Inchange Semiconductor Product Specification 2SC2590 Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-126 package ・Complement to type 2SA1110 ・Excellent current IC characteristics of forward current transfer ratio hFE vs. collector ・High transition frequency fT ・Optimum for the driver stage of a 40 W to 60 W output amplifier APPLICATIONS ・For low-frequency power amplification PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to mounting base 3 Base 体 导 半 固电 EM S E NG Absolute Maximun Ratings (Ta=25℃) R O T UC D N O IC VCEO A H C IN Collector-emitter voltage Open base VEBO Emitter-base voltage Open collector IC Collector current (DC) 0.5 A ICM Collector current-Peak 1.0 A PC Collector power dissipation 1.2* W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ SYMBOL VCBO PARAMETER CONDITIONS VALUE UNIT Collector-base voltage Open emitter 120 V 120 V 5 V Note) *: Without heat sink TC=25℃ Inchange Semiconductor Product Specification 2SC2590 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=100μA;IB=0 120 V V(BR)EBO Emitter-base breakdown voltage IE=10μA ;IC=0 5 V VCEsat Collector-emitter saturation voltage IC=0.3A ;IB=30mA 1.0 V VBEsat Base-emitter saturation voltage IC=0.3A ;IB=30mA 1.2 V hFE-1 DC current gain IC=150mA ; VCE=10V 90 hFE-2 DC current gain IC=0.5A ; VCE=5V 65 COB Output capacitance IE=0 ; VCB=10V;f=1MHz fT Transition frequency 体 导 半 固电 90-155 R IC=50mA ; VCB=10V,f=200MHz EM S E NG hFE-1 Classifications Q CONDITIONS A H C IN 130-220 2 MIN TYP. MAX 220 100 20 R O T UC D N O IC UNIT 200 pF MHz Inchange Semiconductor Product Specification 2SC2590 Silicon NPN Power Transistors PACKAGE OUTLINE 体 导 半 固电 EM S E NG A H C IN D N O IC Fig.2 Outline dimensions 3 R O T UC Inchange Semiconductor Product Specification 2SC2590 Silicon NPN Power Transistors 体 导 半 固电 EM S E NG A H C IN 4 D N O IC R O T UC