Spec. No. : C208N3G Issued Date : 2002.05.11 Revised Date : 2013.05.08 Page No. : 1/7 CYStech Electronics Corp. General Purpose NPN Epitaxial Planar Transistor BTC3906N3 Description The BTC3906N3 is designed for general purpose applications requiring high breakdown voltage. Features • High collector-emitter breakdown voltage. (BVCEO=160V @ IC=1mA) • Complement to BTA1514N3 • Pb-free and Halogen-free package Symbol Outline SOT-23 BTC3906N3 B：Base C：Collector E：Emitter Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation (TA=25°C) Power Dissipation (TC=25°C) Thermal Resistance, Junction to Ambient (Note ) Thermal Resistance, Junction to Case Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PD PD RθJA RθJC Tj Tstg Limits 180 160 6 600 225 (Note) 560 556 (Note) 223 150 -55~+150 Unit V V V mA mW mW °C/W °C/W °C °C Note : Free air condition. BTC3906N3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C208N3G Issued Date : 2002.05.11 Revised Date : 2013.05.08 Page No. : 2/7 Characteristics (Ta=25°C) Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat)1 *VCE(sat)2 *VBE(sat)1 *VBE(sat)2 *hFE1 *hFE2 *hFE3 *hFE4 fT Cob Min. 180 160 6 100 100 50 120 100 - Typ. 0.1 - Max. 50 50 0.15 0.2 1 1 390 6 Unit V V V nA nA V V V V MHz pF Test Conditions IC=100μA IC=1mA IE=10μA VCB=120V VEB=4V IC=10mA, IB=1mA IC=50mA, IB=5mA IC=10mA, IB=1mA IC=50mA, IB=5mA VCE=5V, IC=1mA VCE=5V, IC=10mA VCE=5V, IC=50mA VCE=6V, IC=2mA VCE=20V, IC=10mA, f=100MHz VCB=20V, IE=0A,f=1MHz *Pulse Test: Pulse Width ≤380us, Duty Cycle≤2% Classification Of hFE 4 Rank Range Q 120~270 R 180~390 Ordering Information Device HFE rank BTC3906N3-Q-T1-G Q BTC3906N3-R-T1-G R BTC3906N3 Package SOT-23 (Pb-free and Halogen-free package) SOT-23 (Pb-free and Halogen-free package) Shipping 3000 pcs / Tape & Reel 3000 pcs / Tape & Reel CYStek Product Specification CYStech Electronics Corp. Spec. No. : C208N3G Issued Date : 2002.05.11 Revised Date : 2013.05.08 Page No. : 3/7 Typical Characteristics Emitter Grounded Output Characteristics Emitter Grounded Output Characteristics 0.08 0.18 1mA 0.06 500uA 400uA 300uA 0.05 0.04 200uA 0.03 IB=100uA 0.02 Collector Current---IC(A) Collector Current---IC(A) 5mA 0.16 0.07 0.01 0.14 2.5mA 2mA 1.5mA 0.12 0.1 0.08 1mA IB=500uA 0.06 0.04 0.02 0 0 0 1 2 3 4 5 Collector-to-Emitter Voltage---VCE(V) 6 0 Current Gain vs Collector Current 6 Saturation Voltage vs Collector Current 1000 1000 Ta=125°C Ta=75°C Ta=25°C Ta=0°C Ta=-40°C VCESAT=10IB Ta=125°C Ta=75°C Ta=25°C Ta=0°C Ta=-40°C Saturation Voltage---(mV) Current Gain---HFE 1 2 3 4 5 Collector-to-Emitter Voltage---VCE(V) 100 100 VCE=5V 10 10 0.1 1 10 Collector Current---IC(mA) 100 1 100 On Voltage vs Collector Current Saturation Voltage vs Collector Current 10000 10000 1000 Ta=125°C Ta=75°C Ta=25°C Ta=0°C Ta=-40°C VBEON@VCE=6V On Voltage---(mV) VCESAT=50IB Saturation Voltage---(mV) 10 Collector Current---IC(mA) 100 Ta=-40°C Ta=0°C Ta=25°C Ta=75°C Ta=125°C 1000 100 10 0.1 BTC3906N3 1 10 Collector Current---IC(mA) 100 1 10 Collector Current---IC(mA) 100 CYStek Product Specification Spec. No. : C208N3G Issued Date : 2002.05.11 Revised Date : 2013.05.08 Page No. : 4/7 CYStech Electronics Corp. Typical Characteristics(Cont.) Saturation Voltage vs Collector Current Current Gain vs Collector Current 1000 10000 Current Gain--- HFE Saturation Voltage---(mV) VBESAT@IC=10IB 1000 Ta=-40°C Ta=0°C Ta=25°C Ta=75°C Ta=125°C 100 VCE=5V 100 VCE=2V VCE=1V 10 1 10 Collector Current---IC(mA) 100 0.1 Cutoff Frequency vs Collector Current 100 Capacitance vs Reverse-biased Voltage 1000 100 VCE=10V Capacitance---(pF) Cutoff Frequency---fT(MHz) 1 10 Collector Current--- IC(mA) 100 Cib 10 Cob 10 1 0.1 1 10 Collector Current---IC(mA) 100 0.1 1 10 Reverse-biased Voltage---VR(V) 100 Power Derating Curve Power Dissipation---PD(mW) 250 200 150 100 50 0 0 50 100 150 200 Ambient Temperature---TA(℃) BTC3906N3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C208N3G Issued Date : 2002.05.11 Revised Date : 2013.05.08 Page No. : 5/7 Reel Dimension Carrier Tape Dimension BTC3906N3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C208N3G Issued Date : 2002.05.11 Revised Date : 2013.05.08 Page No. : 6/7 Recommended wave soldering condition Product Pb-free devices Peak Temperature 260 +0/-5 °C Soldering Time 5 +1/-1 seconds Recommended temperature profile for IR reflow Profile feature Average ramp-up rate (Tsmax to Tp) Preheat −Temperature Min(TS min) −Temperature Max(TS max) −Time(ts min to ts max) Time maintained above: −Temperature (TL) − Time (tL) Peak Temperature(TP) Time within 5°C of actual peak temperature(tp) Ramp down rate Time 25 °C to peak temperature Sn-Pb eutectic Assembly Pb-free Assembly 3°C/second max. 3°C/second max. 100°C 150°C 60-120 seconds 150°C 200°C 60-180 seconds 183°C 60-150 seconds 240 +0/-5 °C 217°C 60-150 seconds 260 +0/-5 °C 10-30 seconds 20-40 seconds 6°C/second max. 6 minutes max. 6°C/second max. 8 minutes max. Note : All temperatures refer to topside of the package, measured on the package body surface. BTC3906N3 CYStek Product Specification Spec. No. : C208N3G Issued Date : 2002.05.11 Revised Date : 2013.05.08 Page No. : 7/7 CYStech Electronics Corp. SOT-23 Dimension A Marking: L Date Code G1 TE S B □□ 3 2 1 G V 3-Lead SOT-23 Plastic Surface Mounted Package CYStek Package Code: N3 C Style: Pin 1.Base 2.Emitter 3.Collector D K H J *: Typical Inches Min. Max. 0.1102 0.1204 0.0472 0.0630 0.0335 0.0512 0.0118 0.0197 0.0669 0.0910 0.0005 0.0040 DIM A B C D G H Millimeters Min. Max. 2.80 3.04 1.20 1.60 0.89 1.30 0.30 0.50 1.70 2.30 0.013 0.10 DIM J K L S V Inches Min. Max. 0.0034 0.0070 0.0128 0.0266 0.0335 0.0453 0.0830 0.1083 0.0098 0.0256 Millimeters Min. Max. 0.085 0.177 0.32 0.67 0.85 1.15 2.10 2.75 0.25 0.65 Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: • Lead: Pure tin plated. • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0. Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. BTC3906N3 CYStek Product Specification