STU313D S a mHop Microelectronics C orp. Ver 1.0 Dual Enhancement Mode Field Effect Transistor (N and P Channel) PRODUCT SUMMARY (N-Channel) PRODUCT SUMMARY (P-Channel) R DS(ON) (m Ω) Max V DSS ID 30V 16A R DS(ON) (m Ω) Max V DSS ID -30V -15A 24 @ VGS=10V 33 @ VGS=-10V 35 @ VGS=4.5V 52 @ VGS=-4.5V D2 D1 D1/D2 G1 S1 G2 G1 S2 G2 TO-252-4L S1 N-ch S2 P -ch ABSOLUTE MAXIMUM RATINGS ( T C=25 °C unless otherwise noted ) Symbol VDS VGS Parameter Drain-Source Voltage Gate-Source Voltage ID Drain Current-Continuous IDM N-Channel P-Channel 30 -30 ±20 ±20 TC=25°C TC=70°C a b EAS -Pulsed Sigle Pulse Avalanche Current d Sigle Pulse Avalanche Energy d PD Maximum Power Dissipation TJ, TSTG Operating Junction and Storage Temperature Range I AS a L=0.5mH TC=25°C TC=70°C THERMAL CHARACTERISTICS a R JC Thermal Resistance, Junction-to-Case R JA Thermal Resistance, Junction-to-Ambient a Details are subject to change without notice. Units V V 16 -15 A 12.5 -11.5 A 45 -43 7.5 5.0 A A 14 6.3 mJ 10 W 6.5 W -55 to 150 °C 12 60 °C/W °C/W Jul,30,2008 1 www.samhop.com.tw STU313D Ver 1.0 N-Channel ELECTRICAL CHARACTERISTICS ( T C=25 °C unless otherwise noted ) 4 Symbol Parameter Conditions OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS Zero Gate Voltage Drain Current IDSS Gate-Body Leakage Current IGSS ON CHARACTERISTICS Gate Threshold Voltage VGS(th) RDS(ON) Drain-Source On-State Resistance gFS Forward Transconductance DYNAMIC CHARACTERISTICS c Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING CHARACTERISTICS tD(ON) Turn-On Delay Time tr Rise Time tD(OFF) Turn-Off Delay Time tf Fall Time Qg Total Gate Charge Qgs Qgd Gate-Source Charge VGS=0V , ID=250uA Typ 1 ±10 VGS= ±20V , VDS=0V 1 Diode Forward Voltage b 3 Units V uA uA 2 19 24 V m ohm VGS=4.5V , ID=6.5A 26 35 m ohm VDS=5V , ID=8A 14 S VDS=15V,VGS=0V f=1.0MHz 440 130 70 pF pF pF 10 11.5 ns ns ns ns VDS=VGS , ID=250uA VGS=10V , ID=8A c VDD=15V ID=1A VGS=10V RGEN=6 ohm 17 22 VDS=15V,ID=8A,VGS=10V 8.3 nC VDS=15V,ID=8A,VGS=4.5V 4.3 1.4 2.1 nC DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS Maximum Continuous Drain-Source Diode Forward Current IS VSD Max 30 VDS=24V , VGS=0V VDS=15V,ID=8A, VGS=10V Gate-Drain Charge Min VGS=0V,IS=1A 0.77 nC nC 1 1.3 A V Jul,30,2008 2 www.samhop.com.tw STU313D Ver 1.0 P-Channel ELECTRICAL CHARACTERISTICS ( T C=25 °C unless otherwise noted ) Symbol Parameter OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS Zero Gate Voltage Drain Current IDSS Gate-Body Leakage Current IGSS ON CHARACTERISTICS Gate Threshold Voltage VGS(th) RDS(ON) Drain-Source On-State Resistance gFS Forward Transconductance DYNAMIC CHARACTERISTICS CISS COSS CRSS SWITCHING CHARACTERISTICS tD(ON) Turn-On Delay Time tr Rise Time tD(OFF) Turn-Off Delay Time tf Fall Time Total Gate Charge Qgs Qgd Gate-Source Charge Min VGS=0V , ID=-250uA -30 Typ -1 ±10 VDS=-24V , VGS=0V VGS= ±20V , VDS=0V VDS=VGS , ID=-250uA VGS=-10V , ID=-7.5A VGS=-4.5V , ID=-6A VDS=-10V , ID=-7.5A -1 -1.7 26 39 10 VDS=-15V,VGS=0V f=1.0MHz V uA uA 33 V m ohm 52 m ohm S pF pF pF 11.8 18 ns ns ns ns c VDD=-15V ID=-1A VGS=-10V RGEN=6 ohm 65 39 VDS=-15V,ID=-7.5A,VGS=-10V 16 nC VDS=-15V,ID=-7.5A,VGS=-4.5V 7.8 1.6 4.8 nC VDS=-15V,ID=-7.5A, VGS=-10V Gate-Drain Charge Diode Forward Voltage -3 Units 815 225 130 DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS Maximum Continuous Drain-Source Diode Forward Current IS VSD Max c Input Capacitance Output Capacitance Reverse Transfer Capacitance Qg Conditions b VGS=0V,IS=-2A -0.78 nC nC -2 -1.3 A V Notes _ 10sec. a.Surface Mounted on FR4 Board,t < _ 2%. _ 300us, Duty Cycle < b.Pulse Test:Pulse Width < c.Guaranteed by design, not subject to production testing. d.Starting TJ=25°C,L=0.5mH,VDD = 30V.(See Figure13) Jul,30,2008 3 www.samhop.com.tw STU313D Ver 1.0 N-Channel 35 20 VGS=10V VGS=4.5V VGS=5V VGS=4V I D, Drain Current(A) I D, Drain Current(A) 28 21 VGS=3.5V 14 7 VGS=3V 0 16 12 8 25 C 0 0 0.5 1 1.5 2 2.5 3 0 V DS, Drain-to-Source Voltage(V) 50 1.8 R DS(on), On-Resistance Normalized RDS(on)(m Ω) 2.0 40 VGS=4.5V 30 20 VGS=10V 10 2.1 2.8 3.5 4.2 V G S =10V I D =8A 1.6 1.4 1.2 V G S =4.5V I D =6.5A 1.0 0.8 1 7 14 21 28 0 35 Figure 3. On-Resistance vs. Drain Current and Gate Voltage BVDSS, Normalized Drain-Source Breakdown Voltage VDS=VGS ID=250uA 1.1 1.0 0.9 0.8 0.7 -50 -25 0 25 50 75 75 100 125 150 T j ( °C ) Figure 4. On-Resistance Variation with Drain Current and Temperature 1.3 1.2 50 25 Tj, Junction Temperature(° C ) I D, Drain Current(A) Vth, Normalized Gate-Source Threshold Voltage 1.4 Figure 2. Transfer Characteristics 60 0.6 0.7 VGS, Gate-to-Source Voltage(V) Figure 1. Output Characteristics 1 -55 C Tj=125 C 4 100 125 150 Tj, Junction Temperature( ° C ) 1.15 ID=250uA 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 0 25 50 75 100 125 150 Tj, Junction Temperature(° C ) Figure 5. Gate Threshold Variation with Temperature Figure 6. Breakdown Voltage Variation with Temperature Jul,30,2008 4 www.samhop.com.tw STU313D Ver 1.0 60 20.0 Is, Source-drain current(A) ID=8A R DS(on)(m Ω) 50 75 C 40 125 C 30 20 25 C 10 0 0 2 4 6 8 10.0 25 C 1.0 10 0.4 V GS, Gate-to-Source Voltage(V) 1.0 1.2 1.4 10 V GS, Gate to Source Voltage(V) 500 C, Capacitance(pF) 0.8 Figure 8. Body Diode Forward Voltage Variation with Source Current 600 Ciss 400 300 200 Coss 100 Crss 0 0 5 10 15 20 25 30 VDS=15V ID=8A 8 6 4 2 0 0 1 3 2 4 5 6 7 8 V DS, Drain-to-Source Voltage(V) Qg, Total Gate Charge(nC) Figure 9. Capacitance Figure 10. Gate Charge 600 9 100 100 60 I D, Drain Current(A) Switching Time(ns) 0.6 V SD, Body Diode Forward Voltage(V) Figure 7. On-Resistance vs. Gate-Source Voltage Tr TD(off ) TD(on) Tf 10 VDS=15V,ID=1A 10 1 6 10 60 100 Rg, Gate Resistance(Ω) )L im it 10 DC 1m m 0u s s s 1 0.1 0.1 300 600 RD ON S( 10 VGS=10V 1 75 C 125 C V G S =10V S ingle P ulse T c=25 C 1 10 100 VDS, Drain-Source Voltage(V) Figure 12. Maximum Safe Operating Area Figure 11. switching characteristics Jul,30,2008 5 www.samhop.com.tw STU313D Ver 1.0 V ( BR )D S S 15V tp D R IVE R L VDS D .U .T RG + - VD D IA S A 20V tp 0.0 1 IAS Unclamped Inductive Test Circuit Unclamped Inductive Waveforms F igure 13a. F igure 13b. 2 1 Normalized Transient Thermal Resistance D=0.5 0.2 0.1 0.1 0.05 P DM 0.02 t1 t2 0.01 1. 2. 3. 4. S ING LE P ULS E 0.01 0.00001 0.0001 0.001 0.01 R įJ A (t)=r (t) * R įJ A R įJ A =S ee Datas heet T J M-T A = P DM* R įJ A (t) Duty C ycle, D=t1/t2 0.1 1 10 Square Wave Pulse Duration(sec) Figure 14. Normalized Thermal Transient Impedance Curve Jul,30,2008 6 www.samhop.com.tw STU313D Ver 1.0 P-Channel 30 20 V G S =-4.5V V G S =-5V 24 -I D, Drain Current(A) -I D, Drain Current(A) V G S =-10V V G S =-4V 18 V G S =-3.5V 12 6 16 12 8 T j=125 C -55 C 25 C 4 V G S =-3V 0 0 0 0.5 1 2.5 2 1.5 3 0 -V DS, Drain-to-Source Voltage(V) 100 1.4 R DS(on), On-Resistance Normalized RDS(on)(m Ω) 1.5 80 60 V G S =-4.5V 40 V G S =-10V 6 12 18 24 3.2 4.0 4.8 V G S =-10V I D =-7.5A 1.3 1.2 1.1 V G S =-4.5V I D =-6A 1.0 0.8 1 2.4 Figure 2. Transfer Characteristics 120 0 1.6 -V GS, Gate-to-Source Voltage(V) Figure 1. Output Characteristics 20 0.8 30 0 25 50 75 100 125 150 T j ( °C ) -ID, Drain Current(A) Tj, Junction Temperature(° C ) Figure 3. On-Resistance vs. Drain Current and Gate Voltage Figure 4. On-Resistance Variation with Drain Current and Temperature -BVDSS, Normalized Drain-Source Breakdown Voltage -Vth, Normalized Gate-Source Threshold Voltage 1.3 V DS =V G S I D =-250uA 1.2 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 150 Tj, Junction Temperature( ° C ) 1.15 I D =-250uA 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 0 25 50 75 100 125 150 Tj, Junction Temperature(° C ) Figure 5. Gate Threshold Variation with Temperature Figure 6. Breakdown Voltage Variation with Temperature Jul,30,2008 7 www.samhop.com.tw STU313D Ver 1.0 120 20.0 -Is, Source-drain current(A) I D =-7.5A R DS(on)(m Ω) 100 80 75 C 60 125 C 40 25 C 20 0 0 2 4 6 8 25 C 125 C 1.0 0.4 10 1.0 1.2 1.4 Figure 7. On-Resistance vs. Gate-Source Voltage Figure 8. Body Diode Forward Voltage Variation with Source Current 10 -V GS, Gate to Source Voltage(V) C is s 800 600 400 C os s 200 C rs s 0 0 5 10 15 20 25 30 V DS =-15V I D =-20A 8 6 4 2 0 0 2 6 4 -V DS, Drain-to-Source Voltage(V) 8 10 12 14 16 Qg, Total Gate Charge(nC) Figure 9. Capacitance Figure 10. Gate Charge 100 600 100 60 TD(off ) -ID, Drain Current(A) Tr Switching Time(ns) 0.8 0.6 -VSD, Body Diode Forward Voltage(V) 1000 Tf TD(on) 10 VDS=-15V,ID=-1A 10 R 1 6 10 60 100 it 10 1m 0u s s V G S =10V S ingle P ulse T c=25 C 0.1 Rg, Gate Resistance(Ω) (O im 1 0.1 300 600 DS L N) 10 m DC s VGS=10V 1 75 C -V GS, Gate-to-Source Voltage(V) 1200 C, Capacitance(pF) 10.0 1 10 100 -VDS, Drain-Source Voltage(V) Figure 12. Maximum Safe Operating Area Figure 11. switching characteristics Jul,30,2008 8 www.samhop.com.tw STU313D Ver 1.0 V ( BR )D S S 15V tp D R IVE R L VDS D .U .T RG + - VD D IA S A 20V tp 0.0 1 IAS Unclamped Inductive Test Circuit Unclamped Inductive Waveforms F igure 13a. F igure 13b. 2 1 Normalized Transient Thermal Resistance D=0.5 0.2 0.1 0.1 0.05 P DM t1 0.02 t2 0.01 1. 2. 3. 4. S ING LE P ULS E 0.01 0.00001 0.0001 0.001 0.01 R įJ A (t)=r (t) * R įJ A R įJ A =S ee Datas heet T J M-T A = P DM* R įJ A (t) Duty C ycle, D=t1/t2 0.1 1 10 Square Wave Pulse Duration(sec) Figure 14. Normalized Thermal Transient Impedance Curve Jul,30,2008 9 www.samhop.com.tw STU313D Ver 1.0 PACKAGE OUTLINE DIMENSIONS E TO-252-4L A b2 C L3 1 D1 D E1 H 1 2 3 4 5 DETAIL "A" L4 b1 e b L2 L A1 DETAIL "A" L1 SYMBOLS A A1 b b1 b2 C D D1 E E1 e H L L1 L2 L3 L4 1 MILLIMETERS MIN 2.200 0.000 0.440 0.635 5.210 0.450 6.000 5.200 6.400 4.400 1.270 9.400 1.397 2.743 0.508 0.890 0.640 0° 7° INCHES MAX 2.387 0.127 0.680 0.787 5.460 0.584 6.223 5.515 6.731 5.004 BSC 10.400 1.770 REF. REF. 1.270 1.010 10 ° REF. MIN 0.087 0.000 0.017 0.025 0.205 0.018 0.236 0.205 0.252 0.173 0.050 0.370 0.055 0.108 0.020 0.035 0.025 0° 7° MAX 0.094 0.005 0.027 0.031 0.215 0.023 0.245 0.217 0.265 0.197 BSC 0.409 0.070 REF. REF. 0.050 0.040 10° REF. Jul,30,2008 10 www.samhop.com.tw STU313D Ver 1.0 TO-252-4L Tape and Reel Data TO-252-4L Carrier Tape K0 T 6 °Max B0 A0 SECTION A-A P1 P2 E E2 D1 SECTION B-B E1 B 4 ° Max A D0 P0 FEED DIRECTION B A UNIT:р PACKAGE TO-252 (16 р* A0 B0 K0 6.96 ²0.1 10.49 ²0.1 2.79 ²0.1 D0 D1 E ӿ2 ӿ1.5 + 0.1 - 0 16.0 ²0.3 TO-252-4L Reel E1 E2 P0 P1 P2 T 1.75 ²0.1 7.5 ²0.15 8.0 ²0.1 4.0 ²0.1 2.0 ²0.15 0.3 ²0.05 T S M N K G V R H W UNIT:р TAPE SIZE 16 р REEL SIZE ӿ 330 M ӿ330 ² 0.5 N ӿ97 ² 1.0 W 17.0 + 1.5 - 0 T H 2.2 ӿ13.0 + 0.5 - 0.2 K S 10.6 2.0 ²0.5 G R V Jul,30,2008 11 www.samhop.com.tw