CYSTEKEC BTNA42N3

CYStech Electronics Corp.
Spec. No. : C209N3-H
Issued Date : 2003.06.12
Revised Date :
Page No. : 1/4
General Purpose NPN Epitaxial Planar Transistor
BTNA42N3
Description
• High breakdown voltage. (BVCEO=300V)
• Low collector output capacitance. (Typ. 3pF at VCB =30V)
• Ideal for chroma circuit.
Symbol
Outline
BTNA42N3
SOT-23
B:Base
C:Collector
E:Emitter
Absolute Maximum Ratings (Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Power Dissipation
Thermal Resistance, Junction to Ambient
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
Pd
RθJA
Tj
Tstg
Limits
Unit
300
300
6
500
225 (Note)
556
150
-55~+150
V
V
V
mA
mW
℃/W
°C
°C
Note : When mounted on a FR-5 board with area measuring 1.0×0.75×0.062 in.
BTNA42N3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C209N3-H
Issued Date : 2003.06.12
Revised Date :
Page No. : 2/4
Characteristics (Ta=25°C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
*VCE(sat)1
*VCE(sat)2
*VBE(sat)
*hFE1
*hFE2
*hFE3
fT
Cob
Min.
300
300
6
25
52
40
50
-
Typ.
0.1
2
Max.
100
100
0.5
2.
0.9
270
3.0
Unit
V
V
V
nA
nA
V
V
V
MHz
pF
Test Conditions
IC=50µA
IC=1mA
IE=50µA
VCB=200V
VEB=6V
IC=20mA, IB=2mA
IC=30mA, IB=1.5mA
IC=20mA, IB=2mA
VCE=10V, IC=1mA
VCE=10V, IC=10mA
VCE=10V, IC=30mA
VCE=20V, IC=10mA, f=100MHz
VCB=20V, f=1MHz
*Pulse Test: Pulse Width ≤380µs, Duty Cycle≤2%
Classification Of hFE2
Rank
Range
K
52~120
P
82~180
Q
120~270
Characteristic Curves
Saturation Voltage vs Collector Current
Current Gain vs Collector Current
10000
1000
VCE(SAT)@IC=10IB
Saturation Voltage---(mV)
Current Gain---HFE
HFE@VCE=10V
100
1000
100
10
10
0.1
1
10
Collector Current ---IC(mA)
BTNA42N3
100
0.1
1
10
100
Collector Current--- IC(mA)
CYStek Product Specification
Spec. No. : C209N3-H
Issued Date : 2003.06.12
CYStech Electronics Corp.
Saturation Voltage vs Collector Current
Revised Date :
Page No. : 3/4
Cutoff Frequency vs Collector Current
Cutoff Frequency---FT(GHZ)
1
Saturation Voltage---(mV)
1000
VBE(SAT)@IC=10IB
100
FT@VCE=30V
0.1
0.1
1
10
100
Collector Current ---IC(mA)
1
10
100
Collector Current---IC(mA)
Power Derating Curve
Power Dissipation---PD(mW)
250
200
150
100
50
0
0
50
100
150
200
Ambient Temperature --- Ta(℃ )
BTNA42N3
CYStek Product Specification
Spec. No. : C209N3-H
Issued Date : 2003.06.12
CYStech Electronics Corp.
Revised Date :
Page No. : 4/4
SOT-23 Dimension
A
Marking:
L
3
B
1D
TE
S
2
1
G
V
3-Lead SOT-23 Plastic
Surface Mounted Package
CYStek Package Code: N3
C
D
K
H
Style: Pin 1.Base 2.Emitter 3.Collector
J
*: Typical
Inches
Min.
Max.
0.1102 0.1204
0.0472 0.0630
0.0335 0.0512
0.0118 0.0197
0.0669 0.0910
0.0005 0.0040
DIM
A
B
C
D
G
H
Millimeters
Min.
Max.
2.80
3.04
1.20
1.60
0.89
1.30
0.30
0.50
1.70
2.30
0.013
0.10
DIM
J
K
L
S
V
Inches
Min.
Max.
0.0034 0.0070
0.0128 0.0266
0.0335 0.0453
0.0830 0.1083
0.0098 0.0256
Millimeters
Min.
Max.
0.085
0.177
0.32
0.67
0.85
1.15
2.10
2.75
0.25
0.65
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
• Lead: 42 Alloy ; solder plating
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
BTNA42N3
CYStek Product Specification