STB/P432S S a mHop Microelectronics C orp. Ver 1.0 N-Channel Logic Enhancement Mode Field Effect Transistor FEATURES Super high dense cell design for extremely low RDS(ON). PRODUCT SUMMARY V DSS R DS(ON) (m Ω) Max ID High power and current handling capability. 9 @ VGS=10V 40V TO-220 & TO-263 package. 60A 11 @ VGS=4.5V D G G D S S S TB S E R IE S TO-263(DD-P AK) S TP S E R IE S TO-220 ABSOLUTE MAXIMUM RATINGS ( T C=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM EAS Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous a TC=25°C b -Pulsed Sigle Pulse Avalanche Energy d a PD Maximum Power Dissipation TJ, TSTG Operating Junction and Storage Temperature Range TC=25°C THERMAL CHARACTERISTICS R JC Thermal Resistance, Junction-to-Case R JA Thermal Resistance, Junction-to-Ambient Details are subject to change without notice. Limit 40 ±20 Units V V 60 A 240 A 130 mJ 62.5 W -55 to 150 °C 2 °C/W 50 °C/W Jun,24,2008 1 www.samhop.com.tw STB/P432S Ver 1.0 ELECTRICAL CHARACTERISTICS ( T C=25 °C unless otherwise noted ) 4 Symbol Parameter OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS Zero Gate Voltage Drain Current IDSS Gate-Body Leakage Current IGSS ON CHARACTERISTICS Gate Threshold Voltage VGS(th) RDS(ON) Drain-Source On-State Resistance gFS Forward Transconductance DYNAMIC CHARACTERISTICS c Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS c SWITCHING CHARACTERISTICS tD(ON) Turn-On Delay Time tr Rise Time tD(OFF) Turn-Off Delay Time tf Fall Time Qg Total Gate Charge Qgs Qgd Gate-Source Charge Conditions Min VGS=0V , ID=250uA 40 Diode Forward Voltage 1 ±100 VGS= ±20V , VDS=0V VDS=VGS , ID=250uA VGS=10V , ID=30A VGS=4.5V , ID=28A VDS=10V , ID=30A VDS=15V,VGS=0V f=1.0MHz VDD=15V ID=30A VGS=10V RGEN=3.3 ohm Max 1 Units V VDS=32V , VGS=0V uA nA 1.7 7 3 9 V m ohm 9 26 11 m ohm S 1600 280 150 pF pF pF 20 21 ns ns ns ns 45 16 VDS=15V,ID=30A,VGS=10V 32 nC VDS=15V,ID=28A,VGS=4.5V 15 3.5 7.3 nC VDS=15V,ID=30A, VGS=10V Gate-Drain Charge c DRAIN-SOURCE DIODE CHARACTERISTICS Maximum Continuous Drain-Source Diode Forward Current IS VSD Typ VGS=0V,IS=30A 0.95 nC nC 30 A 1.3 V Notes _ 10sec. a.Surface Mounted on FR4 Board,t < _ 2%. _ 300us, Duty Cycle < b.Pulse Test:Pulse Width < c.Guaranteed by design, not subject to production testing. d.Starting TJ=25°C,L=1.25mH,RG=25Ω,VDD = 20V.(See Figure13) Jun,24,2008 2 www.samhop.com.tw STB/P432S Ver 1.0 60 20 V G S =4 V T j =125 C I D, Drain Current(A) I D, Drain Current(A) 50 V G S = 4.5V 40 V G S = 10V 30 20 V G S =3 V 10 15 -55 C 10 25 C 5 V G S = 2.5V 0 0 0 0.5 1 2 1.5 2.5 3 0 V DS, Drain-to-Source Voltage(V) 3.2 4.0 4.8 Figure 2. Transfer Characteristics 15 R DS(on), On-Resistance Normalized 2.0 12 R DS(on)(m Ω) 2.4 VGS, Gate-to-Source Voltage(V) Figure 1. Output Characteristics V G S = 4.5V 9 6 V G S = 10V 3 1 1.6 0.8 1 12 24 36 48 1.8 1.6 V G S =4.5V I D =28A 1.2 1.0 0 60 V G S =10V I D =30A 1.4 0 25 50 100 75 125 150 T j ( °C ) ID, Drain Current(A) Tj, Junction Temperature(° C ) Figure 3. On-Resistance vs. Drain Current and Gate Voltage Figure 4. On-Resistance Variation with Drain Current and Temperature BVDSS, Normalized Drain-Source Breakdown Voltage Vth, Normalized Gate-Source Threshold Voltage 1.3 V DS =V G S I D =250uA 1.2 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 150 Tj, Junction Temperature( ° C ) 1.15 I D =250uA 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 0 25 50 75 100 125 150 Tj, Junction Temperature(° C ) Figure 5. Gate Threshold Variation with Temperature Figure 6. Breakdown Voltage Variation with Temperature Jun,24,2008 3 www.samhop.com.tw STB/P432S Ver 1.0 30 20.0 Is, Source-drain current(A) ID=30A R DS(on)(m Ω) 25 20 75 C 15 125 C 10 25 C 5 0 2 4 6 8 75 C 125 C 25 C 10 0.24 0 1.2 0.96 0.72 0.48 V GS, Gate-to-Source Voltage(V) V SD, Body Diode Forward Voltage(V) Figure 7. On-Resistance vs. Gate-Source Voltage Figure 8. Body Diode Forward Voltage Variation with Source Current 10 V GS, Gate to Source Voltage(V) 2000 C, Capacitance(pF) 5.0 1.0 0 2400 C is s 1600 1200 800 C os s 400 C rs s 0 0 5 10 15 20 25 30 V DS =15V I D =30A 8 6 4 2 0 0 5 10 15 20 25 30 35 40 V DS, Drain-to-Source Voltage(V) Qg, Total Gate Charge(nC) Figure 9. Capacitance Figure 10. Gate Charge 220 1000 T D(off) 100 60 Tr T D(on) I D, Drain Current(A) Switching Time(ns) 10.0 Tf 10 V DS =15V ,ID=30A 1 100 R 6 10 Rg, Gate Resistance(Ω) it 10 1m 10 m 0u s s s 10 1 0.1 60 100 300 600 ( L im DC V G S =10V 1 DS ) ON V G S =10V S ingle P ulse T c=25 C 1 10 100 VDS, Drain-Source Voltage(V) Figure 12. Maximum Safe Operating Area Figure 11. switching characteristics Jun,24,2008 4 www.samhop.com.tw STB/P432S Ver 1.0 V ( BR )D S S 15V tp L VDS DR IV E R D .U .T RG + - VD D IA S A 20V 0.0 1 tp IAS Unclamped Inductive Test Circuit Unclamped Inductive Waveforms Figure 13b. Figure 13a. r(t),Normalized Effective Transient Thermal Impedance 2 1 D=0.5 0.2 0.1 0.1 P DM 0.05 t1 0.02 t2 0.01 1. 2. 3. 4. S ingle P uls e 0.01 0.00001 0.0001 0.001 0.01 0.1 R J C (t)=r (t) * R J C R J C =S ee Datas heet T J M-T C = P * R J C (t ) Duty C ycle, D=t1/t2 1 10 Square Wave Pulse Duration (msec) Figure 14. Normalized Thermal Transient Impedance Curve Jun,24,2008 5 www.samhop.com.tw STB/P432S Ver 1.0 Jun,24,2008 6 www.samhop.com.tw STB/P432S Ver 1.0 Jun,24,2008 7 www.samhop.com.tw STB/P432S Ver 1.0 TO-220/263AB Tube Jun,24,2008 8 www.samhop.com.tw