IC
IC
SMD Type
HEXFET Power MOSFET
KRF7204
Features
Adavanced Process Technology
Ultra Low On-Resistance
P-Channel MOSFET
Surface Mount
Available in Tape & Reel
Dynamic dv/dt Rating
Fast Switching
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
ID
-5.3
Continuous Drain Current, VGS @ 10V @ TA = 70
ID
-4.2
Pulsed Drain Current *1
IDM
-21
PD
2.5
Continuous Drain Current, VGS @ 10V @ TA = 25
Power Dissipation
@TC = 25
Linear Derating Factor
0.02
Gate-to-Source Voltage
VGS
Peak Diode Recovery dv/dt *2
dv/dt
-1.7
TJ, TSTG
-55 to + 150
Junction and Storage Temperature Range
Maximum Junction-to-Ambient *3
R
JA
12
50
Unit
A
W/
V
V/nS
W
/W
*1 Repetitive rating; pulse width limited by max. junction temperature.
*2 ISD
-5.3A, di/dt
90A/
s, VDD
*3 Surface mounted on FR-4 board, t
V(BR)DSS,TJ
150
10sec.
www.kexin.com.cn
1
IC
IC
SMD Type
KRF7204
Electrical Characteristics Ta = 25
Parameter
Symbol
Drain-to-Source Breakdown Voltage
V(BR)DSS
Breakdown Voltage Temp. Coefficient
V(BR)DSS/
Static Drain-to-Source On-Resistance
RDS(on)
Gate Threshold Voltage
VGS(th)
Forward Transconductance
gfs
IDSS
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
IGSS
Gate-to-Source Reverse Leakage
Total Gate Charge
Testconditons
VGS = 0V, ID = -250A
Min
Typ
Max
-20
V
-0.022
TJ ID = -1mA,Reference to 25
V/
VGS = -10V, ID = -5.3A*1
0.060
VGS = -4.5V, ID = -2.0A*1
0.10
VDS = VGS, ID = -250 A
VDS = -15V, ID = -5.3A*1
-1.0
-2.5
7.9
-2.5
VDS = -16V, VGS = 0V, TJ = 125
-250
VGS = -12V
-100
VGS = 12V
100
ID = -5.3A
Gate-to-Source Charge
Qgs
VDS = -10V
5.0
Qgd
VGS = -10V,*1
8.0
Turn-On Delay Time
td(on)
VDD = -10V
nA
14
nC
30
tr
ID = -1.0A
26
60
td(off)
RG = 6.0
100
150
Fall Time
tf
RD = 10
68
100
Internal Source Inductance
LS
2.5
Internal Drain Inductance
LD
4.0
Input Capacitance
Ciss
VGS = 0V
860
Output Capacitance
Coss
VDS = -10V
750
Reverse Transfer Capacitance
Crss
f = 1.0MHz
230
Turn-Off Delay Time
A
25
Gate-to-Drain ("Miller") Charge
Rise Time
V
S
VDS = -16V, VGS = 0V
Qg
Unit
*1
ns
nH
Continuous Source Current
Body Diode)
pF
IS
-2.5
ISM
-15
A
Pulsed Source Current
Body Diode) *2
V
85
100
ns
77
120
VSD
Reverse Recovery Time
trr
TJ = 25 , IF =-2.4A
Reverse RecoveryCharge
Qrr
di/dt = 100A/
Forward Turn-On Time
ton
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
*1 Pulse width
300 s; duty cycle
2%.
*2 Repetitive rating; pulse width limited bymax
2
-1.2
Diode Forward Voltage
www.kexin.com.cn
TJ = 25 , IS = -1.25A, VGS = 0V*1
s*1
C