CYSTEKEC BTC5103M3

CYStech Electronics Corp.
Spec. No. : C651M3
Issued Date : 2003.11.07
Revised Date :
Page No. : 1/4
NPN Epitaxial Planar Transistor
BTC5103M3
Features
• High IC, IC(DC)=5A
• Low VCE(sat), 0.3V typically
• Good current gain linearity
Symbol
Outline
BTC5103M3
SOT-89
B:Base
C:Collector
E:Emitter
B C E
Absolute Maximum Ratings (Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Power Dissipation
Symbol
VCBO
VCEO
VEBO
IC
ICP
Pd
Thermal Resistance, Junction to Ambient
RθJA
Junction Temperature
Storage Temperature
Tj
Tstg
Limit
Unit
80
60
5
5
10 (Note 1)
0.6
1 (Note 2)
2 (Note 3)
208
125 (Note 2)
62.5 (Note 3)
150
-55~+150
V
V
V
A
A
W
W
W
°C/W
°C/W
°C/W
°C
°C
Note : 1. Single Pulse Pw≦350µs, Duty≦2%.
2. When mounted on FR-4 PCB with area measuring 10×10×1 mm
3. When mounted on ceramic with area measuring 40×40×1 mm
BTC5103M3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C651M3
Issued Date : 2003.11.07
Revised Date :
Page No. : 2/4
Characteristics (Ta=25°C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
ICEO
IEBO
*VCE(sat)
*VBE(sat)
*VBE(on)
*hFE 1
*hFE 2
fT
Min.
80
60
5
82
80
-
Typ.
0.3
8
Max.
10
5
10
1
1.5
1.5
390
-
Unit
V
V
V
µA
mA
µA
V
V
V
MHz
Test Conditions
IC=50µA, IE=0
IC=1mA, IB=0
IE=50µA, IC=0
VCB=60V. IE=0
VCE=60V. IB=0
VEB=5V,IC=0
IC=2A, IB=200mA
IC=2A, IB=200mA
VCE=2V, IC=1A
VCE=5V, IC=500mA
VCE=2V, IC=1A
VCE=5V, IC=500mA, f=1MHz
*Pulse Test : Pulse Width ≤380µs, Duty Cycle≤2%
Classification Of hFE 1
Rank
P
Q
R
Range
82~180
120~270
180~390
BTC5103M3
CYStek Product Specification
Spec. No. : C651M3
Issued Date : 2003.11.07
Revised Date :
Page No. : 3/4
CYStech Electronics Corp.
Characteristic Curves
Saturation Voltage vs Collector Current
Current Gain vs Collector Current
10000
Saturation Voltage---(mV)
Current Gain---HFE
1000
VCE=4V
100
VCE=2V
10
VBE(SAT)@IC=10IB
1000
100
VCE(SAT)@IC=10IB
10
1
10
100
1000
10000
1
Collector Current---IC(mA)
100
1000
10000
Collector Current---IC(mA)
On Voltage vs Collector Current
Power Derating Curves
10000
2.5
Power Dissipation---PD(W)
On Voltage---VBE(ON)(mV)
10
VCE=2V
1000
100
See Note 3 on page 1
2
See Note 2 on page 1
1.5
1
0.5
0
1
BTC5103M3
10
100
1000
Collector Current---IC(mA)
10000
0
50
100
150
Ambient Temperature---Ta(℃)
200
CYStek Product Specification
Spec. No. : C651M3
Issued Date : 2003.11.07
Revised Date :
Page No. : 4/4
CYStech Electronics Corp.
SOT-89 Dimension
Marking:
A
2
1
3
H
C
053
D
B
Style: Pin 1. Base 2. Collector 3. Emitter
E
I
F
3-Lead SOT-89 Plastic
Surface Mounted Package
CYStek Package Code: M3
G
*: Typical
Inches
Min.
Max.
0.1732 0.1811
0.1594 0.1673
0.0591 0.0663
0.0945 0.1024
0.01417 0.0201
DIM
A
B
C
D
E
Millimeters
Min.
Max.
4.40
4.60
4.05
4.25
1.50
1.70
2.40
2.60
0.36
0.51
DIM
F
G
H
I
Inches
Min.
Max.
0.0583 0.0598
0.1165 0.1197
0.0551 0.0630
0.0138 0.0161
Millimeters
Min.
Max.
1.48
1.527
2.96
3.04
1.40
1.60
0.35
0.41
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
• Lead: 42 Alloy ; solder plating
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
BTC5103M3
CYStek Product Specification