STM8456 S a mHop Microelectronics C orp. Ver 1.0 Dual Enhancement Mode Field Effect Transistor ( N and P Channel ) PRODUCT SUMMARY (N-Channel) V DSS ID 40V 6.2A PRODUCT SUMMARY (P-Channel) R DS(ON) (m Ω) Max V DSS ID -40V -5.3A R DS(ON) (m Ω) Max 33 @ VGS=10V 45 @ VGS=-10V 45 @ VGS=4.5V 70 @ VGS=-4.5V S O-8 1 D2 5 4 G2 D2 6 3 S2 D1 7 2 G1 D1 8 1 S1 ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol VDS VGS Parameter Drain-Source Voltage Gate-Source Voltage ID Drain Current-Continuous IDM EAS TA=25°C TA=70°C a -Pulsed b Single Pulse Avalanche Energy a PD Maximum Power Dissipation TJ, TSTG Operating Junction and Storage Temperature Range d N-Channel P-Channel 40 ±20 6.2 -40 ±20 -5.3 4.9 -4.2 A A 25 -22 A 9 16 mJ TA=25°C 2 TA=70°C 1.28 THERMAL CHARACTERISTICS R JA Thermal Resistance, Junction-to-Ambient -55 to 150 a 62.5 Details are subject to change without notice. Units V V W °C °C/W May,29,2008 1 www.samhop.com.tw STM8456 Ver 1.0 N-Channel ELECTRICAL CHARACTERISTICS ( T A=25 °C unless otherwise noted ) 4 Symbol Parameter OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS Zero Gate Voltage Drain Current IDSS Gate-Body Leakage Current IGSS Conditions Min VGS=0V , ID=250uA 40 Typ Max Units V 1 ±100 VDS=32V , VGS=0V VGS= ±20V , VDS=0V uA nA a ON CHARACTERISTICS Gate Threshold Voltage VGS(th) RDS(ON) Drain-Source On-State Resistance gFS Forward Transconductance 1.5 3 26 33 V m ohm VGS=4.5V , ID=5.3A 33 45 m ohm VDS=10V , ID=6.2A 13.8 S VDS=20V,VGS=0V f=1.0MHz 580 82 50 pF pF pF 11 ns 10.2 ns 17.3 20 11.3 5.8 ns ns nC nC 1.2 2.9 nC nC VDS=VGS , ID=250uA VGS=10V , ID=6.2A 1 c DYNAMIC CHARACTERISTICS Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING CHARACTERISTICS Turn-On Delay Time tD(ON) tr Rise Time tD(OFF) Turn-Off Delay Time tf Fall Time Qg Total Gate Charge Qgs Qgd Gate-Source Charge Gate-Drain Charge c VDD=20V ID=1A VGS=10V RGEN=3.3 ohm VDS=20V,ID=6.2A,VGS=10V VDS=20V,ID=5.3A,VGS=4.5V VDS=20V,ID=6.2A, VGS=10V DRAIN-SOURCE DIODE CHARACTERISTICS VSD Diode Forward Voltage b VGS=0V,IS=1.3A 0.79 1.2 V May,29,2008 2 www.samhop.com.tw STM8456 Ver 1.0 P-Channel ELECTRICAL CHARACTERISTICS ( T A=25 °C unless otherwise noted ) 4 Symbol Parameter OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS Zero Gate Voltage Drain Current IDSS Gate-Body Leakage Current IGSS ON CHARACTERISTICS Gate Threshold Voltage VGS(th) RDS(ON) Drain-Source On-State Resistance gFS Forward Transconductance DYNAMIC CHARACTERISTICS CISS COSS CRSS Conditions Min VGS=0V , ID=-250uA -40 Qgs Qgd Gate-Source Charge Gate-Drain Charge -1 ±100 VGS= ±20V , VDS=0V uA nA -1.7 -3 36 45 V m ohm VGS=-4.5V , ID=-4.3A 52 70 m ohm VDS=-10V , ID=-5.3A 12 S 980 135 90 pF pF pF VDD=-20V ID=-1A VGS=-10V RGEN=3.3 ohm 12 17 ns ns ns ns VDS=-20V,ID=-5.3A,VGS=-10V 20.7 nC VDS=-20V,ID=-4.3A,VGS=-4.5V 11 1.5 nC VDS=VGS , ID=-250uA VGS=-10V , ID=-5.3A -1 Units c SWITCHING CHARACTERISTICS tD(ON) Turn-On Delay Time tr Rise Time tD(OFF) Turn-Off Delay Time tf Fall Time Total Gate Charge Max V VDS=-32V , VGS=0V Input Capacitance Output Capacitance Reverse Transfer Capacitance Qg Typ VDS=-20V,VGS=0V f=1.0MHz c VDS=-20V,ID=-5.3A, VGS=-10V 82 35 nC nC 6.2 DRAIN-SOURCE DIODE CHARACTERISTICS VSD Diode Forward Voltage b VGS=0V,IS=-1.3A -0.78 -1.2 V Notes _ 10sec. a.Surface Mounted on FR4 Board,t < _ 2%. _ 300us, Duty Cycle < b.Pulse Test:Pulse Width < c.Guaranteed by design, not subject to production testing. d.Starting TJ=25°C,VDD = 20V,Vgs=10V,L=0.5mH. May,29,2008 3 www.samhop.com.tw STM8456 Ver 1.0 N-Channel 40 20 V G S =10V V G S =4.5V V G S =4V I D, Drain Current(A) I D, Drain Current(A) 32 V G S =3.5V 24 16 V G S =3V 8 V G S =2.5V 16 -55 C 8 0 0.5 1 2 1.5 2.5 25 C 4 0 0 T j =125 C 12 3 0 V DS, Drain-to-Source Voltage(V) 60 1.4 R DS(on), On-Resistance Normalized RDS(on)(m Ω) 1.5 V G S =4.5V 36 V G S =10V 12 0 1 8 16 24 32 3.2 4.0 4.8 V G S =4.5V I D =5.3A 1.3 1.2 V G S =10V I D =6.2A 1.1 1.0 0.0 40 0 50 25 75 100 125 150 T j ( °C ) ID, Drain Current(A) Tj, Junction Temperature(° C ) Figure 3. On-Resistance vs. Drain Current and Gate Voltage Figure 4. On-Resistance Variation with Drain Current and Temperature BVDSS, Normalized Drain-Source Breakdown Voltage 1.2 Vth, Normalized Gate-Source Threshold Voltage 2.4 Figure 2. Transfer Characteristics 72 24 1.6 VGS, Gate-to-Source Voltage(V) Figure 1. Output Characteristics 48 0.8 V DS =V G S I D =250uA 1.1 1.0 0.9 0.8 0.7 0.6 0.5 -50 -25 0 25 50 75 100 125 150 Tj, Junction Temperature( ° C ) 1.15 I D =250uA 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 0 25 50 75 100 125 150 Tj, Junction Temperature(° C ) Figure 5. Gate Threshold Variation with Temperature Figure 6. Breakdown Voltage Variation with Temperature May,29,2008 4 www.samhop.com.tw STM8456 Ver 1.0 20.0 84 Is, Source-drain current(A) I D =6.2A RDS(on)(m Ω) 70 56 125 C 42 28 25 C 75 C 14 0 0 2 4 6 8 125 C 75 C 1.0 25 C 0.1 10 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 V GS, Gate-to-Source Voltage(V) V SD, Body Diode Forward Voltage(V) Figure 7. On-Resistance vs. Gate-Source Voltage Figure 8. Body Diode Forward Voltage Variation with Source Current 1200 V GS, Gate to Source Voltage(V) 10 1000 C, Capacitance(pF) 10.0 800 C is s 600 400 C os s 200 C rs s 0 0 5 10 15 20 25 V DS =20V I D =6.2A 8 6 4 2 0 30 0 2 6 4 8 10 12 14 16 V DS, Drain-to-Source Voltage(V) Qg, Total Gate Charge(nC) Figure 9. Capacitance Figure 10. Gate Charge 100 60 T D(off) I D, Drain Current(A) Switching Time(ns) 200 Tr Tf T D(on) 10 V DS =20V ,ID=1A 1 6 10 RD 60 100 300 600 L im 10 it 10 1m 1 0m 0u us s s s DC V G S =10V S ingle P ulse T c=25 C 0.1 Rg, Gate Resistance(Ω) S( ) ON 10 0.1 0.05 V G S =10V 1 10 1 10 100 V DS, Drain-Source Voltage(V) Figure 11. switching characteristics Figure 12. Maximum Safe Operating Area May,29,2008 5 www.samhop.com.tw STM8456 Ver 1.0 V ( BR )D S S 15V tp D R IVE R L VDS D .U .T RG + - VD D IA S A 20V tp 0.0 1 IAS Unclamped Inductive Test Circuit Unclamped Inductive Waveforms F igure 13a. F igure 13b. Normalized Transient Thermal Resistance 10 1 0.5 0.2 0.1 0.1 P DM 0.05 t1 t2 0.02 0.01 0.00001 1. 2. 3. 4. Single Pulse 0.01 0.0001 0.001 0.01 0.1 1 Square Wave Pulse Duration(sec) Normalized Thermal Transient Impedance Curve 10 R įJ A (t)=r (t) * R įJ A R įJ A =S ee Datas heet T J M-T A = P DM* R įJ A (t) Duty C ycle, D=t1/t2 100 1000 May,29,2008 6 www.samhop.com.tw STM8456 Ver 1.0 P-Channel 25 20 V G S =-4V 25 C -55 C I D, Drain Current(A) I D, Drain Current(A) V G S =-4.5V 20 V G S =-8V 15 V G S =-10V V G S =-3V 10 5 0 0 16 12 8 T j=125 C 4 0 0.5 1 2 1.5 2.5 0 3 V DS, Drain-to-Source Voltage(V) 100 1.4 R DS(on), On-Resistance Normalized RDS(on)(m Ω) 1.5 80 V G S =-4.5V 40 V G S =-10V 20 1 5 10 15 20 2.4 3.2 4.0 4.8 Figure 2. Transfer Characteristics 120 0 1.6 VGS, Gate-to-Source Voltage(V) Figure 1. Output Characteristics 60 0.8 1.3 1.2 V G S =-4.5V I D =-4.3A 1.1 1.0 0.0 25 V G S =-10V I D =-5.3A 0 25 75 50 100 125 150 T j ( °C ) ID, Drain Current(A) Tj, Junction Temperature(° C ) Figure 3. On-Resistance vs. Drain Current and Gate Voltage Figure 4. On-Resistance Variation with Drain Current and Temperature BVDSS, Normalized Drain-Source Breakdown Voltage Vth, Normalized Gate-Source Threshold Voltage 1.3 V DS =V G S I D =-250uA 1.2 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 150 Tj, Junction Temperature( ° C ) 1.15 I D =-250uA 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 0 25 50 75 100 125 150 Tj, Junction Temperature(° C ) Figure 5. Gate Threshold Variation with Temperature Figure 6. Breakdown Voltage Variation with Temperature May,29,2008 7 www.samhop.com.tw STM8456 Ver 1.0 20.0 120 Is, Source-drain current(A) I D =-5.3A R DS(on)(m Ω) 100 80 125 C 75 C 60 25 C 40 20 0 0 2 4 6 8 125 C 75 C 1.0 25 C 0.1 0.2 10 0.4 0.6 0.8 1.0 1.2 1.4 V GS, Gate-to-Source Voltage(V) V SD, Body Diode Forward Voltage(V) Figure 7. On-Resistance vs. Gate-Source Voltage Figure 8. Body Diode Forward Voltage Variation with Source Current 1200 V GS, Gate to Source Voltage(V) 10 C is s 1000 C, Capacitance(pF) 10.0 800 600 400 C os s 200 C rs s 0 0 5 10 15 20 25 V DS =-20V I D =-5.3A 8 6 4 2 0 30 0 3 9 6 12 15 18 21 24 V DS, Drain-to-Source Voltage(V) Qg, Total Gate Charge(nC) Figure 9. Capacitance Figure 10. Gate Charge 400 T D(off) I D, Drain Current(A) Switching Time(ns) Tr 100 60 Tf T D(on) 10 V DS =-20V ,ID=-1A 1 6 10 R 60 100 300 600 L im it 10 10 1m 1 DC 0m 0u us s s s V G S =10V S ingle P ulse T c=25 C 0.1 Rg, Gate Resistance(Ω) D S( ) ON 10 0.1 0.05 V G S =-10V 1 10 1 10 100 V DS, Drain-Source Voltage(V) Figure 12. Maximum Safe Operating Area Figure 11. switching characteristics May,29,2008 8 www.samhop.com.tw STM8456 Ver 1.0 V ( BR )D S S 15V tp D R IVE R L VDS D .U .T RG + - VD D IA S A 20V tp 0.0 1 IAS Unclamped Inductive Test Circuit Unclamped Inductive Waveforms F igure 13a. F igure 13b. Normalized Transient Thermal Resistance 10 0.5 1 0.2 0.1 P DM 0.05 0.1 t1 t2 0.02 1. RthJA (t)=r (t) * R th JA 2. R thJA=See Datasheet 3. TJM-TA = PDM* R thJA (t) 4. Duty Cycle, D=t1/t2 0.01 Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 Square Wave Pulse Duration(sec) Normalized Thermal Transient Impedance Curve 10 100 1000 May,29,2008 9 www.samhop.com.tw STM8456 Ver 1.0 PACKAGE OUTLINE DIMENSIONS SO-8 1 L E D A C 0.015X45± B A1 e 0.008 TYP. 0.016 TYP. 0.05 TYP. H MILLIME T E R S INC HE S S Y MB OLS MIN A A1 D E H L 1.35 0.10 4.80 3.81 5.79 0.41 0± MAX 1.75 0.25 4.98 3.99 6.20 1.27 8± MIN 0.053 0.004 0.189 0.150 0.228 0.016 0± MAX 0.069 0.010 0.196 0.157 0.244 0.050 8± May,29,2008 10 www.samhop.com.tw STM8456 Ver 1.0 SO-8 Tape and Reel Data SO-8 Carrier Tape P1 D1 P2 B0 E E2 E1 A A0 A P0 D0 TERMINAL NUMBER 1 T SECTION A-A K0 FEEDING DIRECTION unit:р PACKAGE A0 SOP 8N 150п 6.50 ²0.15 B0 K0 D0 D1 E 5.25 ²0.10 2.10 ²0.10 ӿ1.5 (MIN) ӿ1.55 ²0.10 12.0 +0.3 - 0.1 E1 1.75 ²0.10 E2 P0 P1 P2 T 5.5 ²0.10 8.0 ²0.10 4.0 ²0.10 2.0 ²0.10 0.30 ²0.013 SO-8 Reel W1 S K V M N G R H W UNIT:р TAPE SIZE 12 р REEL SIZE M N W W1 H ӿ330 330 ² 1 62 ²1.5 12.4 + 0.2 16.8 - 0.4 ӿ12.75 + 0.15 K S G R V 2.0 ²0.15 May,29,2008 11 www.samhop.com.tw