HI-SINCERITY Spec. No. : MOS200519 Issued Date : 2005.12.01 Revised Date : 2005.12.16 Page No. : 1/5 MICROELECTRONICS CORP. H50N03E H50N03E Pin Assignment Tab 3-Lead Plastic TO-220AB Package Code: E Pin 1: Gate Pin 2 & Tab: Drain Pin 3: Source N-Channel Enhancement-Mode MOSFET (25V, 50A) Features • RDS(on)=11mΩ@VGS=10V, ID=30A • RDS(on)=18mΩ@VGS=4.5V, ID=30A • Advanced trench process technology • High Density Cell Design for Ultra Low On-Resistance • Specially Designed for DC/DC Converters and Motor Drivers • Fully Characterized Avalanche Voltage and Current • Improved Shoot-Through FOM 1 2 3 D Internal Schematic Diagram G S Maximum Ratings & Thermal Characteristics (TA=25oC unless otherwise noted) Parameter Symbol Value Units Drain-Source Voltage VDS 25 V Gate-Source Voltage VGS ±20 V Continuous Drain Current ID 50 A Pulsed Drain Current *1 IDM 200 A Maximum Power Dissipation @ TC=25oC PD 70 Operating Junction and Storage Temperature Range W o TJ,Tstg -55 to 150 EAS 300 Junction-to-Case Thermal Resistance RθJC 2.1 O C/W Junction-to-Ambient Thermal Resistance(PCB mounted)*2 RθJA 55 O C/W Avalanche Energy with Single Pulse ID=35A, VDD=20V, L=0.14mH C mJ *1: Maximum DC current limited by the package. *2: 1-in2 2oz Cu PCB board Switching Test Circuit Switching Waveforms VDD ton td(on) VIN D VGEN RG VOUT Output, VOUT G toff tr td(off) 90% 10% tf 90 % 10% Inverted 90% S H50N03E 50% Input, VIN 10% 50% Pulse Width HSMC Product Specification HI-SINCERITY Spec. No. : MOS200519 Issued Date : 2005.12.01 Revised Date : 2005.12.16 Page No. : 2/5 MICROELECTRONICS CORP. ELectrical Characteristics Characteristic Symbol Test Condition Min. Typ. Max. Unit VGS=0V, ID=250uA 25 - - V VGS=4.5V, ID=30A - - 18 VGS=10V, ID=30A - - 11 VDS=VGS, ID=250uA 1 1.6 3 V Static Drain-Source Breakdown Voltage BVDSS Drain-Source On-State Resistance RDS(on) Gate Threshold Voltage VGS(th) mΩ Zero Gate Voltage Drain Current IDSS VDS=24V, VGS=0V - - 1 uA Gate Body Leakage IGSS VGS=±20V, VDS=0V - - ±100 nA Gate Resistance Rg VDS=0V, VGS=1V at 1MHz - 1 - Ω Forward Transconductance gfs VDS=10V, ID=35A - 6 - S - 18.4 - - 3.57 - Dynamic Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd - 2.9 - Turn-On Delay Time td(on) - 11.7 - Turn-On Rise Time tr VDD=15V, RL=15Ω, ID=1A - 3.87 - Turn-Off Delay Time td(off) VGEN=10V, RG=24Ω - 32.13 - VDS=15V, ID=35A, VGS=10V nC nS Turn-Off Fall Time tf - 5.4 - Input Capacitance Ciss - 1176.3 - Output Capacitance Coss - 268.43 - Reverse Transfer Capacitance Crss - 142.67 - IS - - 35 A - 0.87 1.5 V VDS=15V, VGS=0V, f=1MHz pF Source-Drain Diode Max. Diode Forward Current Diode Forward Voltage VSD IS=20A, VGS=0V NOTE: Pulse Test: Pulse Width ≤300us, Duty Cycle≤2% H50N03E HSMC Product Specification HI-SINCERITY Spec. No. : MOS200519 Issued Date : 2005.12.01 Revised Date : 2005.12.16 Page No. : 3/5 MICROELECTRONICS CORP. Characteristics Curve Fig.1 Output Characteristic Fig.2 Transfer Characteristic 80 60 VGS=5.0V,6.0V,10.0V VDS=10V ID, Drain Source Current (A) ID, Drain-to-Source Current (A) 4.5V 60 4.0V 40 3.5V 20 40 o 25 C 20 o TJ=125 C 3.0V o -55 C 0 0 0 1 2 3 4 5 2 2.5 3 V DS, Drain-to-Source Voltage (V) 3.5 4 4.5 5 VGS, Gate-to-Source Voltage (V) Fig.3 On Resistance & Drain Current Fig.4 On Resistance & Gate to Source Voltage 40 60 ID=30A RDS(ON), On-Resistance (mohm) RDS(ON), On-Resistance (mohm) 35 30 25 VGS=4.5V 20 15 VGS=10.0V 10 50 40 30 o 125 C 20 10 5 o TJ =25 C 0 0 0 20 40 60 2 80 4 ID, Drain Current (A) Fig.5 On Resistance & Junction Temperature 8 10 Fig.6 Capacitance 3000 1.6 VGS=10V ID=30A f=1MHz VGS=0V Ciss RDS(ON), On-Resistance (mohm) RDS(ON), On-Resistance (Normalized)…. 6 VGS, Gate-to-Source Voltage (V) 1.4 1.2 1 0.8 2500 2000 1500 1000 500 Coss, Crss 0.6 0 -50 -25 0 25 50 75 100 o TJ, Junction Temperature ( C) H50N03E 125 150 0 5 10 15 20 25 VDS, Drain-to-Source Voltage (V) HSMC Product Specification HI-SINCERITY Spec. No. : MOS200519 Issued Date : 2005.12.01 Revised Date : 2005.12.16 Page No. : 4/5 MICROELECTRONICS CORP. TO-220AB Dimension DIM A B C D E F G H I J K L M N O P Marking: A F B Pb Free Mark Pb-Free: " . " (Note) Normal: None H E C D E 5 0N0 3 Date Code H M I K 3 G N 2 1 Tab O P J L Control Code Note: Green label is used for pb-free packing Pin Style: 1.Gate 2 & Tab.Drain 3.Source Material: • Lead solder plating: Sn60/Pb40 (Normal), Sn/3.0Ag/0.5Cu or Pure-Tin (Pb-free) • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 Min. 5.58 8.38 4.40 1.15 0.35 2.03 9.66 3.00 0.75 2.54 1.14 12.70 14.48 Max. 7.49 8.90 4.70 1.39 0.60 2.92 10.28 *16.25 *3.83 4.00 0.95 3.42 1.40 *2.54 14.27 15.87 *: Typical, Unit: mm 3-Lead TO-220AB Plastic Package HSMC Package Code: E Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC. • HSMC reserves the right to make changes to its products without notice. • HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: • Head Office (Hi-Sincerity Microelectronics Corp.): 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C. Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454 • Factory 1: No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C Tel: 886-3-5983621~5 Fax: 886-3-5982931 H50N03E HSMC Product Specification HI-SINCERITY Spec. No. : MOS200519 Issued Date : 2005.12.01 Revised Date : 2005.12.16 Page No. : 5/5 MICROELECTRONICS CORP. Soldering Methods for HSMC’s Products 1. Storage environment: Temperature=10oC~35oC Humidity=65%±15% 2. Reflow soldering of surface-mount devices Figure 1: Temperature profile tP Critical Zone TL to TP TP Ramp-up TL tL Temperature Tsmax Tsmin tS Preheat Ramp-down 25 t 25oC to Peak Time Profile Feature Sn-Pb Eutectic Assembly Pb-Free Assembly <3oC/sec <3oC/sec - Temperature Min (Tsmin) 100oC 150oC - Temperature Max (Tsmax) 150oC 200oC 60~120 sec 60~180 sec <3oC/sec <3oC/sec 183oC 217oC Average ramp-up rate (TL to TP) Preheat - Time (min to max) (ts) Tsmax to TL - Ramp-up Rate Time maintained above: - Temperature (TL) - Time (tL) 60~150 sec Peak Temperature (TP) Time within 5oC of actual Peak Temperature (tP) Ramp-down Rate Time 25oC to Peak Temperature o o 60~150 sec 240 C +0/-5 C 260oC +0/-5oC 10~30 sec 20~40 sec <6oC/sec <6oC/sec <6 minutes <8 minutes Peak temperature Dipping time 245oC ±5oC 5sec ±1sec 3. Flow (wave) soldering (solder dipping) Products Pb devices. Pb-Free devices. H50N03E o o 260 C +0/-5 C 5sec ±1sec HSMC Product Specification