KEXIN 2SD2153

Transistors
SMD Type
High Gain Amplifier Transistor
2SD2153
SOT-89
Unit: mm
+0.1
4.50-0.1
Features
+0.1
1.50-0.1
+0.1
1.80-0.1
+0.1
2.50-0.1
Excellent DC current gain characteristics.
2
3
+0.1
0.53-0.1
+0.1
0.44-0.1
2.60
+0.1
-0.1
+0.1
0.80-0.1
1
+0.1
0.48-0.1
+0.1
4.00-0.1
Low saturation voltage.
1. Base
0.40
+0.1
-0.1
+0.1
3.00-0.1
2. Collector
3. Emiitter
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Collector-base voltage
VCBO
30
V
Collector-emitter voltage
VCEO
25
V
Emitter-base voltage
VEBO
6
V
Collector current
IC
2
A
Collector power dissipation
PC
0.5
W
Junction temperature
Tj
150
Storage temperature
Tstg
-55 to +150
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
Min
Typ
Max
Unit
Collector-base breakdown voltage
BVCBO
IC=50ìA
30
V
Collector-emitter breakdown voltage
BVCEO
IC=1mA
25
V
Emitter-base breakdown voltage
BVEBO
IE=50ìA
6
V
ICBO
VCB=20V
IEBO
VEB=5V
Collector cutoff current
Emitter cutoff current
VCE(sat) IC=1A, IB=20mA
Collector-emitter saturation voltage
DC current transfer ratio
hFE
Output capacitance
fT
Transition frequency
Cob
VCE=6V, IC=0.5A
0.12
560
0.5
ìA
0.5
ìA
0.5
V
2700
VCE=10V, IE= -10mA, f=100MHz
110
MHz
VCB=10V, IE=0A, f=1MHz
22
pF
hFE Classification
DN
Marking
Rank
U
V
W
hFE
560 1200
820 1800
1200 2700
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