Transistors SMD Type Silicon NPN Epitaxial 2SC4684 TO-252 6.50 +0.2 5.30-0.2 +0.15 1.50 -0.15 +0.15 -0.15 Unit: mm 2.30 +0.1 -0.1 +0.8 0.50-0.7 Features +0.1 0.60-0.1 2.3 3 .8 0 +0.15 5.55 -0.15 +0.1 0.80-0.1 0.127 max +0.25 2.65 -0.1 High power dissipation. +0.28 1.50 -0.1 +0.2 9.70 -0.2 Low collector saturation voltage. +0.15 0.50 -0.15 High DC current gain. 1 Base +0.15 4.60-0.15 2 Collector 3 Emitter Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Symbol Rating Unit VCBO 50 V VCEO 20 V VCES 40 V VEBO 8 V Collector current IC 5 A Collector current pulse * ICP 8 A Base current IB 0.5 A 1.0 W 10 W Emitter-base voltage Collector power dissipation Ta = 25 PC Tc = 25 Junction temperature Tj 150 Storage temperature Tstg -55 to +150 * Pulse test: Pulse width = 10 ms (max), duty cycle = 30% (max) Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min ICBO VCB = 50 V, IE = 0 Emitter cut-off current IEBO VEB = 8 V, IC = 0 Collector-emitter breakdown voltage VCEO IC = 10 mA, IB = 0 20 VCE = 2 V, IC = 0.5 A 800 VCE = 2 V, IC = 4 A 250 Collector cut-off current DC current gain hFE Collector-emitter saturation voltage Base-emitter voltage fT Collector output capacitance Cob Max Unit 100 nA 100 nA V 3200 VCE (sat) IC = 4 A, IB = 40 mA VBE Transition frequency Typ VCE = 2 V, IC = 4 A 0.5 V 1.2 V VCE = 2 V, IC = 0.5 A 150 MHz VCB = 10 V, IE = 0, f = 1 MHz 45 pF Marking Marking C4684 www.kexin.com.cn 1