Transistors SMD Type General Purpose Transistor 2SA1576A Features Excellent hFE linearity. 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO -60 V Collector-emitter voltage VCEO -50 V Emitter-base voltage VEBO -6 V Collector current IC -0.15 A Collector power dissipation PC 0.2 W Junction temperature Tj 150 Storage temperature Tstg -55 to +150 Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Collector-base breakdown voltage BVCBO IC=-50ìA -60 V Collector-emitter breakdown voltage BVCEO IC=-1mA -50 V Emitter-base breakdown voltage BVEBO IE=-50ìA -6 ICBO VCB=-60V -0.1 ìA IEBO VEB=-6V -0.1 ìA VCE(sat) IC/IB=-50mA/-5mA -0.5 V Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage DC current transfer ratio VCE=-6V, IC=-1mA hFE Transition frequency fT Output capacitance Cob V 120 560 VCE=-12V, IE=2mA, f=30MHz 140 VCB=-12V, IE=0A, f=1MHz 4.0 MHz 5.0 pF hFE Classification Marking FQ FR FS hFE 120 270 180 390 270 560 www.kexin.com.cn 1