ABB 5SMX12L2511

VCE
IC
=
=
2500 V
54 A
IGBT-Die
5SMX 12L2511
Die size: 12.4 x 12.4 mm
Doc. No. 5SYA1640-00 Mar 07
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Low loss, rugged SPT technology
Smooth switching for good EMC
Emitter metallisation optimized for press-pack packaging
Passivation: SIPOS and Silicon Nitride
Maximum rated values
Parameter
Collector-emitter voltage
Symbol Conditions
VCES
DC collector current
IC
Peak collector current
ICM
Gate-emitter voltage
1)
1)
VGE = 0 V
Limited by Tvjmax
VGES
IGBT short circuit SOA
tpsc
Junction temperature
Tvj
min
-20
VCC = 2000 V, VCEM ≤ 2500 V
VGE ≤ 15 V, Tvj ≤ 125 °C
Maximum rated values indicate limits beyond which damage to the device may occur per IEC 60747 - 9
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
-40
max
Unit
2500
V
54
A
108
A
20
V
10
µs
125
°C
5SMX 12L2511
IGBT characteristic values
2)
Parameter
Symbol Conditions
min
Collector (-emitter)
breakdown voltage
V(BR)CES
2500
Collector-emitter
saturation voltage
VCE sat
VGE = 0 V, IC = 1 mA, Tvj = 25 °C
IC = 54 A, VGE = 15 V
Tvj = 125 °C
2.7
V
Tvj = 25 °C
Gate leakage current
IGES
VCE = 0 V, VGE = ±20 V, Tvj = 125 °C
Qge
Input capacitance
Cies
V
V
VCE = 2500 V, VGE = 0 V
Gate charge
100
Tvj = 125 °C
IC = 10 mA, VCE = VGE, Tvj = 25 °C
1000
nA
5
7.5
V
IC = 54 A, VCE = 1250 V, VGE = -15 ..15 V
480
Cres
0.14
Internal gate resistance
RGint
5
Turn-on delay time
td(on)
td(off)
Fall time
Turn-on switching energy
Turn-off switching energy
Short circuit current
2)
tf
Eon
Eoff
ISC
nC
6.7
VCE = 25 V, VGE = 0 V, f = 1 MHz,
Tvj = 25 °C
Reverse transfer capacitance
Turn-off delay time
µA
500
Coes
tr
µA
-500
Output capacitance
Rise time
Unit
2.2
ICES
VGE(TO)
max
Tvj = 25 °C
Collector cut-off current
Gate-emitter threshold voltage
typ
0.43
VCC = 1250 V, IC = 54 A,
RG = 33 Ω, VGE = ±15 V,
Lσ = 2400 nH,
inductive load
Tvj = 25 °C
350
Tvj = 125 °C
350
Tvj = 25 °C
280
Tvj = 125 °C
280
VCC = 1250 V, IC = 54 A,
RG = 33 Ω, VGE = ±15 V,
Lσ = 2400 nH,
inductive load
Tvj = 25 °C
810
Tvj = 125 °C
910
Tvj = 25 °C
370
Tvj = 125 °C
430
Tvj = 25 °C
36
VCC = 1250 V, IC = 54 A,
VGE = ±15 V, RG = 33 Ω,
Lσ = 2400 nH,
inductive load,
FWD: ½ 5SLX12L2507
VCC = 1250 V, IC = 54 A,
VGE = ±15 V, RG = 33 Ω,
Lσ = 2400 nH,
inductive load
nF
Ω
ns
ns
ns
ns
mJ
Tvj = 125 °C
48
Tvj = 25 °C
68
mJ
Tvj = 125 °C
tpsc ≤ 10 μs, VGE = 15 V, Tvj = 125 °C,
VCC = 2000 V, VCEM ≤ 2500 V
85
250
A
Characteristic values according to IEC 60747 - 9
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1640-00 Mar 07
page 2 of 5
5SMX 12L2511
Mechanical properties
Parameter
Unit
Overall die L x W
exposed
L x W (except gate pad)
front metal
Dimensions
gate pad
LxW
thickness
Metallization
3)
3)
12.4 x 12.4
mm
9.0 x 9.0
mm
1.46 x 1.61
mm
310 ± 20
µm
front (E)
AlSi1 + TiNiAg
4+4
µm
back (C)
AlSi1 + TiNiAg
1.8 + 1.2
µm
For assembly instructions refer to : IGBT and Diode chips from ABB Switzerland Ltd, Semiconductors, Doc. No. 5SYA 2033.
1.61±0.05
+0.04
1.90-0
+0.04
9.00 -0
12.38 ±0.05
10.67
Outline drawing
Note: all dimensions are shown in mm
This is an electrostatic sensitive device, please observe the international standard IEC 60747-1, Chap. IX.
This product has been designed and qualified for Industrial Level.
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1640-00 Mar 07
page 3 of 5
5SMX 12L2511
162
162
VCE = 20 V
135
135
25 °C
108
108
IC [A]
IC [A]
125 °C
81
81
54
54
27
27
125 °C
25 °C
VGE = 15 V
0
0
0
1
2
3
4
5
6
7
0
2
4
VCE [V]
Fig. 1
8
10
Typical on-state characteristics
Fig. 2
14
16
Typical transfer characteristics
120
VCC = 1250 V
RG = 33 ohm
VGE = ±15 V
Tvj = 125 °C
Lσ = 2.4 µH
250
E on
100
E off
200
80
E on , E off [mJ]
E off
150
60
40
100
E on
VCC = 1250 V
IC = 54 A
VGE = ±15 V
Tvj = 125 °C
Lσ = 2.4 µH
20
50
E sw [mJ] = 0.94 x 10 -2 x I C2 + 1.36 x I C + 9.77
0
0
0
27
54
81
108
135
0
162
Typical switching characteristics vs
collector current
20
40
60
80
100
120
140
R G [ohm]
IC [A]
Fig. 3
12
VGE [V]
300
E on, E off [mJ]
6
Fig. 4
Typical switching characteristics vs
gate resistor
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1640-00 Mar 07
page 4 of 5
5SMX 12L2511
20
10
C ies
VCC = 1250 V
15
C [nF]
V GE [V]
VCC = 1800 V
10
1
C oes
C res
5
VGE = 0 V
f osc = 1 MHz
Vosc = 50 mV
IC = 54 A
Tvj = 25 °C
0
0.1
0.00
Fig. 5
0.10
0.20
0.30
Q g [µC]
0.40
Typical gate charge characteristics
0.50
0
Fig. 6
5
10
15
20
VCE [V]
25
30
35
Typical capacitances vs
collector-emitter voltage
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
ABB Switzerland Ltd
Semiconductors
Fabrikstrasse 3
CH-5600 Lenzburg, Switzerland
Telephone
Fax
Email
Internet
+41 (0)58 586 1419
+41 (0)58 586 1306
abbsem@ch.abb.com
www.abb.com/semiconductors
Doc. No. 5SYA1640-00 Mar 07