STS8235 S a mHop Microelectronics C orp. Ver 1.0 Dual N-Channel Enhancement Mode Field Effect Transistor F E AT UR E S S uper high dense cell design for low R DS (ON ). PRODUCT SUMMARY V DSS R DS(ON) (m Ω) Max ID R ugged and reliable. S urface Mount P ackage. 36 @ VGS=4.5V 30V 4.5A E S D P rotected. 46 @ VGS=2.5V S1 D1/D2 S2 1 2 3 D2 D1 S OT26 Top View 6 G1 5 4 D1/D2 G1 G2 G2 S1 S2 ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage ID IDM Drain Current-Continuous -Pulsed a a Maximum Power Dissipation TJ, TSTG Operating Junction and Storage Temperature Range Units 30 V ±10 V TA=25°C 4.5 A TA=70°C 3.6 18 A A TA=25°C 1.25 A TA=70°C 0.8 W -55 to 150 °C 100 °C/W b PD Limit THERMAL CHARACTERISTICS R JA Thermal Resistance, Junction-to-Ambient a Details are subject to change without notice. Aug,14,2008 1 www.samhop.com.tw STS8235 Ver 1.0 ELECTRICAL CHARACTERISTICS ( T A=25 °C unless otherwise noted ) 4 Symbol Parameter OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS Zero Gate Voltage Drain Current IDSS Gate-Body Leakage Current IGSS ON CHARACTERISTICS Gate Threshold Voltage VGS(th) RDS(ON) Drain-Source On-State Resistance gFS Forward Transconductance DYNAMIC CHARACTERISTICS c Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS c SWITCHING CHARACTERISTICS tD(ON) Turn-On Delay Time tr Rise Time tD(OFF) Turn-Off Delay Time tf Fall Time Qg Total Gate Charge Conditions Min VGS=0V , ID=250uA 30 VGS= ±10V , VDS=0V VDS=VGS , ID=250uA VGS=4.5V , ID=4.5A VSD uA 1 ±10 uA 1.5 36 V m ohm 46 m ohm VGS=2.5V , ID=4A VDS=5V , ID=4.5A 15 S VDS=15V,VGS=0V f=1.0MHz 440 80 56 pF pF pF 10 12.5 ns ns ns ns VDD=15V ID=1A VGS=4.5V RGEN=10 ohm 0.5 15.5 30 VDS=15V,ID=4.5A,VGS=4.5V 6.7 nC VDS=15V,ID=4.5A,VGS=2.5V 4.6 1.5 2.2 nC Maximum Continuous Drain-Source Diode Forward Current Diode Forward Voltage Units 0.7 30 36 Gate-Source Charge VDS=15V,ID=4.5A, VGS=4.5V Gate-Drain Charge DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS b Max V VDS=24V , VGS=0V Qgs Qgd IS Typ VGS=0V,IS=1.25A 0.78 nC nC 1.25 A 1.2 V Notes _ 10sec. a.Surface Mounted on FR4 Board,t < _ 2%. _ 300us, Duty Cycle < b.Pulse Test:Pulse Width < c.Guaranteed by design, not subject to production testing. Aug,14,2008 2 www.samhop.com.tw STS8235 Ver 1.0 15 20 V G S = 4.5V V G S = 2.5V I D, Drain Current(A) I D, Drain Current(A) V G S =2 V 16 12 8 V G S = 1.5V 4 12 9 6 125 C -55 C 3 25 C 0 0 0 2.0 1.5 1.0 0.5 2.5 0 3.0 V DS, Drain-to-Source Voltage(V) 50 1.8 R DS(on), On-Resistance Normalized R DS(on)(m Ω) 2.0 VG S =2.5V 30 VG S =4.5V 20 10 4 1 8 12 16 1.6 2.0 2.4 V G S =2.5V I D =4A 1.6 1.4 V G S =4.5V I D = 4.5A 1.2 1.0 0 20 0 25 50 75 100 125 150 T j ( °C ) ID, Drain Current(A) Tj, Junction Temperature(° C ) Figure 3. On-Resistance vs. Drain Current and Gate Voltage Figure 4. On-Resistance Variation with Drain Current and Temperature BVDSS, Normalized Drain-Source Breakdown Voltage 1.6 Vth, Normalized Gate-Source Threshold Voltage 1.2 Figure 2. Transfer Characteristics 60 1 0.8 VGS, Gate-to-Source Voltage(V) Figure 1. Output Characteristics 40 0.4 V DS =V G S I D =250uA 1.4 1.2 1.0 0.8 0.6 0.4 0.2 -50 -25 0 25 50 75 100 125 150 Tj, Junction Temperature( ° C ) 1.15 I D =250uA 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 0 25 50 75 100 125 150 Tj, Junction Temperature(° C ) Figure 5. Gate Threshold Variation with Temperature Figure 6. Breakdown Voltage Variation with Temperature Aug,14,2008 3 www.samhop.com.tw STS8235 Ver 1.0 90 20.0 Is, Source-drain current(A) I D =4.5A R DS(on)(m Ω) 75 60 45 125 C 30 75 C 25 C 15 0 2 4 6 8 125 C 75 C 10 0 0.3 0.6 0.9 1.2 1.5 V GS, Gate-to-Source Voltage(V) V SD, Body Diode Forward Voltage(V) Figure 7. On-Resistance vs. Gate-Source Voltage Figure 8. Body Diode Forward Voltage Variation with Source Current 10 V GS, Gate to Source Voltage(V) 500 C, Capacitance(pF) 5.0 1.0 0 600 C is s 400 300 200 Cos s C rs s 100 0 0 2 4 6 8 10 V DS = 15V I D =4.5A 8 6 4 2 0 0 12 1 2 4 3 5 7 6 V DS, Drain-to-Source Voltage(V) Qg, Total Gate Charge(nC) Figure 9. Capacitance Figure 10. Gate Charge 600 8 50 10 100 60 I D, Drain Current(A) Switching Time(ns) 25 C 10.0 Tr TD(off) Tf 10 TD(on) V DS =15V ,ID=1A 1 RD 6 10 Rg, Gate Resistance(Ω) it 10 1m 0u s 10 s 1 0 ms 0m s DC 0.1 0.1 60 100 300 600 ( L im 1 V G S =4.5 V 1 S ) ON V G S =4.5V S ingle P ulse T A =25 C 1 10 30 100 VDS, Drain-Source Voltage(V) Figure 12. Maximum Safe Operating Area Figure 11. switching characteristics Aug,14,2008 4 www.samhop.com.tw STS8235 Ver 1.0 V DD ton RL V IN tf 90% 90% D V OUT V OUT VG S R GE N toff td(off) tr td(on) 10% INVE R TE D 10% G 90% V IN S 50% 50% 10% P ULS E WIDTH Figure 14. Switching Waveforms Figure 13. Switching Test Circuit Normalized Transient Thermal Resistance 10 1 0.5 0.2 P DM 0.1 0.1 t1 t2 0.05 0.02 0.01 0.01 0.00001 1. 2. 3. 4. Single Pulse 0.0001 0.001 0.01 0.1 1 R thJ A (t)=r (t) * R thJ A R thJ A =S ee Datas heet T J M-T A = P DM* R thJ A (t) Duty C ycle, D=t1/t2 10 100 1000 Square Wave Pulse Duration(sec) Figure 15. Normalized Thermal Transient Impedance Curve Aug,14,2008 5 www.samhop.com.tw STS8235 Ver 1.0 PACKAGE OUTLINE DIMENSIONS SOT26 Aug,14,2008 6 www.samhop.com.tw STS8235 Ver 1.0 SOT26 Tape and Reel Data SOT26 Carrier Tape SOT26 Reel Aug,14,2008 7 www.samhop.com.tw