Gr Pr STU/D609S S a mHop Microelectronics C orp. Ver 1.1 P-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES Super high dense cell design for low R DS(ON). PRODUCT SUMMARY V DSS ID R DS(ON) (m ) Max Rugged and reliable. 53 @ VGS=-10V -60V TO-252 and TO-251 Package. -20A 80 @ VGS=-4.5V G G D S STU SERIES TO - 252AA( D - PAK ) S STD SERIES TO - 251 ( I - PAK ) ABSOLUTE MAXIMUM RATINGS ( T C=25 °C unless otherwise noted ) Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage ID IDM EAS Drain Current-Continuous Maximum Power Dissipation TJ, TSTG Operating Junction and Storage Temperature Range V ±20 -20 V A TC=70°C -16 A -60 A 156 mJ c PD Units -60 TC=25°C a -Pulsed Sigle Pulse Avalanche Energy Limit TC=25°C 42 W TC=70°C 27 W -55 to 150 °C 3 50 °C/W THERMAL CHARACTERISTICS R JC Thermal Resistance, Junction-to-Case R JA Thermal Resistance, Junction-to-Ambient Details are subject to change without notice. °C/W Jun,22,2012 1 www.samhop.com.tw STU/D609S Ver 1.1 ELECTRICAL CHARACTERISTICS ( T C=25 °C unless otherwise noted ) Conditions Min OFF CHARACTERISTICS BVDSS Drain-Source Breakdown Voltage VGS=0V , ID=-250uA -60 IDSS Zero Gate Voltage Drain Current VDS=-48V , VGS=0V IGSS Gate-Body Leakage Current VGS= ±20V , VDS=0V Symbol Parameter ON CHARACTERISTICS Gate Threshold Voltage VGS(th) RDS(ON) Drain-Source On-State Resistance gFS Forward Transconductance Typ Max Units V 1 ±100 uA nA -2.7 -4 V 42 53 VGS=-4.5V , ID=-8.5A 59 80 m ohm m ohm VDS=-10V , ID=-10A 32 S 2420 144 pF pF pF VDS=VGS , ID=-250uA VGS=-10V , ID=-10A -2 b DYNAMIC CHARACTERISTICS Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING CHARACTERISTICS tD(ON) Turn-On Delay Time tr Rise Time tD(OFF) Turn-Off Delay Time tf Fall Time Qg Total Gate Charge Qgs Qgd Gate-Source Charge VDS=-25V,VGS=0V f=1.0MHz 107 b Gate-Drain Charge ns ns ns ns VDS=-30V,ID=-10A,VGS=-10V 54 33 120 18 43 nC VDS=-30V,ID=-10A,VGS=-4.5V 20 nC VDS=-30V,ID=-10A, VGS=-10V 7 11.2 nC nC VGS=0V,IS= -2A -0.78 VDD=-30V ID=-1.0A VGS=-10V RGEN= 6 ohm DRAIN-SOURCE DIODE CHARACTERISTICS VSD Diode Forward Voltage -1.3 V Notes _ 300us, Duty Cycle < _ 2%. a.Pulse Test:Pulse Width < b.Guaranteed by design, not subject to production testing. c.Starting TJ=25°C,L=0.5mH,VDD = 30V .(See Figure13) Jun,22,2012 2 www.samhop.com.tw STU/D609S Ver 1.1 25 20 VGS = -4.5V 16 -I D, Drain Current(A) -ID, Drain Current(A) VGS = -10V VGS = -5V 12 VGS = -4V 8 4 20 15 T j=125 C 10 25 C -55 C 5 VGS = -3.5V 0 0 0 1.0 0.5 2.0 1.5 2.5 3.0 0 -V DS, Drain-to-Source Voltage(V) 140 2.0 120 1.8 R DS(on), On-Resistance Normalized RDS(on)(m Ω) 4 3 5 6 Figure 2. Transfer Characteristics 100 80 V G S =-4.5V 60 40 V G S =-10V 20 V G S =-10V I D =-10A 1.6 1.4 1.2 V G S =-4.5V I D =-8.5A 1.0 0 1 8 4 12 16 0 20 25 50 75 100 125 150 T j( C ) -I D, Drain Current(A) Tj, Junction Temperature(° C ) Figure 3. On-Resistance vs. Drain Current and Gate Voltage Figure 4. On-Resistance Variation with Drain Current and Temperature BVDSS, Normalized Drain-Source Breakdown Voltage 1.6 Vth, Normalized Gate-Source Threshold Voltage 2 -V GS, Gate-to-Source Voltage(V) Figure 1. Output Characteristics 1 1 V DS =V G S I D =-250uA 1.4 1.2 1.0 0.8 0.6 0.4 0.2 -50 -25 0 25 50 75 100 125 150 Tj, Junction Temperature(° C ) 1.15 1.10 I D =-250uA 1.05 1.00 0.95 0.90 0.85 -50 -25 0 25 50 75 100 125 150 Tj, Junction Temperature(° C ) Figure 5. Gate Threshold Variation with Temperature Figure 6. Breakdown Voltage Variation with Temperature Jun,22,2012 3 www.samhop.com.tw STU/D609S Ver 1.1 20.0 180 -Is, Source-drain current(A) I D = -10A RDS(on)(m Ω) 150 120 90 125 C 60 75 C 30 25 C 125 C 10.0 5.0 75 C 25 C 1.0 0 2 0 4 6 8 10 -V GS, Gate-to-Source Voltage(V) 0.25 0.50 0.75 1.00 1.25 -VSD, Body Diode Forward Voltage(V) Figure 7. On-Resistance vs. Gate-Source Voltage Figure 8. Body Diode Forward Voltage Variation with Source Current 10 -V GS, Gate to Source Voltage(V) 3000 C is s 2500 C, Capacitance(pF) 0 2000 1500 1000 500 Co s s C rs s 0 0 5 10 20 15 25 6 4 2 0 30 V DS = -30V I D = -10A 8 0 6 12 18 24 30 36 42 -V DS, Drain-to-Source Voltage(V) Qg, Total Gate Charge(nC) Figure 9. Capacitance Figure 10. Gate Charge 48 300 100 TD(off ) -ID, Drain Current(A) 100 Switching Time(ns) TD(on) Tr Tf 10 VDS=-30V,ID=-1A VGS=-10V R 10 DS ( ) ON L im it 10 1m 10 0u s s m DC s 1 VGS= -10V Single Pulse TC=25 C 1 1 10 100 0.1 Rg, Gate Resistance(Ω) 1 10 60 -V DS, Drain-Source Voltage(V) Figure 12. Maximum Safe Operating Area Figure 11. switching characteristics Jun,22,2012 4 www.samhop.com.tw STU/D609S Ver 1.1 V ( BR )D S S tp L V DS D .U .T RG + - IA S VDD 20V tp 0.0 1 IAS Unclamped Inductive Test Circuit Unclamped Inductive Waveforms F igure 13a. F igure 13b. 2 1 Normalized Transient Thermal Resistance D=0.5 0.2 0.1 P DM 0.1 0.05 t1 t2 0.02 1. 2. 3. 4. 0.01 S ING LE P ULS E R ӰJ A (t)=r (t) * R ӰJ A R ӰJ A =S ee Datas heet T J M-T A = P DM* R ӰJ A (t) Duty C ycle, D=t1/t2 0.01 10 -5 10 -4 10 -3 10 -2 10 -1 1 10 Square Wave Pulse Duration(sec) Figure 14. Normalized Thermal Transient Impedance Curve Jun,22,2012 5 www.samhop.com.tw STU/D609S Ver 1.1 E TO-252 A b2 C L3 1 D1 D E1 H 1 2 3 DETAIL "A" L4 b1 e b L2 L A1 DETAIL "A" L1 SYMBOLS A A1 b b1 b2 C D D1 E E1 e H L L1 L2 L3 L4 1 MILLIMETERS MIN 2.100 0.000 0.400 0.770 4.800 0.400 5.300 4.900 6.300 4.400 2.290 8.900 1.397 2.743 0.508 0.890 0.500 0° 7° INCHES MAX 2.500 0.200 0.889 1.140 5.460 0.600 6.223 5.515 6.731 5.004 REF 10.400 1.770 REF. REF. 1.700 1.100 10° REF. MIN 0.083 0.000 0.016 0.030 0.189 0.016 0.209 0.193 0.248 0.173 0.090 0.350 0.055 0.108 0.020 0.035 0.020 0° 7° MAX 0.098 0.008 0.035 0.045 0.215 0.024 0.245 0.217 0.265 0.197 BSC 0.409 0.070 REF. REF. 0.067 0.043 10 ° REF. Jun,22,2012 6 www.samhop.com.tw STU/D609S Ver 1.1 TO-252 Tape and Reel Data TO-252 Carrier Tape D1 B0 E E2 T E1 P1 P2 K0 FEED DIRECTION A0 D0 P0 UNIT:р PACKAGE TO-252 (16 р* A0 6.96 ²0.1 B0 10.49 ²0.1 K0 2.79 ²0.1 D0 D1 E E1 E2 P0 P1 P2 T ӿ2 ӿ1.5 + 0.1 - 0 16.0 ²0.3 1.75 ²0.1 7.5 ²0.15 8.0 ²0.1 4.0 ²0.1 2.0 ²0.15 0.3 ²0.05 TO-252 Reel T S M N K G V R H W UNIT:р TAPE SIZE 16 р REEL SIZE M ӿ 330 ӿ330 ² 0.5 N W ӿ97 ² 1.0 17.0 + 1.5 - 0 T H 2.2 ӿ13.0 + 0.5 - 0.2 K S 10.6 2.0 ²0.5 G R V Jun,22,2012 7 www.samhop.com.tw