Transistors IC SMD Type NPN General Purpose Transistor BC846W,BC847W,BC848W Features Low current (max. 100 mA). Low voltage (max. 65 V). 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Symbol BC846W BC847W BC848W Unit Collector-base voltage Parameter VCBO 80 50 30 V Collector-emitter voltage VCEO 65 45 30 V Emitter-base voltage VEBO 6 6 5 V Collector current IC 100 mA Peak collector current ICM 200 mA Peak base current IBM 200 mA Total power dissipation Ptot 200 mW Tj 150 Storage temperature Tstg -65 to +150 Operating ambient temperature Ramb -65 to +150 Thermal resistance from junction to ambient Rth j-a 625 Junction temperature K/W www.kexin.com.cn 1 Transistors IC SMD Type BC846W,BC847W,BC848W Electrical Characteristics Ta = 25 Parameter Symbol Collector cutoff current Emitter cutoff current DC current gain Max Unit ICBO VCB = 30 V; IE = 0 Testconditons Min 15 nA ICBO VCB = 30 V; IE = 0;Tj = 150 5 ìA IEBO VEB = 5 V; IC = 0 100 nA BC846W 110 450 BC847W,BC848W 110 800 hFE BC846AW,BC847AW IC = 2 mA; VCE = 5 V 110 180 220 BC846BW,BC847BW 200 290 450 BC847CW 420 520 800 Collector-emitter saturation voltage VCE(sat) Base-emitter saturation voltage VBE(sat) IC = 10 mA; IB = 0.5 mA 90 250 mV IC = 100 mA; IB = 5 mA; * 200 600 mV IC = 10 mA; IB = 0.5 mA 700 IC = 100 mA; IB = 5 mA;* Base-emitter voltage VBE IC = 2 mA; VCE = 5 V Collector capacitance CC VCB = 10 V; IE = Ie = 0;f = 1 MHz Transition frequency fT VCE = 5 V; IC = 10 mA;f = 100 MHz Noise figure NF IC = 200 ìA; VCE = 5 V;RS = 2 kÙ; f = 1 kHz;B = 200 Hz 300µs, ä 0.02. hFE Classification 2 TYPE BC846W BC846AW BC846BW Marking 1D 1A 1B TYPE BC847W BC847AW BC847BW BC847CW Marking 1H 1E 1F 1G TYPE BC848W Marking 1M www.kexin.com.cn mV 900 580 IC = 10 mA; VCE = 5 V * Pulse test: tp Typ 660 mV 700 mV 770 mV 3 100 pF MHz 10 dB