Transistors SMD Type PNP Transistors KMBT5401(MMBT5401) SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features +0.1 1.3-0.1 +0.1 2.4-0.1 High Voltage Transistors 0.4 3 1 0.55 Pb-Free Packages are Available 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-base voltage Parameter VCBO -160 V Collector-emitter voltage VCEO -150 V Emitter-base voltage VEBO -5 V Collector current-continuous IC -0.6 A Collector Power Dissipation Pc 300 mW TJ, Tstg -55 to +150 Junction and storage temperature Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Collector-base breakdown voltage VCBO IC = -100 Collector-emitter breakdown voltage * VCEO IC =- 1.0 mA, IB = 0 Emitter-base breakdown voltage VEBO IE = -10 Collector cutoff current ICBO VCB =- 120 V, IE = 0 -0.1 A Emitter cutoff current IEBO VEB = -4.0 V, IC = 0 -0.1 A IC = -1.0 mA, VCE = -5 V 80 DC current gain * hFE IC = -10 mA, VCE = -5 V 100 IC = -50 mA, VCE = -5 V 50 A, IE = 0 A, IC = 0 -160 V -150 V -5 V 300 Collector-emitter saturation voltage * VCE(sat) IC = -50 mA, IB = -5.0 mA -0.5 V Base-emitter saturation voltage * VBE(sat) IC = -50 mA, IB = -5.0 mA -1.0 V Transiston frequency fT * Pulse Test: Pulse Width = 300 VCE=-5V,IC=-10mA,f=30MHz 100 MHz s, Duty Cycle=2.0%. Marking Marking 2L www.kexin.com.cn 1 Transistors SMD Type KMBT5401(MMBT5401) Typical Characteristics Fig.1 Max Power Dissipation vs. Ambient Temperature Fig.3 DC Current Gain vs. Collector Current Fig.5 Gain Bandwidth Product vs. Collector Current 2 www.kexin.com.cn Fig.2 Collector Emitter Saturation Voltage vs.Collector Current Fig.4 Base Emitter Voltage vs.Collector Current