STM4635 S a mHop Microelectronics C orp. Ver 1.0 P-Channel Enhancement Mode Field Effect Transistor FEATURES Super high dense cell design for low R DS(ON). PRODUCT SUMMARY V DSS ID R DS(ON) (m Ω) Max Rugged and reliable. 33 @ VGS=-10V -40V Suface Mount Package. -7A 50 @ VGS=-4.5V ESD Procteced S O-8 1 D 5 4 G D 6 3 S D 7 2 S D 8 1 S ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol VDS Limit VGS Parameter Drain-Source Voltage Gate-Source Voltage ID Drain Current-Continuous IDM E AS -Pulsed Single Pulse Avalanche Energy d PD Maximum Power Dissipation TJ, TSTG Operating Junction and Storage Temperature Range -40 35 V A A A mJ 2.5 1.6 W W -55 to 150 °C 50 °C/W ±20 TA=25°C TA=70°C a b a TA=25°C TA=70°C THERMAL CHARACTERISTICS R JA Thermal Resistance, Junction-to-Ambient a Details are subject to change without notice. Units V -7 -5.6 -39 Aug,15,2008 1 www.samhop.com.tw STM4635 Ver 1.0 ELECTRICAL CHARACTERISTICS ( T A=25 °C unless otherwise noted ) 4 Symbol Parameter Max Units Conditions Min OFF CHARACTERISTICS BVDSS Drain-Source Breakdown Voltage VGS=0V , ID=-250uA -40 IDSS Zero Gate Voltage Drain Current VDS= -32V , VGS=0V -1 uA IGSS Gate-Body Leakage Current VGS= ±20V , VDS=0V ±10 nA -1.6 27 -3.0 33 V m ohm 38 9.5 50 m ohm ON CHARACTERISTICS VGS(th) Gate Threshold Voltage RDS(ON) Drain-Source On-State Resistance gFS Forward Transconductance VDS=VGS , ID=-250uA VGS=-10V , ID=-7A VGS=-4.5V , ID=-5.7A VDS=-20V , ID=-7A -1.0 Typ V S c DYNAMIC CHARACTERISTICS Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING CHARACTERISTICS tD(ON) Turn-On Delay Time tr Rise Time tD(OFF) Turn-Off Delay Time tf Fall Time Qg Total Gate Charge Qgs Qgd Gate-Source Charge Gate-Drain Charge VDS=-20V,VGS=0V f=1.0MHz 935 192 105 pF pF pF 7 16 99 ns ns ns ns c VDD=-20V ID=-1A VGS=-10V RGEN=6 ohm VDS=-20V,ID=-7A,VGS=-10V 18 17 nC VDS=-20V,ID=-7A,VGS=-4.5V 8 nC 1.4 4.6 nC nC VDS=-20V,ID=-7A, VGS=-20V DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS IS Maximum Continuous Drain-Source Diode Forward Current Diode Forward Voltage b VGS=0V,IS=-1.7A VSD -1.7 -0.75 -1.2 A V Notes _ a.Surface Mounted on FR4 Board, t <10sec. _ _ 2%. b.Pulse Test:Pulse Width<300us, Duty Cycle< c.Guaranteed by design, not subject to production testing. d.Starting TJ=25°C,L=1.25mH,RG=25Ω,VDD=20V,VGS=10V.(See Figure13) Aug,15,2008 2 www.samhop.com.tw STM4635 Ver 1.0 30 15 VG S =-10V VG S =-4.5V VG S =-4V 12 VG S =-3.5V -ID, Drain Current (A) - ID, Drain Current(A) 24 18 12 VG S =-3V 6 VG S =-2.5V 0 9 Tj=125 C 6 25 C 3 0 0 0.5 1 2 1.5 3 2.5 0 0.6 -VDS, Drain-to-Source Voltage (V) 3.0 3.6 1.8 RDS(ON), On-Resistance Normalized 50 VG S =-4.5V RDS(on) (m Ω ) 2.4 Figure 2. Transfer Characteristics 60 40 30 VG S =-10V 20 1.6 V G S =-10V I D =-7A 1.4 V G S =-4.5V I D =-5.7A 1.2 1.0 10 0.8 1 6 12 18 24 30 0 1.2 1.0 0.8 0.6 0.4 0.2 -50 -25 0 25 50 75 100 125 150 Figure 4. On-Resistance Variation with Drain Current and Temperature BVDSS, Normalized Drain-Source Breakdown Voltage V DS =V G S I D =-250uA 1.4 75 Tj, Junction Temperature ( C) Figure 3. On-Resistance vs. Drain Current and Gate Voltage 1.6 50 25 Tj( C) -ID, Drain Current (A) Vth, Normalized Gate-Source Threshold Voltage 1.8 -V G S , G ate-to-S ource Voltage (V ) Figure 1. Output Characteristics 0 1.2 1.15 1.05 1.00 0.95 0.90 0.85 -50 100 125 150 I D =-250uA 1.10 -25 0 25 50 75 100 125 150 Tj, Junction Temperature ( C) Tj, Junction Temperature ( C) Figure 6. Breakdown Voltage Variation with Temperature Figure 5. Gate Threshold Variation with Temperature Aug,15,2008 3 www.samhop.com.tw STM4635 Ver 1.0 90 20.0 I D =-7A 15.0 -Is, Source-drain current (A) 75 RDS(on) (m Ω ) 60 125 C 45 75 C 30 25 C 15 0 0 2 4 6 8 10.0 5.0 25 C 125 C 1.0 10 0 -VGS, Gate-Source Voltage (V) 0.72 0.96 1.2 Figure 8. Body Diode Forward Voltage Variation with Source Current 10 -VGS, Gate to Source Voltage (V) 1500 1250 C is s 1000 750 500 C os s 250 C rs s 0 V DS =-20V I D =-7 A 8 6 4 2 0 0 5 10 15 20 30 25 0 9 6 3 -VDS, Drain-to Source Voltage (V) 12 15 18 21 24 Qg, Total Gate Charge (nC) Figure 10. Gate Charge Figure 9. Capacitance 1000 100 T D(off) 100 60 - ID, Drain Current (A) Switching Time (ns) 0.48 -VSD, Body Diode Forward Voltage (V) Figure 7. On-Resistance vs. Gate-Source Voltage C, Capacitance (pF) 0.24 75 C Tf Tr T D(on) 10 VDS=-20V,ID=-1A VGS=-10V 1 1 6 10 10 Rg, Gate Resistance ( Ω ) N) L im it 10 10 10 1s 1 0.1 0.1 60 100 300 600 R (O DS 0m 1m 0m s s ms s DC V G S =-10V S ingle P ulse T A =25 C 1 10 40 100 -VDS, Drain-Source Voltage (V) Figure 12. Maximum Safe Operating Area Figure 11.switching characteristics Aug,15,2008 4 www.samhop.com.tw STM4635 Ver 1.0 V ( BR )D S S 15V tp D R IVE R L VDS D .U .T RG + - VD D IA S A 20V tp 0.0 1 IAS Unclamped Inductive Test Circuit Unclamped Inductive Waveforms F igure 13a. F igure 13b. Normalized Transient Thermal Resistance 1 0.5 0.2 0.1 0.1 0.05 0.02 0.01 P DM 0.01 t1 t2 Single Pulse 0.001 0.00001 0.0001 0.001 1. 2. 3. 4. 0.01 0.1 1 R thJ A (t)=r (t) * R thJ A R thJ A =S ee Datas heet T J M-T A = P DM* R thJ A (t ) Duty C ycle, D=t1/t 2 10 100 1000 Square Wave Pulse Duration(sec) Figure 14. Normalized Thermal Transient Impedance Curve Aug,15,2008 5 www.samhop.com.tw STM4635 Ver 1.0 PACKAGE OUTLINE DIMENSIONS SO-8 1 L E D A C 0.015X45± B A1 e 0.008 TYP. 0.016 TYP. 0.05 TYP. H MILLIME T E R S INC HE S S Y MB OLS MIN A A1 D E H L 1.35 0.10 4.80 3.81 5.79 0.41 0± MAX 1.75 0.25 4.98 3.99 6.20 1.27 8± MIN 0.053 0.004 0.189 0.150 0.228 0.016 0± MAX 0.069 0.010 0.196 0.157 0.244 0.050 8± Aug,15,2008 6 www.samhop.com.tw STM4635 Ver 1.0 SO-8 Tape and Reel Data SO-8 Carrier Tape unit:р PACKAGE SOP 8N 150п A0 E1 E2 12.0 ²0.3 1.75 5.5 ²0.05 W W1 H K 12.4 + 0.2 16.8 - 0.4 ӿ12.75 + 0.15 D0 D1 E 2.10 ӿ1.5 (MIN) ӿ1.5 + 0.1 - 0.0 REEL SIZE M N ӿ330 330 ² 1 62 ²1.5 6.40 B0 5.20 K0 P1 P2 T 8.0 4.0 2.0 ²0.05 0.3 ²0.05 S G R V P0 SO-8 Reel UNIT:р TAPE SIZE 12 р 2.0 ²0.15 Aug,15,2008 7 www.samhop.com.tw