CYSTEKEC BTD1768A3

CYStech Electronics Corp.
Spec. No. : C304A3
Issued Date : 2003.07.28
Revised Date :2004.12.23
Page No. : 1/4
General Purpose NPN Epitaxial Planar Transistor
BTD1768A3
Description
The BTD1768A3 is designed for use in driver and output stages of AF amplifier and general purpose
application.
Features
• Low collector saturation voltage
• High breakdown voltage, VCEO=80V (min.)
• High collector current, IC(max)=1A (DC)
Symbol
Outline
BTD1768A3
TO-92
B:Base
C:Collector
E:Emitter
ECB
Absolute Maximum Ratings (Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Power Dissipation
Thermal Resistance, Junction to Ambient
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
PD
RθJA
Tj
Tstg
Limits
Unit
100
80
5
1
2 (Note)
750
167
150
-55~+150
V
V
V
A
A
mW
°C/W
°C
°C
Note : Pulse test, PW ≤ 10ms, Duty ≤ 50%.
BTD1768A3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C304A3
Issued Date : 2003.07.28
Revised Date :2004.12.23
Page No. : 2/4
Characteristics (Ta=25°C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
*VCE(SAT)
*hFE
fT
Cob
Min.
100
80
5
120
-
Typ.
0.15
100
20
Max.
1
1
0.4
560
-
Unit
V
V
V
µA
µA
V
MHz
pF
Test Conditions
IC=50µA
IC=1mA
IE=50µA
VCB=80V, IE=0
VEB=4V, IC=0
IC=500mA, IB=20mA
VCE=3V, IC=100mA
VCE=10V, IC=50mA, f=100MHz
VCB=10V, IE=0A, f=1MHz
*Pulse Test: Pulse Width ≤380µs, Duty Cycle≤2%
Classification Of hFE
Rank
Range
BTD1768A3
Q
120~270
R
180~390
S
270~560
CYStek Product Specification
Spec. No. : C304A3
Issued Date : 2003.07.28
Revised Date :2004.12.23
Page No. : 3/4
CYStech Electronics Corp.
Characteristic Curves
Current Gain vs Collector Current
Saturation Voltage vs Collector Current
1000
1000
Saturation Voltage---(mV)
Current Gain---HFE
[email protected]=3V
100
[email protected]=2V
10
[email protected]=20IB
100
[email protected]=20IB
10
1
10
100
1000
1
Collector Current---IC(mA)
On Voltage vs Collector Current
100
1000
Power Derating Curve
1000
Power Dissipation---PD(mW)
On Voltage---(mV)
800
VBE(on)@VCE=2V
100
700
600
500
400
300
200
100
0
1
10
100
Collector Current---IC(mA)
BTD1768A3
10
Collector Current---IC(mA)
1000
0
50
100
150
200
Ambient Temperature---TA(℃)
CYStek Product Specification
Spec. No. : C304A3
Issued Date : 2003.07.28
Revised Date :2004.12.23
Page No. : 4/4
CYStech Electronics Corp.
TO-92 Dimension
α2
A
Marking:
B
1
2
3
D1768
α3
C
D
H
I
G
α1
Style: Pin 1.Emitter 2.Collector 3.Base
E
F
3-Lead TO-92 Plastic Package
CYStek Package Code: A3
*: Typical
Inches
Min.
Max.
0.1704 0.1902
0.1704 0.1902
0.5000
0.0142 0.0220
*0.0500
0.1323 0.1480
DIM
A
B
C
D
E
F
Millimeters
Min.
Max.
4.33
4.83
4.33
4.83
12.70
0.36
0.56
*1.27
3.36
3.76
DIM
G
H
I
α1
α2
α3
Inches
Min.
Max.
0.0142 0.0220
*0.1000
*0.0500
*5°
*2°
*2°
Millimeters
Min.
Max.
0.36
0.56
*2.54
*1.27
*5°
*2°
*2°
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
• Lead: 42 Alloy ; solder plating
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
BTD1768A3
CYStek Product Specification