VCE IC = = 2500 V 54 A IGBT-Die 5SMX 12L2511 Die size: 12.4 x 12.4 mm Doc. No. 5SYA1640-00 Mar 07 • • • • Low loss, rugged SPT technology Smooth switching for good EMC Emitter metallisation optimized for press-pack packaging Passivation: SIPOS and Silicon Nitride Maximum rated values Parameter Collector-emitter voltage Symbol Conditions VCES DC collector current IC Peak collector current ICM Gate-emitter voltage 1) 1) VGE = 0 V Limited by Tvjmax VGES IGBT short circuit SOA tpsc Junction temperature Tvj min -20 VCC = 2000 V, VCEM ≤ 2500 V VGE ≤ 15 V, Tvj ≤ 125 °C Maximum rated values indicate limits beyond which damage to the device may occur per IEC 60747 - 9 ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. -40 max Unit 2500 V 54 A 108 A 20 V 10 µs 125 °C 5SMX 12L2511 IGBT characteristic values 2) Parameter Symbol Conditions min Collector (-emitter) breakdown voltage V(BR)CES 2500 Collector-emitter saturation voltage VCE sat VGE = 0 V, IC = 1 mA, Tvj = 25 °C IC = 54 A, VGE = 15 V Tvj = 125 °C 2.7 V Tvj = 25 °C Gate leakage current IGES VCE = 0 V, VGE = ±20 V, Tvj = 125 °C Qge Input capacitance Cies V V VCE = 2500 V, VGE = 0 V Gate charge 100 Tvj = 125 °C IC = 10 mA, VCE = VGE, Tvj = 25 °C 1000 nA 5 7.5 V IC = 54 A, VCE = 1250 V, VGE = -15 ..15 V 480 Cres 0.14 Internal gate resistance RGint 5 Turn-on delay time td(on) td(off) Fall time Turn-on switching energy Turn-off switching energy Short circuit current 2) tf Eon Eoff ISC nC 6.7 VCE = 25 V, VGE = 0 V, f = 1 MHz, Tvj = 25 °C Reverse transfer capacitance Turn-off delay time µA 500 Coes tr µA -500 Output capacitance Rise time Unit 2.2 ICES VGE(TO) max Tvj = 25 °C Collector cut-off current Gate-emitter threshold voltage typ 0.43 VCC = 1250 V, IC = 54 A, RG = 33 Ω, VGE = ±15 V, Lσ = 2400 nH, inductive load Tvj = 25 °C 350 Tvj = 125 °C 350 Tvj = 25 °C 280 Tvj = 125 °C 280 VCC = 1250 V, IC = 54 A, RG = 33 Ω, VGE = ±15 V, Lσ = 2400 nH, inductive load Tvj = 25 °C 810 Tvj = 125 °C 910 Tvj = 25 °C 370 Tvj = 125 °C 430 Tvj = 25 °C 36 VCC = 1250 V, IC = 54 A, VGE = ±15 V, RG = 33 Ω, Lσ = 2400 nH, inductive load, FWD: ½ 5SLX12L2507 VCC = 1250 V, IC = 54 A, VGE = ±15 V, RG = 33 Ω, Lσ = 2400 nH, inductive load nF Ω ns ns ns ns mJ Tvj = 125 °C 48 Tvj = 25 °C 68 mJ Tvj = 125 °C tpsc ≤ 10 μs, VGE = 15 V, Tvj = 125 °C, VCC = 2000 V, VCEM ≤ 2500 V 85 250 A Characteristic values according to IEC 60747 - 9 ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1640-00 Mar 07 page 2 of 5 5SMX 12L2511 Mechanical properties Parameter Unit Overall die L x W exposed L x W (except gate pad) front metal Dimensions gate pad LxW thickness Metallization 3) 3) 12.4 x 12.4 mm 9.0 x 9.0 mm 1.46 x 1.61 mm 310 ± 20 µm front (E) AlSi1 + TiNiAg 4+4 µm back (C) AlSi1 + TiNiAg 1.8 + 1.2 µm For assembly instructions refer to : IGBT and Diode chips from ABB Switzerland Ltd, Semiconductors, Doc. No. 5SYA 2033. 1.61±0.05 +0.04 1.90-0 +0.04 9.00 -0 12.38 ±0.05 10.67 Outline drawing Note: all dimensions are shown in mm This is an electrostatic sensitive device, please observe the international standard IEC 60747-1, Chap. IX. This product has been designed and qualified for Industrial Level. ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1640-00 Mar 07 page 3 of 5 5SMX 12L2511 162 162 VCE = 20 V 135 135 25 °C 108 108 IC [A] IC [A] 125 °C 81 81 54 54 27 27 125 °C 25 °C VGE = 15 V 0 0 0 1 2 3 4 5 6 7 0 2 4 VCE [V] Fig. 1 8 10 Typical on-state characteristics Fig. 2 14 16 Typical transfer characteristics 120 VCC = 1250 V RG = 33 ohm VGE = ±15 V Tvj = 125 °C Lσ = 2.4 µH 250 E on 100 E off 200 80 E on , E off [mJ] E off 150 60 40 100 E on VCC = 1250 V IC = 54 A VGE = ±15 V Tvj = 125 °C Lσ = 2.4 µH 20 50 E sw [mJ] = 0.94 x 10 -2 x I C2 + 1.36 x I C + 9.77 0 0 0 27 54 81 108 135 0 162 Typical switching characteristics vs collector current 20 40 60 80 100 120 140 R G [ohm] IC [A] Fig. 3 12 VGE [V] 300 E on, E off [mJ] 6 Fig. 4 Typical switching characteristics vs gate resistor ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1640-00 Mar 07 page 4 of 5 5SMX 12L2511 20 10 C ies VCC = 1250 V 15 C [nF] V GE [V] VCC = 1800 V 10 1 C oes C res 5 VGE = 0 V f osc = 1 MHz Vosc = 50 mV IC = 54 A Tvj = 25 °C 0 0.1 0.00 Fig. 5 0.10 0.20 0.30 Q g [µC] 0.40 Typical gate charge characteristics 0.50 0 Fig. 6 5 10 15 20 VCE [V] 25 30 35 Typical capacitances vs collector-emitter voltage ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. ABB Switzerland Ltd Semiconductors Fabrikstrasse 3 CH-5600 Lenzburg, Switzerland Telephone Fax Email Internet +41 (0)58 586 1419 +41 (0)58 586 1306 [email protected] www.abb.com/semiconductors Doc. No. 5SYA1640-00 Mar 07