isc Product Specification INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor DESCRIPTION ·Built In Clamping Zener ·High Operating Junction Temperature APPLICATIONS ·Designed for use in automotive environment as electronic ignition power actuators. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT 350 V VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 15 A ICM Collector Current-Peak 30 A IB Base Current 1 A IBM Base Current-Peak 5 A PC Collector Power Dissipation @ TC=25℃ 155 W TJ Junction Temperature 175 ℃ -65~175 ℃ B Tstg Storage Temperature Range THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 0.97 ℃/W isc Website：www.iscsemi.cn BU941ZP isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor MJW16010A ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL VCL PARAMETER CONDITIONS MIN TYP. 350 MAX UNIT 500 V Clamping Voltage IC= 100mA VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 8A; IB= 0.1A 1.8 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 10A; IB= 0.25A 1.8 V VCE(sat)-3 Collector-Emitter Saturation Voltage IC= 12A; IB= 0.3A 2.0 V VBE(sat)-1 Base-Emitter Saturation Voltage IC= 8A; IB= 0.1A 2.2 V VBE(sat)-2 Base-Emitter Saturation Voltage IC= 10A; IB= 0.25A 2.5 V VBE(sat)-3 Base-Emitter Saturation Voltage IC= 12A; IB= 0.3A 2.7 V ICEO Collector Cutoff Current VCE= 300V; IB= 0 VCE= 300V; IB= 0;TC=125℃ 0.1 0.5 mA IEBO Emitter Cutoff Current VEB= 5V; IC=0 20 mA hFE DC Current Gain IC= 5A ; VCE= 10V VECF C-E Diode Forward Voltage IF= 10A 2.5 V B B 300 Switching times;Inductive load tstg Storage Time IC= 7A; IB= 70mA, RBE= 47Ω; Vclamp= 300V, VBE= 0; L= 7mH 15 μs 0.5 μs B tf Fall Time isc Website：www.iscsemi.cn 2