CYStech Electronics Corp. Spec. No. : C654M3 Issued Date : 2003.07.16 Revised Date :2005.03.11 Page No. : 1/4 NPN Epitaxial Planar Transistor BTD2195M3 Description The BTD2195M3 is designed for use in general purpose amplifier and low speed switching application. Equivalent Circuit Outline BTD2195M3 SOT-89 C B E B C E B：Base C：Collector E：Emitter Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Power Dissipation Symbol VCBO VCEO VEBO IC ICP Pd Thermal Resistance, Junction to Ambient RθJA Junction Temperature Storage Temperature Tj Tstg Limits Unit 130 120 5 4 6 (Note 1) 0.6 1 (Note 2) 2 (Note 3) 208 125 (Note 2) 62.5 (Note 3) 150 -55~+150 V V V A A W W W °C/W °C/W °C/W °C °C Note : 1. Single Pulse Pw≦350µs, Duty≦2%. 2. When mounted on a FR-4 PCB with area measuring 10×10×1 mm. 3. When mounted on a ceramic board with area measuring 40×40×1mm. BTD2195M3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C654M3 Issued Date : 2003.07.16 Revised Date :2005.03.11 Page No. : 2/4 Characteristics (Ta=25°C) Symbol BVCEO BVCBO ICBO ICEO IEBO *VCE(sat) *VBE(on) *hFE1 *hFE2 Cob Min. 120 130 - Typ. - 1000 500 - - Max. 1 2 2 1.2 2.8 200 Unit V V mA mA mA V V pF Test Conditions IC=1mA, IB=0 IC=100µA, IE=0 VCB=100V, IE=0 VCE=50V, IB=0 VEB=5V, IC=0 IC=2A, IB=2mA VCE=4V, IC=2A VCE=4V, IC=1A VCE=4V, IC=2A VCB=10V, IE=0A, f=1MHz *Pulse Test : Pulse Width ≤380µs, Duty Cycle≤2% BTD2195M3 CYStek Product Specification Spec. No. : C654M3 Issued Date : 2003.07.16 Revised Date :2005.03.11 Page No. : 3/4 CYStech Electronics Corp. Characteristic Curves Current Gain vs Collector Current Saturation Voltage vs Collector Current 10000 10000 Saturation Voltage---(mV) Current Gain---HFE VCE = 4V 1000 100 10 VCE(SAT)@IC =250IB 1000 100 1 1 10 100 1000 10000 1 Collector Current---IC(mA) 100 1000 10000 Collector Current---I C (mA) Saturation Voltage vs Collector Current On voltage vs Collector Current 10000 10000 VBE (SAT)@IC = 250IB VBE (ON) @VCE = 4V On voltage---(mV) Saturation Voltage---(mV) 10 1000 100 1000 100 10 1 10 100 1000 10000 Collector Current---I C (mA) 1 10 100 1000 10000 Collector Current---I C (mA) Power Derating Curves Power Dissipation---P D(W) 2.5 See Note 3 on page 1 2 1.5 See Note 2 on page 1 1 0.5 0 0 50 100 150 200 Ambient Temperature---TA(℃) BTD2195M3 CYStek Product Specification Spec. No. : C654M3 Issued Date : 2003.07.16 Revised Date :2005.03.11 Page No. : 4/4 CYStech Electronics Corp. SOT-89 Dimension Marking: A 2 1 3 H C DP D B Style: Pin 1. Base 2. Collector 3. Emitter E I F 3-Lead SOT-89 Plastic Surface Mounted Package CYStek Package Code: M3 G *: Typical Inches Min. Max. 0.1732 0.1811 0.1594 0.1673 0.0591 0.0663 0.0945 0.1024 0.01417 0.0201 DIM A B C D E Millimeters Min. Max. 4.40 4.60 4.05 4.25 1.50 1.70 2.40 2.60 0.36 0.51 DIM F G H I Inches Min. Max. 0.0583 0.0598 0.1165 0.1197 0.0551 0.0630 0.0138 0.0161 Millimeters Min. Max. 1.48 1.527 2.96 3.04 1.40 1.60 0.35 0.41 Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: • Lead: 42 Alloy ; solder plating • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. BTD2195M3 CYStek Product Specification