HI-SINCERITY Spec. No. : HN200212 Issued Date : 2002.07.01 Revised Date : 2004.09.08 Page No. : 1/5 MICROELECTRONICS CORP. HMBT9014 NPN EPITAXIAL PLANAR TRANSISTOR Description The HMBT9014 is designed for use in pre-amplifier of low level and low noise. Features SOT-23 • High Total Power Dissipation (PD: 225mW) • Complementary to HMBT9015 • High hFE and Good Linearity Absolute Maximum Ratings • Maximum Temperatures Storage Temperature ........................................................................................................................... -55 ~ +150 °C Junction Temperature ................................................................................................................... +150 °C Maximum • Maximum Power Dissipation Total Power Dissipation (TA=25°C) ............................................................................................................... 225 mW • Maximum Voltages and Currents (TA=25°C) VCBO Collector to Base Voltage ........................................................................................................................... 50 V VCEO Collector to Emitter Voltage ........................................................................................................................ 45 V VEBO Emitter to Base Voltage ................................................................................................................................ 5 V IC Collector Current ........................................................................................................................................ 100 mA Electrical Characteristics (TA=25°C) Symbol Min. Typ. Max. Unit Test Conditions BVCBO 50 - - V IC=100uA, IE=0 BVCEO 45 - - V IC=1mA, IB=0 BVEBO 5 - - V IE=100uA, IC=0 ICBO - - 50 nA VCB=50V, IE=0 IEBO - - 50 nA VEB=5V, IC=0 *VCE(sat) - 0.14 0.3 V IC=100mA, IB=5mA *VBE(sat) - 0.84 1 V IC=100mA, IB=5mA VBE(on) 0.58 0.63 0.7 V VCE=5V, IC=2mA *hFE 100 280 1000 Cob - 2.20 3.5 pF fT 150 270 - MHz VCE=5V, IC=1mA VCB=10V, f=1MHz, IE=0 VCE=5V, IC=10mA *Pulse Test: Pulse Width ≤380us, Duty Cycle≤2% Classification on hFE Rank (Marking Code) B (C4B) C (C4C) D (C4D) Range 100-300 200-600 400-1000 HMBT9014 HSMC Product Specification HI-SINCERITY Spec. No. : HN200212 Issued Date : 2002.07.01 Revised Date : 2004.09.08 Page No. : 2/5 MICROELECTRONICS CORP. Characteristics Curve Current Gain & Collector Current Saturation Voltage & Collector Current 1000 1000 VCE(sat) @ IC=20IB o Saturation Voltage (mV) 125 C o hFE 25 C o 75 C 100 o 25 C o 125 C 100 o 75 C hFE @ VCE=5V 10 10 0.1 1 10 100 0.1 1 Collector Current-IC (mA) Saturation Voltage & Collector Current 100 Saturation Voltage & Collector Current 1000 10000 VCE(sat) @ IC=10IB VBE(sat) @ IC=20IB Saturation Voltage (mV) Saturation Voltage (mV) 10 Collector Current-IC (mA) o 75 C 100 o 125 C o 25 C o 75 C 1000 o 25 C o 125 C 10 100 0.1 1 10 100 0.1 1 Collector Current-IC (mA) 10 100 Collector Current-IC (mA) Saturation Voltage & Collector Current VBE(ON) & Collector Current 10000 10000 VBE(ON) (mV) Saturation Voltage (mV) VBE(ON) @ VCE=5V o 75 C 1000 o 25 C o 75 C 1000 o 25 C o 125 C o 125 C VBE(s at) @ IC=10IB 100 100 0.1 1 10 Collector Current-IC (mA) HMBT9014 100 1000 0.1 1 10 100 1000 Collector Current-IC (mA) HSMC Product Specification HI-SINCERITY Spec. No. : HN200212 Issued Date : 2002.07.01 Revised Date : 2004.09.08 Page No. : 3/5 MICROELECTRONICS CORP. Capacitance & Reverse-Biased Voltage Cutoff Frequency & Collector Current 1000 Cutoff Frequency (MHz).. Capacitance (pF) 100 10 Cob 1 0.1 100 10 1 10 Reverse-Biased Voltage (V) HMBT9014 VCE=1V 100 1 10 100 1000 Collector Current (mA) HSMC Product Specification HI-SINCERITY Spec. No. : HN200212 Issued Date : 2002.07.01 Revised Date : 2004.09.08 Page No. : 4/5 MICROELECTRONICS CORP. SOT-23 Dimension DIM A B C D G H J K L S V Marking: A Rank Code L (B,C,D) C 4 Pb Free Mark 3 Pb-Free: " " (Note) Normal: None B S 1 V 2 Note: Pb-free product can distinguish by the green label or the extra description on the right side of the label. G Pin Style: 1.Base 2.Emitter 3.Collector D H K Max. 3.04 1.60 1.30 0.50 2.30 0.10 0.177 0.67 1.15 2.75 0.65 *: Typical, Unit: mm Material: • Lead solder plating: Sn60/Pb40 (Normal), Sn/3.0Ag/0.5Cu or Pure-Tin (Pb-free) • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 C Min. 2.80 1.20 0.89 0.30 1.70 0.013 0.085 0.32 0.85 2.10 0.25 J 3-Lead SOT-23 Plastic Surface Mounted Package HSMC Package Code: N Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC. • HSMC reserves the right to make changes to its products without notice. • HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: • Head Office (Hi-Sincerity Microelectronics Corp.): 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C. Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454 • Factory 1: No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C Tel: 886-3-5983621~5 Fax: 886-3-5982931 HMBT9014 HSMC Product Specification HI-SINCERITY Spec. No. : HN200212 Issued Date : 2002.07.01 Revised Date : 2004.09.08 Page No. : 5/5 MICROELECTRONICS CORP. Soldering Methods for HSMC’s Products 1. Storage environment: Temperature=10oC~35oC Humidity=65%±15% 2. Reflow soldering of surface-mount devices Figure 1: Temperature profile tP Critical Zone TL to TP TP Ramp-up TL tL Temperature Tsmax Tsmin tS Preheat Ramp-down 25 t 25oC to Peak Time Profile Feature Sn-Pb Eutectic Assembly Pb-Free Assembly <3 C/sec <3oC/sec - Temperature Min (Tsmin) 100oC 150oC - Temperature Max (Tsmax) 150oC 200oC 60~120 sec 60~180 sec <3oC/sec <3oC/sec 183oC 217oC Average ramp-up rate (TL to TP) o Preheat - Time (min to max) (ts) Tsmax to TL - Ramp-up Rate Time maintained above: - Temperature (TL) - Time (tL) 60~150 sec Peak Temperature (TP) Time within 5oC of actual Peak Temperature (tP) Ramp-down Rate Time 25oC to Peak Temperature o o 60~150 sec 240 C +0/-5 C 260oC +0/-5oC 10~30 sec 20~40 sec <6oC/sec <6oC/sec <6 minutes <8 minutes Peak temperature Dipping time 245 C ±5 C 5sec ±1sec 3. Flow (wave) soldering (solder dipping) Products Pb devices. Pb-Free devices. HMBT9014 o o o o 260 C +0/-5 C 5sec ±1sec HSMC Product Specification