Inchange Semiconductor Product Specification 2SC3944 2SC3944A Silicon NPN Power Transistors · DESCRIPTION ·With TO-220Fa package ·Complement to type 2SA1535/1535A ·High transition frequency APPLICATIONS ·For low-frequency driver and high power amplification ·Optimum for the driver-stage of a 60W to 100W output amplifier PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-220Fa) and symbol Absolute maximum ratings (Ta=25℃) SYMBOL PARAMETER CONDITIONS 2SC3944 VCBO Collector-base voltage 150 Open base 2SC3944A VEBO Emitter-base voltage V 180 2SC3944 Collector-emitter voltage UNIT 150 Open emitter 2SC3944A VCEO VALUE V 180 Open collector 5 V IC Collector current 1.0 A ICM Collector current-peak 1.5 A PC Collector power dissipation Ta=25℃ 2.0 TC=25℃ 15 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ Inchange Semiconductor Product Specification 2SC3944 2SC3944A Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS 2SC3944 V(BR)CEO Collector-emitter breakdown voltage TYP. MAX UNIT 150 IC=1mA; IB=0 2SC3944A V(BR)EBO MIN V 180 Emitter-base breakdown voltage IE=10μA; IC=0 VCEsat Collector-emitter saturation voltage IC=0.5 A;IB=50m A 2.0 V VBEsat Base-emitter saturation voltage IC=0.5 A;IB=50m A 2.0 V 10 μA ICBO 2SC3944 VCB=150V; IE=0 2SC3944A VCB=180V; IE=0 5 V Collector cut-off current hFE-1 DC current gain IC=150mA ; VCE=10V 95 hFE-2 DC current gain IC=500mA ; VCE=5V 50 fT Transition frequency IC=50mA ; VCB=10V 200 MHz COB Output capacitance IE=0; VCB=10V;f=1MHz 30 pF hFE classifications Q R 95-155 130-220 2 220 Inchange Semiconductor Product Specification 2SC3944 2SC3944A Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm) 3