VCE IC = = 1700 V 2400 A ABB HiPakTM IGBT Module 5SNA 2400E170100 Doc. No. 5SYA1555-03 Oct 06 • Low-loss, rugged SPT chip-set • Smooth switching SPT chip-set for good EMC • Industry standard package • High power density • AlSiC base-plate for high power cycling capability • AlN substrate for low thermal resistance Maximum rated values 1) Parameter Symbol Collector-emitter voltage max Unit VGE = 0 V, Tvj ≥ 25 °C 1700 V IC Tc = 80 °C 2400 A Peak collector current ICM tp = 1 ms, Tc = 80 °C 4800 A 20 V 14300 W IF 2400 A Peak forward current IFRM 4800 A Surge current IFSM 20000 A 10 µs 4000 V 150 °C Total power dissipation DC forward current VGES Ptot -20 Tc = 25 °C, per switch (IGBT) VR = 0 V, Tvj = 125 °C, tp = 10 ms, half-sinewave IGBT short circuit SOA tpsc VCC = 1200 V, VCEM CHIP ≤ 1700 V VGE ≤ 15 V, Tvj ≤ 125 °C Isolation voltage Visol 1 min, f = 50 Hz Junction temperature Tvj Junction operating temperature Tvj(op) -40 125 °C Case temperature Tc -40 125 °C Storage temperature Tstg -40 125 °C Mounting torques 2) min DC collector current Gate-emitter voltage 1) VCES Conditions 2) Ms Base-heatsink, M6 screws 4 6 Mt1 Main terminals, M8 screws 8 10 Mt2 Auxiliary terminals, M4 screws 2 3 Maximum rated values indicate limits beyond which damage to the device may occur per IEC 60747 For detailed mounting instructions refer to ABB Document No. 5SYA2039 ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Nm 5SNA 2400E170100 IGBT characteristic values 3) Parameter Symbol Conditions min Collector (-emitter) breakdown voltage V(BR)CES VGE = 0 V, IC = 10 mA, Tvj = 25 °C 1700 Collector-emitter 4) saturation voltage VCE sat IC = 2400 A, VGE = 15 V Collector cut-off current ICES VCE = 1700 V, VGE = 0 V Gate leakage current IGES VCE = 0 V, VGE = ±20 V, Tvj = 125 °C VGE(TO) IC = 240 mA, VCE = VGE, Tvj = 25 °C Gate-emitter threshold voltage Gate charge Qge Input capacitance Cies Output capacitance Coes Reverse transfer capacitance Cres Turn-on delay time td(on) Rise time Turn-off delay time Fall time Turn-on switching energy Turn-off switching energy Short circuit current tr td(off) tf Eon Eoff ISC Module stray inductance Lσ CE Resistance, terminal-chip RCC’+EE’ 3) 4) typ max Unit V Tvj = 25 °C 2.0 2.3 2.6 V Tvj = 125 °C 2.3 2.6 2.9 V Tvj = 25 °C 12 mA Tvj = 125 °C 120 mA -500 500 nA 4.5 6.5 V IC = 2400 A, VCE = 900 V, VGE = -15 V .. 15 V 22 µC 228 VCE = 25 V, VGE = 0 V, f = 1 MHz, Tvj = 25 °C 22.1 nF 9.6 VCC = 900 V, IC = 2400 A, RG = 0.56 Ω, VGE = ±15 V, Lσ = 60 nH, inductive load Tvj = 25 °C 320 Tvj = 125 °C 320 Tvj = 25 °C 270 Tvj = 125 °C 275 VCC = 900 V, IC = 2400 A, RG = 0.56 Ω, VGE = ±15 V, Lσ = 60 nH, inductive load Tvj = 25 °C 1000 Tvj = 125 °C 1090 Tvj = 25 °C 250 Tvj = 125 °C 265 VCC = 900 V, IC = 2400 A, VGE = ±15 V, RG = 0.56 Ω, Lσ = 60 nH, inductive load Tvj = 25 °C 495 Tvj = 125 °C 700 VCC = 900 V, IC = 2400 A, VGE = ±15 V, RG = 0.56 Ω, Lσ = 60 nH, inductive load Tvj = 25 °C 850 Tvj = 125 °C 1000 tpsc ≤ 10 μs, VGE = 15 V, Tvj = 125 °C, VCC = 1200 V, VCEM CHIP ≤ 1700 V ns ns ns ns mJ mJ 11100 A 10 nH TC = 25 °C 0.06 TC = 125 °C 0.085 mΩ Characteristic values according to IEC 60747 – 9 Collector-emitter saturation voltage is given at chip level ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1555-03 Oct 06 page 2 of 9 5SNA 2400E170100 Diode characteristic values Parameter Forward voltage 6) 5) Symbol Conditions VF IF = 2400 A Reverse recovery current Irr Recovered charge Qrr Reverse recovery time trr Reverse recovery energy 5) 6) VCC = 900 V, IF = 2400 A, VGE = ±15 V, RG = 0.56 Ω Lσ = 60 nH inductive load Erec min typ max Tvj = 25 °C 1.65 2.0 Tvj = 125 °C 1.7 2.0 Tvj = 25 °C 1520 Tvj = 125 °C 1880 Tvj = 25 °C 590 Tvj = 125 °C 1025 Tvj = 25 °C 580 Tvj = 125 °C 870 Tvj = 25 °C 420 Tvj = 125 °C 720 Unit V A µC ns mJ Characteristic values according to IEC 60747 – 2 Forward voltage is given at chip level Thermal properties 7) Parameter Symbol IGBT thermal resistance junction to case Rth(j-c)IGBT 0.007 K/W Diode thermal resistance junction to case Rth(j-c)DIODE 0.012 K/W IGBT thermal resistance case to heatsink 2) Diode thermal resistance case to heatsink 7) 2) Conditions min max Unit Rth(c-s)IGBT IGBT per switch, λ grease = 1W/m x K 0.009 K/W Rth(c-s)DIODE Diode per switch, λ grease = 1W/m x K 0.018 K/W For detailed mounting instructions refer to ABB Document No. 5SYA2039 Mechanical properties 7) Parameter Symbol Dimensions LxW x Conditions H Typical , see outline drawing min typ max 190 x 140 x 38 Clearance distance in air da according to IEC 60664-1 Term. to base: and EN 50124-1 Term. to term: 23 Surface creepage distance ds according to IEC 60664-1 Term. to base: and EN 50124-1 Term. to term: 33 Mass m 7) typ Unit mm mm 19 mm 32 1500 g Thermal and mechanical properties according to IEC 60747 – 15 ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1555-03 Oct 06 page 3 of 9 5SNA 2400E170100 Electrical configuration Outline drawing 2) Note: all dimensions are shown in mm 2) For detailed mounting instructions refer to ABB Document No. 5SYA2039 This is an electrostatic sensitive device, please observe the international standard IEC 60747-1, chap. IX. This product has been designed and qualified for Industrial Level. ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1555-03 Oct 06 page 4 of 9 5SNA 2400E170100 4800 4800 4400 4400 25 °C 4000 4000 125 °C 3600 3600 3200 3200 2800 2800 IC [A] IC [A] VCE = 25 V 2400 2400 2000 2000 1600 1600 1200 1200 800 800 400 125 °C 25 °C 400 VGE = 15 V 0 0 0 1 2 3 4 0 5 1 2 3 4 Fig. 2 Typical on-state characteristics, chip level 4800 8 9 10 11 12 13 4800 17V 4400 4000 15V 4000 3600 13V 3600 3200 11V 3200 17V 15V 13V 9V 11V 9V 2800 IC [A] 2800 IC [A] 7 Typical transfer characteristics, chip level 4400 2400 2400 2000 2000 1600 1600 1200 1200 800 800 400 400 Tvj = 25 °C 0 Tvj = 125 °C 0 0 1 2 3 4 5 6 0 VCE [V] Fig. 3 6 VGE [V] VCE [V] Fig. 1 5 Typical output characteristics, chip level 1 2 3 4 5 6 VCE [V] Fig. 4 Typical output characteristics, chip level ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1555-03 Oct 06 page 5 of 9 5SNA 2400E170100 3.0 3.0 VCC = 900 V RG = 0.56 ohm VGE = ±15 V Tvj = 125 °C Lσ = 60 nH 2.5 2.5 2.0 Eon, E off [J] 2.0 Eon, E off [J] VCC = 900 V IC = 2400 A VGE = ±15 V Tvj = 125 °C Lσ = 60 nH 1.5 Eoff 1.0 Eon 1.5 Eoff 1.0 Eon 0.5 0.5 E sw [mJ] = 1.38 x 10 -4 x I C 2 + 0.28 x I C + 233 0.0 0.0 0 1000 2000 3000 4000 5000 0 1 2 IC [A] Fig. 5 4 RG [ohm] Typical switching energies per pulse vs collector current Fig. 6 Typical switching energies per pulse vs gate resistor 10 10 VCC = 900 V IC = 2400 A VGE = ±15 V Tvj = 125 °C Lσ = 60 nH td(on), t r, t d(off), t f [µs] VCC = 900 V RG = 0.56 ohm VGE = ±15 V Tvj = 125 °C Lσ = 60 nH td(on), t r, t d(off), t f [µs] 3 td(off) 1 td(off) 1 tr td(on) tf td(on) tf tr 0.1 0.1 0 1000 2000 3000 4000 5000 0 IC [A] Fig. 7 Typical switching times vs collector current 1 2 3 4 5 RG [ohm] Fig. 8 Typical switching times vs gate resistor ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1555-03 Oct 06 page 6 of 9 5SNA 2400E170100 1000 20 VCC = 900 V Cies 15 100 VGE [V] VCC = 1300 V C [nF] Coes 10 10 Cres 5 VGE = 0 V fOSC = 1 MHz VOSC = 50 mV IC = 2400 A Tvj = 25 °C 0 1 0 Fig. 9 5 10 15 20 VCE [V] 25 30 0 35 Typical capacitances vs collector-emitter voltage Fig. 10 2 4 6 8 10 12 Qg [µC] 14 16 18 20 Typical gate charge characteristics 2.5 VCC ≤ 1200 V, Tvj = 125 °C VGE = ±15 V, RG = 0.56 ohm 2 ICpulse / IC 1.5 1 0.5 Chip Module 0 0 Fig. 11 500 1000 VCE [V] 1500 2000 Turn-off safe operating area (RBSOA) ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1555-03 Oct 06 page 7 of 9 5SNA 2400E170100 1000 2500 VCC = 900 V RG = 0.56 ohm Tvj = 125 °C Lσ = 60 nH 900 800 1200 2400 VCC = 900 V IF = 2400 A Tvj = 125 °C Lσ = 60 nH 1000 2000 2000 Irr Irr 200 Erec 500 200 100 E rec [mJ] = -4.53 x 10 -5 x I F 2 + 0.382 x I F + 76 0 0 0 1000 2000 3000 4000 RG = 3.9 ohm 400 3 4 5 6 7 8 9 10 11 di/dt [kA/µs] Typical reverse recovery characteristics vs forward current Fig. 13 Typical reverse recovery characteristics vs di/dt 5200 4400 4800 VCC ≤ 1200 V di/dt ≤ 12 kA/µs Tvj = 125 °C 4400 4000 25°C 4000 3600 3600 125°C 3200 3200 IR [A] 2800 IF [A] 800 0 2 4800 2400 2000 2800 2400 2000 1600 1600 1200 1200 800 800 400 400 0 0 0 0.5 1 1.5 2 0 2.5 VF [V] Fig. 14 1200 0 5000 IF [A] Fig. 12 RG = 0.56 ohm 400 300 RG = 0.82 ohm 1000 RG = 1.0 ohm 400 600 RG = 1.5 ohm Erec 1600 Qrr RG = 2.2 ohm Qrr 500 Erec [mJ], Q rr [µC] Erec [mJ] 1500 Irr [A], Qrr [µC] 800 600 Irr [A] 700 Typical diode forward characteristics, chip level 500 1000 1500 2000 VR [V] Fig. 15 Safe operating area diode (SOA) ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1555-03 Oct 06 page 8 of 9 5SNA 2400E170100 0.1 Analytical function for transient thermal impedance: Z th (j-c) (t) = ∑ R i (1 - e -t/τ i ) Zth(j-c) Diode 0.01 i =1 0.001 i 1 2 3 4 IGBT Zth(j-c) IGBT Ri(K/kW) 5.059 1.201 0.495 0.246 τi(ms) 202.9 20.3 2.01 0.52 DIODE Zth(j-c) [K/W] IGBT, DIODE n Ri(K/kW) 8.432 1.928 0.866 0.839 τi(ms) 210 29.6 7.01 1.49 0.0001 0.001 Fig. 16 0.01 0.1 t [s] 1 10 Thermal impedance vs time For detailed information refer to: • 5SYA 2042-02 Failure rates of HiPak modules due to cosmic rays • 5SYA 2043-01 Load – cycle capability of HiPaks • 5SZK 9120-00 Specification of environmental class for HiPak (available upon request) ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. ABB Switzerland Ltd Semiconductors Fabrikstrasse 3 CH-5600 Lenzburg, Switzerland Telephone Fax Email Internet +41 (0)58 586 1419 +41 (0)58 586 1306 [email protected] www.abb.com/semiconductors Doc. No. 5SYA1555-03 Oct 06