Transistors SMD Type PNP General Purpose Transistors KC860W(BC860W) Features Low current (max. 100 mA) Low voltage (max. 45 V). 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-Base Voltage VCBO -50 V Collector-Emitter Voltage VCEO -45 V Emitter-Base Voltage VEBO -5 V Collector Current DC IC -100 mA Peak collector current ICM -200 mA Peak base current IBM -200 mA PD 200 mW 625 K/W Power Dissipation Thermal Resistance, Junction to Ambient Operating and Storage Junction Temperature Range R JA TJ, Tstg -65 to +150 www.kexin.com.cn 1 Transistors SMD Type KC860W(BC860W) Electrical Characteristics Ta = 25 Parameter Symbol ICBO Collector-Cutoff Current Emitter- cutoff current Testconditons Max Unit VCB =- 30 V, IE = 0 -15 nA VCB =- 30 V, IE = 0, TA = 150 -4 IEBO IC=0,VEB=-5V hFE IC = -2.0 mA, VCE = -5.0 V Min -100 KC860W DC Current Gain KC860BW KC860CW Collector-Emitter Saturation Voltage VCE(sat) Base-Emitter Voltage VBE Collector capacitance Cc Emitter capacitance Ce Typ 220 800 220 475 420 800 -300 mV IC = -100 mA, IB =- 5.0 mA -650 mV -750 mV -820 mV 5 pF IC = -2mA, IB=-5A -600 IE = ie = 0; VCB = -10 V; f = 1 MHz IC = ic = 0; VEB = -500 mV; f = 1 MHz IC = -200 A; VCE = -5 V; RS = 2 k 10 Hz to 15.7 kHz F Transition frequency IC=-200 A; VCE = -5 V; RS = 2 k 1 kHz; B = 200 Hz Marking 2 NO. KC860W KC860BW KC860CW Marking 4H 4F 4G www.kexin.com.cn 10 ;f = ;f = IC = -10 mA; VCE = -5 V; f = 100 MHz fT nA IC = -10 mA, IB =- 0.5 mA IC = -10 mA, IB=-5A Noise figure A 100 pF 4 dB 4 dB MHz