltage IC= 1.5A; IB= 150mA 1.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 2A; IB= 0.2mA 1.5 V ICBO Collector Cutoff Current VCB= 20V; IE= 0 1 μA ICEO Collector Cutoff Current VCE= 10V; IB= 0 100 μA ICEO Collector Cutoff Current 10 μA hFE DC Current Gain fT COB PARAMETER B w s c s .i VEB= 5V; IC= 0 IC= 1A; VCE= 5V R 80-160 120-220 isc Website：www.iscsemi.cn 80 220 IE= -0.5A; VCB= 5V 150 MHz IE= 0; VCB= 5V, ftest= 1MHz 50 pF hFE Classifications Q n c . i m e B ww Current-Gain—Bandwidth Product Output Capacitance B 2