BL Galaxy Electrical Production specification Small Signal MOSFET Transistor 2N7002 FEATURES z High Density Cell Design For Low RDS(ON)。 Pb z Voltage Controlled Small Switch. z Rugged and Reliable. z High Saturation Current Capability. Lead-free APPLICATIONS z N-channel enhancement mode effect transistor. z Switching application. SOT-23 ORDERING INFORMATION Type No. Marking Package Code 2N7002 3P SOT-23 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter VDSS Drain-Source voltage 60 V VDGR Drain-Gate voltage(RGS≤1MΩ) 60 V VGSS Gate -Source voltage - continuous -Non Repetitive (tp<50μs) ±20 ±40 V Maximum Drain current 115 800 mA ID Value -continuous -Pulsed Units PD Power Dissipation 200 mW RθJA Thermal resistance,Junction-to-Ambient 625 ℃/W TJ, Tstg Junction and Storage Temperature -55-150 ℃ ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Document number: BL/SSMTC008 Rev.A www.galaxycn.com 1 BL Galaxy Electrical Production specification Small Signal MOSFET Transistor 2N7002 Parameter Symbol Test conditions MIN Drain-Source Breakdown Voltage V(BR)DSS VGS=0V,ID=10μA 60 Gate Threshold Voltage VGS(th) VDS=VGS, ID=250μA 1 Forward Reverse IGSS VDS=0V, VGS=20V VDS=0V, VGS=-20V 100 -100 VDS=60V, VGS=0V 1 Zero Gate Voltage Drain Current IDSS Gate-body Leakage TYP MAX 2.1 2.5 On-state Drain Current ID(On) VGS=10V, VDS≥2.0VDS(ON) Drain-Source on-voltage VDS(ON) VGS=10V,ID=500mA VGS=5V,ID=50mA Forward transconductance gFS VDS≥2.0VDS(ON),ID=200mA RDS(ON) Drain-Source diode forward voltage VSD Input capacitance CISS Output capacitance COSS Reverse transfer capacitance CRSS Turn-On Delay Time tD(ON) Turn-Off Delay Time tD(OFF) nA 500 500 2700 0.6 0.09 80 VGS=10V,ID=500mA VGS=10V,ID=500mA,Tj=100℃ VGS=5.0V,ID=50mA VGS=5.0V,ID=50mA, Tj=100℃ VGS=0V,ID=115mA VDS=25V,VGS=0V,f=1.0MHz VDD = 30V, ID= 0.2A, RL = 150Ω, VGS= 10V, RGEN= 25Ω mA 3.75 1.5 320 V mS 1.2 1.7 1.7 2.4 7.5 13.5 7.5 13.5 Ω 0.88 1.5 V 20 50 11 25 4 5 pF 20 ns 20 ns TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Document number: BL/SSMTC008 Rev.A V μA VDS=60V,VGS=0V,Tj=125℃ Static drain-Source on-resistance UNIT www.galaxycn.com 2 BL Galaxy Electrical Small Signal MOSFET Transistor Document number: BL/SSMTC008 Rev.A Production specification 2N7002 www.galaxycn.com 3 BL Galaxy Electrical Production specification Small Signal MOSFET Transistor 2N7002 PACKAGE OUTLINE Plastic surface mounted package SOT-23 SOT-23 A E K B Dim Min Max A 2.85 2.95 B 1.25 1.35 C J D G H D 0.37 0.43 E 0.35 0.48 G 1.85 1.95 H 0.02 0.1 J C 1.0Typical K 0.1Typical 2.35 2.45 All Dimensions in mm SOLDERING FOOTPRINT Unit : mm PACKAGE INFORMATION Device Package Shipping 2N7002 SOT-23 3000/Tape&Reel Document number: BL/SSMTC008 Rev.A www.galaxycn.com 4