ABB 5SNA2400E1701

VCE
IC
=
=
1700 V
2400 A
ABB HiPakTM
IGBT Module
5SNA 2400E170100
Doc. No. 5SYA1555-03 Oct 06
• Low-loss, rugged SPT chip-set
• Smooth switching SPT chip-set for
good EMC
• Industry standard package
• High power density
• AlSiC base-plate for high power
cycling capability
• AlN substrate for low thermal
resistance
Maximum rated values
1)
Parameter
Symbol
Collector-emitter voltage
max
Unit
VGE = 0 V, Tvj ≥ 25 °C
1700
V
IC
Tc = 80 °C
2400
A
Peak collector current
ICM
tp = 1 ms, Tc = 80 °C
4800
A
20
V
14300
W
IF
2400
A
Peak forward current
IFRM
4800
A
Surge current
IFSM
20000
A
10
µs
4000
V
150
°C
Total power dissipation
DC forward current
VGES
Ptot
-20
Tc = 25 °C, per switch (IGBT)
VR = 0 V, Tvj = 125 °C,
tp = 10 ms, half-sinewave
IGBT short circuit SOA
tpsc
VCC = 1200 V, VCEM CHIP ≤ 1700 V
VGE ≤ 15 V, Tvj ≤ 125 °C
Isolation voltage
Visol
1 min, f = 50 Hz
Junction temperature
Tvj
Junction operating temperature
Tvj(op)
-40
125
°C
Case temperature
Tc
-40
125
°C
Storage temperature
Tstg
-40
125
°C
Mounting torques
2)
min
DC collector current
Gate-emitter voltage
1)
VCES
Conditions
2)
Ms
Base-heatsink, M6 screws
4
6
Mt1
Main terminals, M8 screws
8
10
Mt2
Auxiliary terminals, M4 screws
2
3
Maximum rated values indicate limits beyond which damage to the device may occur per IEC 60747
For detailed mounting instructions refer to ABB Document No. 5SYA2039
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Nm
5SNA 2400E170100
IGBT characteristic values
3)
Parameter
Symbol
Conditions
min
Collector (-emitter)
breakdown voltage
V(BR)CES
VGE = 0 V, IC = 10 mA, Tvj = 25 °C
1700
Collector-emitter 4)
saturation voltage
VCE sat
IC = 2400 A, VGE = 15 V
Collector cut-off current
ICES
VCE = 1700 V, VGE = 0 V
Gate leakage current
IGES
VCE = 0 V, VGE = ±20 V, Tvj = 125 °C
VGE(TO)
IC = 240 mA, VCE = VGE, Tvj = 25 °C
Gate-emitter threshold voltage
Gate charge
Qge
Input capacitance
Cies
Output capacitance
Coes
Reverse transfer capacitance
Cres
Turn-on delay time
td(on)
Rise time
Turn-off delay time
Fall time
Turn-on switching energy
Turn-off switching energy
Short circuit current
tr
td(off)
tf
Eon
Eoff
ISC
Module stray inductance
Lσ CE
Resistance, terminal-chip
RCC’+EE’
3)
4)
typ
max
Unit
V
Tvj = 25 °C
2.0
2.3
2.6
V
Tvj = 125 °C
2.3
2.6
2.9
V
Tvj = 25 °C
12
mA
Tvj = 125 °C
120
mA
-500
500
nA
4.5
6.5
V
IC = 2400 A, VCE = 900 V,
VGE = -15 V .. 15 V
22
µC
228
VCE = 25 V, VGE = 0 V, f = 1 MHz,
Tvj = 25 °C
22.1
nF
9.6
VCC = 900 V,
IC = 2400 A,
RG = 0.56 Ω,
VGE = ±15 V,
Lσ = 60 nH, inductive load
Tvj = 25 °C
320
Tvj = 125 °C
320
Tvj = 25 °C
270
Tvj = 125 °C
275
VCC = 900 V,
IC = 2400 A,
RG = 0.56 Ω,
VGE = ±15 V,
Lσ = 60 nH, inductive load
Tvj = 25 °C
1000
Tvj = 125 °C
1090
Tvj = 25 °C
250
Tvj = 125 °C
265
VCC = 900 V, IC = 2400 A,
VGE = ±15 V, RG = 0.56 Ω,
Lσ = 60 nH, inductive load
Tvj = 25 °C
495
Tvj = 125 °C
700
VCC = 900 V, IC = 2400 A,
VGE = ±15 V, RG = 0.56 Ω,
Lσ = 60 nH, inductive load
Tvj = 25 °C
850
Tvj = 125 °C
1000
tpsc ≤ 10 μs, VGE = 15 V, Tvj = 125 °C,
VCC = 1200 V, VCEM CHIP ≤ 1700 V
ns
ns
ns
ns
mJ
mJ
11100
A
10
nH
TC = 25 °C
0.06
TC = 125 °C
0.085
mΩ
Characteristic values according to IEC 60747 – 9
Collector-emitter saturation voltage is given at chip level
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1555-03 Oct 06
page 2 of 9
5SNA 2400E170100
Diode characteristic values
Parameter
Forward voltage
6)
5)
Symbol
Conditions
VF
IF = 2400 A
Reverse recovery current
Irr
Recovered charge
Qrr
Reverse recovery time
trr
Reverse recovery energy
5)
6)
VCC = 900 V,
IF = 2400 A,
VGE = ±15 V,
RG = 0.56 Ω
Lσ = 60 nH
inductive load
Erec
min
typ
max
Tvj = 25 °C
1.65
2.0
Tvj = 125 °C
1.7
2.0
Tvj = 25 °C
1520
Tvj = 125 °C
1880
Tvj = 25 °C
590
Tvj = 125 °C
1025
Tvj = 25 °C
580
Tvj = 125 °C
870
Tvj = 25 °C
420
Tvj = 125 °C
720
Unit
V
A
µC
ns
mJ
Characteristic values according to IEC 60747 – 2
Forward voltage is given at chip level
Thermal properties
7)
Parameter
Symbol
IGBT thermal resistance
junction to case
Rth(j-c)IGBT
0.007 K/W
Diode thermal resistance
junction to case
Rth(j-c)DIODE
0.012 K/W
IGBT thermal resistance
case to heatsink
2)
Diode thermal resistance
case to heatsink
7)
2)
Conditions
min
max
Unit
Rth(c-s)IGBT IGBT per switch, λ grease = 1W/m x K
0.009
K/W
Rth(c-s)DIODE Diode per switch, λ grease = 1W/m x K
0.018
K/W
For detailed mounting instructions refer to ABB Document No. 5SYA2039
Mechanical properties
7)
Parameter
Symbol
Dimensions
LxW
x
Conditions
H Typical , see outline drawing
min
typ
max
190 x 140 x 38
Clearance distance in air
da
according to IEC 60664-1 Term. to base:
and EN 50124-1
Term. to term:
23
Surface creepage distance
ds
according to IEC 60664-1 Term. to base:
and EN 50124-1
Term. to term:
33
Mass
m
7)
typ
Unit
mm
mm
19
mm
32
1500
g
Thermal and mechanical properties according to IEC 60747 – 15
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1555-03 Oct 06
page 3 of 9
5SNA 2400E170100
Electrical configuration
Outline drawing
2)
Note: all dimensions are shown in mm
2)
For detailed mounting instructions refer to ABB Document No. 5SYA2039
This is an electrostatic sensitive device, please observe the international standard IEC 60747-1, chap. IX.
This product has been designed and qualified for Industrial Level.
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1555-03 Oct 06
page 4 of 9
5SNA 2400E170100
4800
4800
4400
4400
25 °C
4000
4000
125 °C
3600
3600
3200
3200
2800
2800
IC [A]
IC [A]
VCE = 25 V
2400
2400
2000
2000
1600
1600
1200
1200
800
800
400
125 °C
25 °C
400
VGE = 15 V
0
0
0
1
2
3
4
0
5
1
2
3
4
Fig. 2
Typical on-state characteristics, chip level
4800
8
9 10 11 12 13
4800
17V
4400
4000
15V
4000
3600
13V
3600
3200
11V
3200
17V
15V
13V
9V
11V
9V
2800
IC [A]
2800
IC [A]
7
Typical transfer characteristics, chip level
4400
2400
2400
2000
2000
1600
1600
1200
1200
800
800
400
400
Tvj = 25 °C
0
Tvj = 125 °C
0
0
1
2
3
4
5
6
0
VCE [V]
Fig. 3
6
VGE [V]
VCE [V]
Fig. 1
5
Typical output characteristics, chip level
1
2
3
4
5
6
VCE [V]
Fig. 4
Typical output characteristics, chip level
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1555-03 Oct 06
page 5 of 9
5SNA 2400E170100
3.0
3.0
VCC = 900 V
RG = 0.56 ohm
VGE = ±15 V
Tvj = 125 °C
Lσ = 60 nH
2.5
2.5
2.0
Eon, E off [J]
2.0
Eon, E off [J]
VCC = 900 V
IC = 2400 A
VGE = ±15 V
Tvj = 125 °C
Lσ = 60 nH
1.5
Eoff
1.0
Eon
1.5
Eoff
1.0
Eon
0.5
0.5
E sw [mJ] = 1.38 x 10 -4 x I C 2 + 0.28 x I C + 233
0.0
0.0
0
1000
2000
3000
4000
5000
0
1
2
IC [A]
Fig. 5
4
RG [ohm]
Typical switching energies per pulse
vs collector current
Fig. 6
Typical switching energies per pulse
vs gate resistor
10
10
VCC = 900 V
IC = 2400 A
VGE = ±15 V
Tvj = 125 °C
Lσ = 60 nH
td(on), t r, t d(off), t f [µs]
VCC = 900 V
RG = 0.56 ohm
VGE = ±15 V
Tvj = 125 °C
Lσ = 60 nH
td(on), t r, t d(off), t f [µs]
3
td(off)
1
td(off)
1
tr
td(on)
tf
td(on)
tf
tr
0.1
0.1
0
1000
2000
3000
4000
5000
0
IC [A]
Fig. 7
Typical switching times
vs collector current
1
2
3
4
5
RG [ohm]
Fig. 8
Typical switching times
vs gate resistor
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1555-03 Oct 06
page 6 of 9
5SNA 2400E170100
1000
20
VCC = 900 V
Cies
15
100
VGE [V]
VCC = 1300 V
C [nF]
Coes
10
10
Cres
5
VGE = 0 V
fOSC = 1 MHz
VOSC = 50 mV
IC = 2400 A
Tvj = 25 °C
0
1
0
Fig. 9
5
10
15
20
VCE [V]
25
30
0
35
Typical capacitances
vs collector-emitter voltage
Fig. 10
2
4
6
8
10 12
Qg [µC]
14
16
18
20
Typical gate charge characteristics
2.5
VCC ≤ 1200 V, Tvj = 125 °C
VGE = ±15 V, RG = 0.56 ohm
2
ICpulse / IC
1.5
1
0.5
Chip
Module
0
0
Fig. 11
500
1000
VCE [V]
1500
2000
Turn-off safe operating area (RBSOA)
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1555-03 Oct 06
page 7 of 9
5SNA 2400E170100
1000
2500
VCC = 900 V
RG = 0.56 ohm
Tvj = 125 °C
Lσ = 60 nH
900
800
1200
2400
VCC = 900 V
IF = 2400 A
Tvj = 125 °C
Lσ = 60 nH
1000
2000
2000
Irr
Irr
200
Erec
500
200
100
E rec [mJ] = -4.53 x 10 -5 x I F 2 + 0.382 x I F + 76
0
0
0
1000
2000
3000
4000
RG = 3.9 ohm
400
3
4
5
6
7
8
9
10
11
di/dt [kA/µs]
Typical reverse recovery characteristics
vs forward current
Fig. 13
Typical reverse recovery characteristics
vs di/dt
5200
4400
4800
VCC ≤ 1200 V
di/dt ≤ 12 kA/µs
Tvj = 125 °C
4400
4000
25°C
4000
3600
3600
125°C
3200
3200
IR [A]
2800
IF [A]
800
0
2
4800
2400
2000
2800
2400
2000
1600
1600
1200
1200
800
800
400
400
0
0
0
0.5
1
1.5
2
0
2.5
VF [V]
Fig. 14
1200
0
5000
IF [A]
Fig. 12
RG = 0.56 ohm
400
300
RG = 0.82 ohm
1000
RG = 1.0 ohm
400
600
RG = 1.5 ohm
Erec
1600
Qrr
RG = 2.2 ohm
Qrr
500
Erec [mJ], Q rr [µC]
Erec [mJ]
1500
Irr [A], Qrr [µC]
800
600
Irr [A]
700
Typical diode forward characteristics,
chip level
500
1000
1500
2000
VR [V]
Fig. 15
Safe operating area diode (SOA)
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1555-03 Oct 06
page 8 of 9
5SNA 2400E170100
0.1
Analytical function for transient thermal
impedance:
Z th (j-c) (t) = ∑ R i (1 - e -t/τ i )
Zth(j-c) Diode
0.01
i =1
0.001
i
1
2
3
4
IGBT
Zth(j-c) IGBT
Ri(K/kW)
5.059
1.201
0.495
0.246
τi(ms)
202.9
20.3
2.01
0.52
DIODE
Zth(j-c) [K/W] IGBT, DIODE
n
Ri(K/kW)
8.432
1.928
0.866
0.839
τi(ms)
210
29.6
7.01
1.49
0.0001
0.001
Fig. 16
0.01
0.1
t [s]
1
10
Thermal impedance vs time
For detailed information refer to:
• 5SYA 2042-02 Failure rates of HiPak modules due to cosmic rays
• 5SYA 2043-01 Load – cycle capability of HiPaks
• 5SZK 9120-00 Specification of environmental class for HiPak (available upon request)
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
ABB Switzerland Ltd
Semiconductors
Fabrikstrasse 3
CH-5600 Lenzburg, Switzerland
Telephone
Fax
Email
Internet
+41 (0)58 586 1419
+41 (0)58 586 1306
abbsem@ch.abb.com
www.abb.com/semiconductors
Doc. No. 5SYA1555-03 Oct 06