VCE IC = = 2500 V 1200 A ABB HiPakTM IGBT Module 5SNA 1200E250100 Doc. No. 5SYA 1557-02 July 04 • Low-loss, rugged SPT chip-set • Smooth switching SPT chip-set for good EMC • Industry standard package • High power density • AlSiC base-plate for high power cycling capability • AlN substrate for low thermal resistance Maximum rated values 1) Parameter Symbol Collector-emitter voltage max Unit VCES VGE = 0 V 2500 V IC Tc = 80 °C 1200 A Peak collector current ICM tp = 1 ms, Tc = 80 °C 2400 A Total power dissipation DC forward current Peak forward current Surge current VGES Ptot -20 Tc = 25 °C, per switch (IGBT) IF IFRM IFSM VR = 0 V, Tvj = 125 °C, tp = 10 ms, half-sinewave IGBT short circuit SOA tpsc VCC = 1900 V, VCEM CHIP ≤ 2500 V VGE ≤ 15 V, Tvj ≤ 125 °C Isolation voltage Visol 1 min, f = 50 Hz Junction temperature Tvj Junction operating temperature 20 V 11000 W 1200 A 2400 A 11000 A 10 µs 5000 V 150 °C Tvj(op) -40 125 °C Case temperature Tc -40 125 °C Storage temperature Tstg -40 125 °C Mounting torques 2) min DC collector current Gate-emitter voltage 1) Conditions 2) M1 Base-heatsink, M6 screws 4 6 M2 Main terminals, M8 screws 8 10 M3 Auxiliary terminals, M4 screws 2 3 Maximum rated values indicate limits beyond which damage to the device may occur per IEC 60747 For detailed mounting instructions refer to ABB Document No. 5SYA2039 ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Nm 5SNA 1200E250100 IGBT characteristic values 3) Parameter Symbol Conditions min Collector (-emitter) breakdown voltage V(BR)CES VGE = 0 V, IC = 10 mA, Tvj = 25 °C 2500 Collector-emitter 4) saturation voltage VCE sat IC = 1200 A, VGE = 15 V Collector cut-off current ICES VCE = 2500 V, VGE = 0 V Gate leakage current IGES VCE = 0 V, VGE = ±20 V, Tvj = 125 °C VGE(TO) IC = 240 mA, VCE = VGE, Tvj = 25 °C Gate-emitter threshold voltage Gate charge Qge Input capacitance Cies Output capacitance Coes Reverse transfer capacitance Cres Turn-on delay time td(on) Rise time Turn-off delay time Fall time Turn-on switching energy Turn-off switching energy Short circuit current tr td(off) tf Eon Eoff ISC Module stray inductance Lσ CE Resistance, terminal-chip RCC’+EE’ 3) 4) typ max Unit V Tvj = 25 °C 2.2 2.5 2.9 V Tvj = 125 °C 2.8 3.1 3.4 V 12 mA 120 mA -500 500 nA 5 7.5 V Tvj = 25 °C Tvj = 125 °C 60 IC = 1200 A, VCE = 1250 V, VGE = -15 V .. 15 V 12.2 µC 186 VCE = 25 V, VGE = 0 V, f = 1 MHz, Tvj = 25 °C 13.7 nF 2.98 VCC = 1250 V, IC = 1200 A, RG = 1.5 Ω, VGE = ±15 V, Lσ = 100 nH, inductive load Tvj = 25 °C 375 Tvj = 125 °C 365 Tvj = 25 °C 240 Tvj = 125 °C 250 VCC = 1250 V, IC = 1200 A, RG = 1.5 Ω, VGE = ±15 V, Lσ = 100 nH, inductive load Tvj = 25 °C 875 Tvj = 125 °C 980 Tvj = 25 °C 300 Tvj = 125 °C 345 VCC = 1250 V, IC = 1200 A, VGE = ±15 V, RG = 1.5 Ω, Lσ = 100 nH, inductive load Tvj = 25 °C 820 Tvj = 125 °C 1150 VCC = 1250 V, IC = 1200 A, VGE = ±15 V, RG = 1.5 Ω, Lσ = 100 nH, inductive load Tvj = 25 °C 980 Tvj = 125 °C 1250 ns ns ns ns mJ mJ tpsc ≤ 10 μs, VGE = 15 V, Tvj = 125 °C, VCC = 1900 V, VCEM CHIP ≤ 2500 V 5800 A 10 nH TC = 25 °C 0.06 TC = 125 °C 0.085 mΩ Characteristic values according to IEC 60747 – 9 Collector-emitter saturation voltage is given at chip level ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA 1557-02 July 04 page 2 of 9 5SNA 1200E250100 Diode characteristic values Parameter Forward voltage 6) 5) Symbol Conditions VF IF = 1200 A Reverse recovery current Irr Recovered charge Qrr Reverse recovery time trr Reverse recovery energy 5) 6) VCC = 1250 V, IF = 1200 A, VGE = ±15 V, RG = 1.5 Ω Lσ = 100 nH inductive load Erec min typ max Tvj = 25 °C 1.5 1.75 2.0 Tvj = 125 °C 1.4 1.8 2.0 Tvj = 25 °C 965 Tvj = 125 °C 1180 Tvj = 25 °C 680 Tvj = 125 °C 1150 Tvj = 25 °C 1250 Tvj = 125 °C 1710 Tvj = 25 °C 580 Tvj = 125 °C 960 Unit V A µC ns mJ Characteristic values according to IEC 60747 – 2 Forward voltage is given at chip level Thermal properties Parameter Symbol IGBT thermal resistance junction to case Rth(j-c)IGBT 0.009 K/W Diode thermal resistance junction to case Rth(j-c)DIODE 0.017 K/W Thermal resistance case to heatsink 2) 2) Conditions min per module, λ grease = 1W/m x K Rth(c-h) typ max 0.006 Unit K/W For detailed mounting instructions refer to ABB Document No. 5SYA2039 Mechanical properties Parameter Symbol Dimensions LxW x Conditions H Typical , see outline drawing min max 190 x 140 x 38 Clearance distance DC according to IEC 60664-1 Term. to base: and EN 50124-1 Term. to term: 23 Surface creepage distance DSC according to IEC 60664-1 Term. to base: and EN 50124-1 Term. to term: 33 Weight typ Unit mm mm 19 mm 32 1500 g ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA 1557-02 July 04 page 3 of 9 5SNA 1200E250100 Electrical configuration Outline drawing 2) Note: all dimensions are shown in mm 2) For detailed mounting instructions refer to ABB Document No. 5SYA2039 This is an electrostatic sensitive device, please observe the international standard IEC 60747-1, chap. IX. This product has been designed and qualified for Industrial Level. ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA 1557-02 July 04 page 4 of 9 5SNA 1200E250100 2400 2400 2200 2200 2000 2000 25 °C 1800 1800 1600 1600 1400 1400 IC [A] IC [A] 125 °C 1200 1200 1000 1000 800 800 600 600 400 400 200 125 °C 25 °C 200 VGE = 15 V 0 0 0 1 2 3 4 5 0 1 2 3 4 5 VCE [V] Fig. 1 Fig. 2 Typical on-state characteristics, chip level 8 9 10 11 12 13 Typical transfer characteristics, chip level 2400 2200 17 V 2200 2000 15 V 2000 1800 13 V 1800 11 V 1600 11 V 1400 9V 1600 IC [A] 1400 IC [A] 7 VGE [V] 2400 1200 1000 800 800 600 17 V 15 V 13 V 1200 1000 600 9V 400 400 200 200 Tvj = 25°C 0 Tvj = 125 °C 0 0 1 2 3 4 5 6 0 VCE [V] Fig. 3 6 Typical output characteristics, chip level 1 2 3 4 5 6 VCE [V] Fig. 4 Typical output characteristics, chip level ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA 1557-02 July 04 page 5 of 9 5SNA 1200E250100 3.5 6 VCC = 1250 V RG = 1.5 ohm VGE = ±15 V Tvj = 125 °C Lσ = 100 nH 3.0 2.5 VCC = 1250 V IC = 1200 A VGE = ±15 V Tvj = 125 °C Lσ = 100 nH 5 Eon Eon, E off [J] Eon, Eoff [J] 4 2.0 Eoff 1.5 Eon 3 2 1.0 Eoff 1 0.5 E sw [mJ] = 325 x 10 -6 x I C 2 + 1.31 x I C +347 0 0.0 0 500 1000 1500 2000 0 2500 5 Typical switching energies per pulse vs collector current Fig. 6 Typical switching energies per pulse vs gate resistor 10 10 VCC = 1250 V IC = 1200 A VGE = ±15 V Tvj = 125 °C Lσ = 100 nH 1 td(off) td(on) tf td(on), tr, td(off), tf td(on), t r, t d(off), t f [µs] td(off) td(on) tr 1 0.1 tf VCC = 1250 V RG = 1.5 ohm VGE = ±15 V Tvj = 125 °C Lσ = 100 nH tr 0.01 0.1 0 500 1000 1500 2000 2500 0 Typical switching times vs collector current 5 10 15 20 RG [ohm] IC [A] Fig. 7 15 RG [ohm] IC [A] Fig. 5 10 Fig. 8 Typical switching times vs gate resistor ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA 1557-02 July 04 page 6 of 9 5SNA 1200E250100 1000 20 VGE = 0 V fOSC = 1 MHz VOSC = 50 mV Cies VCC = 1250 V 15 VCC = 1800 V VGE [V] C [nF] 100 Coes 10 10 Cres 5 IC = 1200 A Tvj = 25 °C 0 1 0 Fig. 9 5 10 15 20 VCE [V] 25 30 0 35 Typical capacitances vs collector-emitter voltage Fig. 10 2 4 6 Qg [µC] 8 10 12 Typical gate charge characteristics 2.5 VCC ≤ 1900 V, Tvj = 125 °C VGE = ±15 V, RG = 1.5 ohm 2 ICpulse / IC 1.5 1 0.5 Chip Module 0 0 Fig. 11 500 1000 1500 VCE [V] 2000 2500 3000 Turn-off safe operating area (RBSOA) ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA 1557-02 July 04 page 7 of 9 5SNA 1200E250100 1200 1600 VCC = 1250 V RG = 1.5 ohm VGE = ±15 V Tvj = 125 °C Lσ = 100 nH Irr 1000 1500 Irr Erec 800 RG = 3.9 ohm Erec 600 RG = 15 ohm 400 200 200 E rec [mJ] = -1.86 x 10 -4 x I F 2 + 0.903 x I F + 181 0 RG = 6.8 ohm 400 1200 Qrr 900 600 300 0 0 500 1000 1500 2000 2500 0 0 1 2 IF [A] Fig. 12 RG = 1.5 ohm 600 RG = 2.7 ohm 800 RG = 1.0 ohm 1000 Erec [mJ] Erec [mJ], Irr [A], Qrr [µC] 1200 Qrr Irr [A], Qrr [µQ] 1400 1800 VCC = 1250 V IF = 1200 A Tvj = 125 °C Lσ = 100 nH 3 4 5 6 di/dt [kA/µs] Typical reverse recovery characteristics vs forward current Fig. 13 2400 Typical reverse recovery characteristics vs di/dt 2800 VCC ≤ 1900 V di/dt ≤ 8000 A/µs Tvj = 125 °C 2200 2400 2000 1800 25 °C 2000 1600 125 °C 1600 IR [A] IF [A] 1400 1200 1200 1000 800 800 600 400 400 200 0 0 0 0.5 1 1.5 2 0 2.5 VF [V] Fig. 14 Typical diode forward characteristics, chip level 500 1000 1500 2000 2500 3000 VR [V] Fig. 15 Safe operating area diode (SOA) ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA 1557-02 July 04 page 8 of 9 5SNA 1200E250100 0.1 Analytical function for transient thermal impedance: Z th (j-c) (t) = ∑ R i (1 - e -t/τ i ) 0.01 i =1 0.001 i 1 2 3 4 IGBT Zth(j-c) IGBT Ri(K/kW) 6.287 1.685 0.685 0.337 τi(ms) 194.7 20.4 1.98 0.52 DIODE Zth(j-h) [K/W] IGBT, DIODE n Zth(j-c) Diode Ri(K/kW) 11.54 2.92 1.28 1.27 τi(ms) 203.4 29.3 6.96 1.5 5 0.0001 0.001 Fig. 16 0.01 0.1 t [s] 1 10 Thermal impedance vs time ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. ABB Switzerland Ltd Semiconductors Fabrikstrasse 3 CH-5600 Lenzburg, Switzerland Telephone Fax Email Internet +41 (0)58 586 1419 +41 (0)58 586 1306 [email protected] www.abb.com/semiconductors Doc. No. 5SYA 1557-02 July 04