KEXIN 2SD1963

Transistors
SMD Type
Power Transistor
2SD1963
Features
Low saturation voltage.
Excellent DC current gain characteristics.
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Collector-base voltage
VCBO
50
V
Collector-emitter voltage
VCEO
20
V
Emitter-base voltage
VEBO
6
V
Collector current
IC
3
A
W
Collector power dissipation
PC
0.5
Junction temperature
Tj
150
Storage temperature
Tstg
-55 to +150
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
Min
Typ
Max
Unit
Collector-base breakdown voltage
BVCBO
IC=50ìA
50
V
Collector-emitter breakdown voltage
BVCEO
IC=1mA
20
V
Emitter-base breakdown voltage
BVEBO
IE=50ìA
6
V
Collector cutoff current
ICBO
VCB=40V
Emitter cutoff current
IEBO
VEB=5V
DC current transfer ratio
hFE
VCE=2V, IC=0.5A
VCE(sat) IC=1.5 A, IB=0.15A
Collector-emitter saturation voltage
Output capacitance
fT
Transition frequency
Cob
180
0.5
ìA
0.5
ìA
560
0.25
0.45
V
VCE=6V, IE= -50mA, f=100MHz
150
MHz
VCB=20V, IE=0A, f=1MHz
35
pF
hFE Classification
DG
Marking
Rank
R
S
hFE
180 390
270 560
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