Transys Electronics L I M I T E D SOT-23-3L Plastic-Encapsulated Transistors 2SB624 TRANSISTOR (PNP) SOT-23-3L FEATURES 1. BASE Power dissipation 3. COLLECTOR W (Tamb=25℃) 2. 80¡ À0. 05 0. 95¡ À0. 025 Collector current -0.7 A ICM: Collector-base voltage -30 V V(BR)CBO: Operating and storage junction temperature range 0. 35 1. 9 1. 60¡ À0. 05 2. 92¡ À0. 05 0.2 1. 02 PCM: 2. EMITTER TJ, Tstg: -55℃ to +150℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ Parameter Symbol unless otherwise specified) Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO Ic=-100µA, IE=0 -30 V Collector-emitter breakdown voltage V(BR)CEO Ic= -1 mA, IB=0 -25 V Emitter-base breakdown voltage V(BR)EBO IE= -100 µA, IC=0 -5 V Collector cut-off current ICBO VCB=-30 V , IE=0 -0.1 µA Emitter cut-off current IEBO VEB= -5V , -0.1 µA IC=0 hFE(1)* VCE= -1V, IC= -100mA 110 hFE(2)* VCE=-1V, IC= -700mA 50 Collector-emitter saturation voltage VCE(sat) * IC=-700 mA, IB= -70mA Base-emitter voltage VBE(on) * VCE=-6V, IC=-10mA -0.6 Transition frequency fT VCE= -6V, IC= -10mA 140 400 DC current gain -0.6 V -0.7 V MHz * Pulse test : Pulse width ≤350µs,Duty Cycle≤2%. CLASSIFICATION OF hFE(1) Marking Range BV1 BV2 BV3 BV4 BV5 110-180 135-220 170-270 200-320 250-400