ABB 5SNA1200E2501

VCE
IC
=
=
2500 V
1200 A
ABB HiPakTM
IGBT Module
5SNA 1200E250100
Doc. No. 5SYA 1557-02 July 04
• Low-loss, rugged SPT chip-set
• Smooth switching SPT chip-set for
good EMC
• Industry standard package
• High power density
• AlSiC base-plate for high power
cycling capability
• AlN substrate for low thermal
resistance
Maximum rated values
1)
Parameter
Symbol
Collector-emitter voltage
max
Unit
VCES
VGE = 0 V
2500
V
IC
Tc = 80 °C
1200
A
Peak collector current
ICM
tp = 1 ms, Tc = 80 °C
2400
A
Total power dissipation
DC forward current
Peak forward current
Surge current
VGES
Ptot
-20
Tc = 25 °C, per switch (IGBT)
IF
IFRM
IFSM
VR = 0 V, Tvj = 125 °C,
tp = 10 ms, half-sinewave
IGBT short circuit SOA
tpsc
VCC = 1900 V, VCEM CHIP ≤ 2500 V
VGE ≤ 15 V, Tvj ≤ 125 °C
Isolation voltage
Visol
1 min, f = 50 Hz
Junction temperature
Tvj
Junction operating temperature
20
V
11000
W
1200
A
2400
A
11000
A
10
µs
5000
V
150
°C
Tvj(op)
-40
125
°C
Case temperature
Tc
-40
125
°C
Storage temperature
Tstg
-40
125
°C
Mounting torques
2)
min
DC collector current
Gate-emitter voltage
1)
Conditions
2)
M1
Base-heatsink, M6 screws
4
6
M2
Main terminals, M8 screws
8
10
M3
Auxiliary terminals, M4 screws
2
3
Maximum rated values indicate limits beyond which damage to the device may occur per IEC 60747
For detailed mounting instructions refer to ABB Document No. 5SYA2039
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Nm
5SNA 1200E250100
IGBT characteristic values
3)
Parameter
Symbol
Conditions
min
Collector (-emitter)
breakdown voltage
V(BR)CES
VGE = 0 V, IC = 10 mA, Tvj = 25 °C
2500
Collector-emitter 4)
saturation voltage
VCE sat
IC = 1200 A, VGE = 15 V
Collector cut-off current
ICES
VCE = 2500 V, VGE = 0 V
Gate leakage current
IGES
VCE = 0 V, VGE = ±20 V, Tvj = 125 °C
VGE(TO)
IC = 240 mA, VCE = VGE, Tvj = 25 °C
Gate-emitter threshold voltage
Gate charge
Qge
Input capacitance
Cies
Output capacitance
Coes
Reverse transfer capacitance
Cres
Turn-on delay time
td(on)
Rise time
Turn-off delay time
Fall time
Turn-on switching energy
Turn-off switching energy
Short circuit current
tr
td(off)
tf
Eon
Eoff
ISC
Module stray inductance
Lσ CE
Resistance, terminal-chip
RCC’+EE’
3)
4)
typ
max
Unit
V
Tvj = 25 °C
2.2
2.5
2.9
V
Tvj = 125 °C
2.8
3.1
3.4
V
12
mA
120
mA
-500
500
nA
5
7.5
V
Tvj = 25 °C
Tvj = 125 °C
60
IC = 1200 A, VCE = 1250 V,
VGE = -15 V .. 15 V
12.2
µC
186
VCE = 25 V, VGE = 0 V, f = 1 MHz,
Tvj = 25 °C
13.7
nF
2.98
VCC = 1250 V,
IC = 1200 A,
RG = 1.5 Ω,
VGE = ±15 V,
Lσ = 100 nH, inductive load
Tvj = 25 °C
375
Tvj = 125 °C
365
Tvj = 25 °C
240
Tvj = 125 °C
250
VCC = 1250 V,
IC = 1200 A,
RG = 1.5 Ω,
VGE = ±15 V,
Lσ = 100 nH, inductive load
Tvj = 25 °C
875
Tvj = 125 °C
980
Tvj = 25 °C
300
Tvj = 125 °C
345
VCC = 1250 V, IC = 1200 A,
VGE = ±15 V, RG = 1.5 Ω,
Lσ = 100 nH, inductive load
Tvj = 25 °C
820
Tvj = 125 °C
1150
VCC = 1250 V, IC = 1200 A,
VGE = ±15 V, RG = 1.5 Ω,
Lσ = 100 nH, inductive load
Tvj = 25 °C
980
Tvj = 125 °C
1250
ns
ns
ns
ns
mJ
mJ
tpsc ≤ 10 μs, VGE = 15 V, Tvj = 125 °C,
VCC = 1900 V, VCEM CHIP ≤ 2500 V
5800
A
10
nH
TC = 25 °C
0.06
TC = 125 °C
0.085
mΩ
Characteristic values according to IEC 60747 – 9
Collector-emitter saturation voltage is given at chip level
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA 1557-02 July 04
page 2 of 9
5SNA 1200E250100
Diode characteristic values
Parameter
Forward voltage
6)
5)
Symbol
Conditions
VF
IF = 1200 A
Reverse recovery current
Irr
Recovered charge
Qrr
Reverse recovery time
trr
Reverse recovery energy
5)
6)
VCC = 1250 V,
IF = 1200 A,
VGE = ±15 V,
RG = 1.5 Ω
Lσ = 100 nH
inductive load
Erec
min
typ
max
Tvj = 25 °C
1.5
1.75
2.0
Tvj = 125 °C
1.4
1.8
2.0
Tvj = 25 °C
965
Tvj = 125 °C
1180
Tvj = 25 °C
680
Tvj = 125 °C
1150
Tvj = 25 °C
1250
Tvj = 125 °C
1710
Tvj = 25 °C
580
Tvj = 125 °C
960
Unit
V
A
µC
ns
mJ
Characteristic values according to IEC 60747 – 2
Forward voltage is given at chip level
Thermal properties
Parameter
Symbol
IGBT thermal resistance
junction to case
Rth(j-c)IGBT
0.009 K/W
Diode thermal resistance
junction to case
Rth(j-c)DIODE
0.017 K/W
Thermal resistance case
to heatsink
2)
2)
Conditions
min
per module, λ grease = 1W/m x K
Rth(c-h)
typ
max
0.006
Unit
K/W
For detailed mounting instructions refer to ABB Document No. 5SYA2039
Mechanical properties
Parameter
Symbol
Dimensions
LxW
x
Conditions
H Typical , see outline drawing
min
max
190 x 140 x 38
Clearance distance
DC
according to IEC 60664-1 Term. to base:
and EN 50124-1
Term. to term:
23
Surface creepage distance
DSC
according to IEC 60664-1 Term. to base:
and EN 50124-1
Term. to term:
33
Weight
typ
Unit
mm
mm
19
mm
32
1500
g
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA 1557-02 July 04
page 3 of 9
5SNA 1200E250100
Electrical configuration
Outline drawing
2)
Note: all dimensions are shown in mm
2)
For detailed mounting instructions refer to ABB Document No. 5SYA2039
This is an electrostatic sensitive device, please observe the international standard IEC 60747-1, chap. IX.
This product has been designed and qualified for Industrial Level.
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA 1557-02 July 04
page 4 of 9
5SNA 1200E250100
2400
2400
2200
2200
2000
2000
25 °C
1800
1800
1600
1600
1400
1400
IC [A]
IC [A]
125 °C
1200
1200
1000
1000
800
800
600
600
400
400
200
125 °C
25 °C
200
VGE = 15 V
0
0
0
1
2
3
4
5
0
1
2
3
4
5
VCE [V]
Fig. 1
Fig. 2
Typical on-state characteristics, chip level
8
9 10 11 12 13
Typical transfer characteristics, chip level
2400
2200
17 V
2200
2000
15 V
2000
1800
13 V
1800
11 V
1600
11 V
1400
9V
1600
IC [A]
1400
IC [A]
7
VGE [V]
2400
1200
1000
800
800
600
17 V
15 V
13 V
1200
1000
600
9V
400
400
200
200
Tvj = 25°C
0
Tvj = 125 °C
0
0
1
2
3
4
5
6
0
VCE [V]
Fig. 3
6
Typical output characteristics, chip level
1
2
3
4
5
6
VCE [V]
Fig. 4
Typical output characteristics, chip level
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA 1557-02 July 04
page 5 of 9
5SNA 1200E250100
3.5
6
VCC = 1250 V
RG = 1.5 ohm
VGE = ±15 V
Tvj = 125 °C
Lσ = 100 nH
3.0
2.5
VCC = 1250 V
IC = 1200 A
VGE = ±15 V
Tvj = 125 °C
Lσ = 100 nH
5
Eon
Eon, E off [J]
Eon, Eoff [J]
4
2.0
Eoff
1.5
Eon
3
2
1.0
Eoff
1
0.5
E sw [mJ] = 325 x 10 -6 x I C 2 + 1.31 x I C +347
0
0.0
0
500
1000
1500
2000
0
2500
5
Typical switching energies per pulse
vs collector current
Fig. 6
Typical switching energies per pulse
vs gate resistor
10
10
VCC = 1250 V
IC = 1200 A
VGE = ±15 V
Tvj = 125 °C
Lσ = 100 nH
1
td(off)
td(on)
tf
td(on), tr, td(off), tf
td(on), t r, t d(off), t f [µs]
td(off)
td(on)
tr
1
0.1
tf
VCC = 1250 V
RG = 1.5 ohm
VGE = ±15 V
Tvj = 125 °C
Lσ = 100 nH
tr
0.01
0.1
0
500
1000
1500
2000
2500
0
Typical switching times
vs collector current
5
10
15
20
RG [ohm]
IC [A]
Fig. 7
15
RG [ohm]
IC [A]
Fig. 5
10
Fig. 8
Typical switching times
vs gate resistor
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA 1557-02 July 04
page 6 of 9
5SNA 1200E250100
1000
20
VGE = 0 V
fOSC = 1 MHz
VOSC = 50 mV
Cies
VCC = 1250 V
15
VCC = 1800 V
VGE [V]
C [nF]
100
Coes
10
10
Cres
5
IC = 1200 A
Tvj = 25 °C
0
1
0
Fig. 9
5
10
15
20
VCE [V]
25
30
0
35
Typical capacitances
vs collector-emitter voltage
Fig. 10
2
4
6
Qg [µC]
8
10
12
Typical gate charge characteristics
2.5
VCC ≤ 1900 V, Tvj = 125 °C
VGE = ±15 V, RG = 1.5 ohm
2
ICpulse / IC
1.5
1
0.5
Chip
Module
0
0
Fig. 11
500
1000
1500
VCE [V]
2000
2500
3000
Turn-off safe operating area (RBSOA)
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA 1557-02 July 04
page 7 of 9
5SNA 1200E250100
1200
1600
VCC = 1250 V
RG = 1.5 ohm
VGE = ±15 V
Tvj = 125 °C
Lσ = 100 nH
Irr
1000
1500
Irr
Erec
800
RG = 3.9 ohm
Erec
600
RG = 15 ohm
400
200
200
E rec [mJ] = -1.86 x 10 -4 x I F 2 + 0.903 x I F + 181
0
RG = 6.8 ohm
400
1200
Qrr
900
600
300
0
0
500
1000
1500
2000
2500
0
0
1
2
IF [A]
Fig. 12
RG = 1.5 ohm
600
RG = 2.7 ohm
800
RG = 1.0 ohm
1000
Erec [mJ]
Erec [mJ], Irr [A], Qrr [µC]
1200
Qrr
Irr [A], Qrr [µQ]
1400
1800
VCC = 1250 V
IF = 1200 A
Tvj = 125 °C
Lσ = 100 nH
3
4
5
6
di/dt [kA/µs]
Typical reverse recovery characteristics
vs forward current
Fig. 13
2400
Typical reverse recovery characteristics
vs di/dt
2800
VCC ≤ 1900 V
di/dt ≤ 8000 A/µs
Tvj = 125 °C
2200
2400
2000
1800
25 °C
2000
1600
125 °C
1600
IR [A]
IF [A]
1400
1200
1200
1000
800
800
600
400
400
200
0
0
0
0.5
1
1.5
2
0
2.5
VF [V]
Fig. 14
Typical diode forward characteristics,
chip level
500
1000
1500
2000
2500
3000
VR [V]
Fig. 15
Safe operating area diode (SOA)
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA 1557-02 July 04
page 8 of 9
5SNA 1200E250100
0.1
Analytical function for transient thermal
impedance:
Z th (j-c) (t) = ∑ R i (1 - e -t/τ i )
0.01
i =1
0.001
i
1
2
3
4
IGBT
Zth(j-c) IGBT
Ri(K/kW)
6.287
1.685
0.685
0.337
τi(ms)
194.7
20.4
1.98
0.52
DIODE
Zth(j-h) [K/W] IGBT, DIODE
n
Zth(j-c) Diode
Ri(K/kW)
11.54
2.92
1.28
1.27
τi(ms)
203.4
29.3
6.96
1.5
5
0.0001
0.001
Fig. 16
0.01
0.1
t [s]
1
10
Thermal impedance vs time
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
ABB Switzerland Ltd
Semiconductors
Fabrikstrasse 3
CH-5600 Lenzburg, Switzerland
Telephone
Fax
Email
Internet
+41 (0)58 586 1419
+41 (0)58 586 1306
abbsem@ch.abb.com
www.abb.com/semiconductors
Doc. No. 5SYA 1557-02 July 04