isc Product Specification INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor DESCRIPTION ·Collector-Emitter Sustaining Voltage: VCEO(SUS)= 400V (Min) APPLICATIONS ·Power switching ·Solenoid drivers ·Automotive ignition ·Series and shunt regulators ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 400 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 7 V IC Collector Current 15 A IB Base Current 4 A PC Collector Power Dissipation @TC=25℃ 35 W Tj Junction Temperature 150 ℃ -65~150 ℃ B Tstg Storage Temperature Range THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 1.5 ℃/W isc Website：www.iscsemi.cn BUX37 isc Product Specification INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor BUX37 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 5A; IB= 0; L= 1.5mH V(BR)EBO Emitter-Base Breakdown Voltage IE= 50mA; IC= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 7A; IB= 70mA 1.5 V V CE(sat)-2 Collector-Emitter Saturation Voltage IC= 10A; IB= 150mA 2.0 V Base-Emitter Saturation Voltage IC= 10A; IB= 150mA 2.7 V ICEO Collector Cutoff Current VCE= 400V; IB= 0 0.25 mA hFE DC Current Gain IC= 15A; VCE= 5V V BE(sat) isc Website：www.iscsemi.cn CONDITIONS B MIN TYP. MAX UNIT 400 V 7 V B 20