FSX017X GaAs FET & HEMT Chips FEATURES • Medium Power Output: P1dB=21.5dBm(Typ.)@8.0GHz • High Power Gain: G1dB=11dB(Typ.)@8.0GHz • Proven Reliability Drain DESCRIPTION Source The FSX017X is a general purpose GaAs FET designed for medium power applications up to 12GHz. These devices have a wide dynamic range and are suitable for use in medium power, wide band, linear drive amplifiers or oscillators. Source Gate Fujitsu’s stringent Quality Assurance Program assures the highest reliability and consistent performance. ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C) Item Condition Symbol Rating Unit Drain-Source Voltage VDS 12 V Gate-Source Voltage VGS -5 V Total Power Dissipation Ptot 1.0 W Storage Temperature Tstg -65 to +175 °C Channel Temperature Tch 175 °C Tc = 25°C Fujitsu recommends the following conditions for the reliable operation of GaAs FETs: 1. The drain - source operating voltage (VDS) should not exceed 8 volts. 2. The forward and reverse gate currents should not exceed 0.7 and -0.1 mA respectively with gate resistance of 2000Ω. 3. The operating channel temperature (Tch) should not exceed 145°C. ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C) Item Saturated Drain Current Symbol IDSS Test Conditions VDS = 3V, VGS = 0V Min. 35 Limit Typ. Max. 55 75 Unit mA Transconductance gm VDS = 3V, IDS = 27mA - 50 - mS Pinch-off Voltage Vp VDS = 3V, IDS = 2.7mA -0.7 -1.2 -1.7 V IGS = -2.7µA -5.0 - - V - 2.5 - dB - 10.5 - dB f = 4GHz VDS = 8V, f = 8GHz 20.5 IDS = 0.7 IDSS f = 12GHz - 21.5 21.5 20.5 - f = 4GHz VDS = 8V, f = 8GHz 10.0 IDS = 0.7 IDSS f = 12GHz - 15.0 dBm dBm dBm dB 11.0 7.5 Channel to Case 120 Gate Source Breakdown Voltage VGSO Noise Figure NF Associated Gain Gas Output Power at 1 dB G.C.P. Power Gain at 1 dB G.C.P. Thermal Resistance P1dB G1dB Rth VDS = 3V, IDS = 10mA f = 8GHz - dB dB 150 °C/W G.C.P.: Gain Compression Point Note: RF parameter sample size 10pcs. criteria (accept/reject)=(2/3) The chip must be enclosed in a hermetically sealed environment for optimum performance and reliability. Edition 1.2 July 1999 - - 1 FSX017X GaAs FET & HEMT Chips Total Power Dissipation (W) POWER DERATING CURVE DRAIN CURRENT vs. DRAIN-SOURCE VOLTAG 70 Drain Current (mA) 1.0 0.8 0.6 0.4 0.2 60 VGS = 0V 50 -0.2V -0.4V 40 -0.6V 30 -0.8V 20 -1.0V 10 0 50 100 150 -1.2V 2 200 4 OUTPUT POWER vs. INPUT POWER 8GHz 12GHz 22 18 P1dB (dBm) Pout 16 14 60 f=4GHz 8GHz 12 10 P1dB vs. VDS 12GHz ηadd 10 40 20 ηadd (%) Output Power (dBm) 20 f=4GHz IDS = 0.7I DSS 8 Drain-Source Voltage (V) Case Temperature (°C) 22 VDS = 8V 6 f = 8GHz IDS = 0.7 IDSS 20 18 16 14 8 -4 -2 0 2 4 6 8 4 10 12 5 6 7 8 Drain-Source Voltage (V) Input Power (dBm) 2 FSX017X GaAs FET & HEMT Chips S-PARAMETERS VDS = 8V, IDS = 35mA FREQUENCY (MHZ) MAG S11 ANG MAG S21 ANG MAG S12 S22 1000 .989 -24.0 4.538 162.3 .013 76.7 .837 -6.1 2000 .960 -46.5 4.260 145.7 .025 65.4 .820 -11.9 3000 .925 -66.6 3.890 130.9 .035 55.1 .801 -16.9 4000 .890 -84.0 3.493 117.7 .042 46.0 .782 -21.6 5000 .860 -99.0 3.132 106.3 .048 38.6 .764 -25.9 6000 .833 -111.8 2.814 95.9 .052 32.5 .751 -29.9 7000 .814 -122.6 2.525 86.5 .054 27.4 .740 -33.8 8000 .799 -132.1 2.294 78.2 .057 23.2 .733 -37.8 ANG MAG ANG 9000 .788 -140.6 2.095 70.2 .060 18.6 .726 -41.7 10000 .780 -148.1 1.931 62.8 .061 15.1 .720 -45.7 11000 .773 -154.7 1.782 55.5 .063 12.0 .716 -49.7 12000 .768 -160.9 1.646 48.7 .064 9.1 .710 -53.6 13000 .762 -166.3 1.536 42.5 .065 5.9 .704 -57.6 14000 .759 -171.4 1.442 36.4 .065 2.6 .702 -61.4 15000 .759 -176.0 1.343 29.7 .065 2.1 .699 -65.4 16000 .759 179.6 1.269 25.1 .068 -.2 .699 -69.5 17000 .764 175.6 1.215 18.1 .066 -3.1 .697 -73.4 18000 .766 171.6 1.137 12.7 .069 -3.6 .695 -77.7 19000 .771 167.7 1.087 7.5 .071 -6.6 .694 -81.8 20000 .778 164.1 1.042 1.2 .070 -10.1 .691 -85.4 NOTE:* The data includes bonding wires. n: number of wires Gate n=1 (0.1mm length, 25µm Dia Au wire) Drain n=1 (0.1mm length, 25µm Dia Au wire) Source n=4 (0.2mm length, 25µm Dia Au wire) 3 Download S-Parameters, click here FSX017X GaAs FET & HEMT Chips CHIP OUTLINE 420±20 100 Source Source 100 200 Drain Gate 100 450±20 100 (Unit: µm) 100 100 Die Thickness: 100±20µm For further information please contact: FUJITSU COMPOUND SEMICONDUCTOR, INC. 2355 Zanker Rd. San Jose, CA 95131-1138, U.S.A. Phone: (408) 232-9500 FAX: (408) 428-9111 www.fcsi.fujitsu.com FUJITSU MICROELECTRONICS EUROPE, GmbH Quantum Devices Division Network House Norreys Drive Maidenhead, Berkshire SL6 4FJ Phone:+44 (0)1628 504800 FAX:+44 (0)1628 504888 CAUTION Fujitsu Compound Semiconductor Products contain gallium arsenide (GaAs) which can be hazardous to the human body and the environment. For safety, observe the following procedures: • Do not put these products into the mouth. • Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these by-products are dangerous to the human body if inhaled, ingested, or swallowed. • Observe government laws and company regulations when discarding this product. This product must be discarded in accordance with methods specified by applicable hazardous waste procedures. Fujitsu Limited reserves the right to change products and specifications without notice. The information does not convey any license under rights of Fujitsu Limited or others. © 1998 FUJITSU COMPOUND SEMICONDUCTOR, INC. Printed in U.S.A. FCSI0598M200 4