BTC3906N3

Spec. No. : C208N3G
Issued Date : 2002.05.11
Revised Date : 2013.05.08
Page No. : 1/7
CYStech Electronics Corp.
General Purpose NPN Epitaxial Planar Transistor
BTC3906N3
Description
The BTC3906N3 is designed for general purpose applications requiring high breakdown voltage.
Features
• High collector-emitter breakdown voltage. (BVCEO=160V @ IC=1mA)
• Complement to BTA1514N3
• Pb-free and Halogen-free package
Symbol
Outline
SOT-23
BTC3906N3
B:Base
C:Collector
E:Emitter
Absolute Maximum Ratings (Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Power Dissipation (TA=25°C)
Power Dissipation (TC=25°C)
Thermal Resistance, Junction to Ambient (Note )
Thermal Resistance, Junction to Case
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
PD
PD
RθJA
RθJC
Tj
Tstg
Limits
180
160
6
600
225 (Note)
560
556 (Note)
223
150
-55~+150
Unit
V
V
V
mA
mW
mW
°C/W
°C/W
°C
°C
Note : Free air condition.
BTC3906N3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C208N3G
Issued Date : 2002.05.11
Revised Date : 2013.05.08
Page No. : 2/7
Characteristics (Ta=25°C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
*VCE(sat)1
*VCE(sat)2
*VBE(sat)1
*VBE(sat)2
*hFE1
*hFE2
*hFE3
*hFE4
fT
Cob
Min.
180
160
6
100
100
50
120
100
-
Typ.
0.1
-
Max.
50
50
0.15
0.2
1
1
390
6
Unit
V
V
V
nA
nA
V
V
V
V
MHz
pF
Test Conditions
IC=100μA
IC=1mA
IE=10μA
VCB=120V
VEB=4V
IC=10mA, IB=1mA
IC=50mA, IB=5mA
IC=10mA, IB=1mA
IC=50mA, IB=5mA
VCE=5V, IC=1mA
VCE=5V, IC=10mA
VCE=5V, IC=50mA
VCE=6V, IC=2mA
VCE=20V, IC=10mA, f=100MHz
VCB=20V, IE=0A,f=1MHz
*Pulse Test: Pulse Width ≤380us, Duty Cycle≤2%
Classification Of hFE 4
Rank
Range
Q
120~270
R
180~390
Ordering Information
Device
HFE rank
BTC3906N3-Q-T1-G
Q
BTC3906N3-R-T1-G
R
BTC3906N3
Package
SOT-23
(Pb-free and Halogen-free package)
SOT-23
(Pb-free and Halogen-free package)
Shipping
3000 pcs / Tape & Reel
3000 pcs / Tape & Reel
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C208N3G
Issued Date : 2002.05.11
Revised Date : 2013.05.08
Page No. : 3/7
Typical Characteristics
Emitter Grounded Output Characteristics
Emitter Grounded Output Characteristics
0.08
0.18
1mA
0.06
500uA
400uA
300uA
0.05
0.04
200uA
0.03
IB=100uA
0.02
Collector Current---IC(A)
Collector Current---IC(A)
5mA
0.16
0.07
0.01
0.14
2.5mA
2mA
1.5mA
0.12
0.1
0.08
1mA
IB=500uA
0.06
0.04
0.02
0
0
0
1
2
3
4
5
Collector-to-Emitter Voltage---VCE(V)
6
0
Current Gain vs Collector Current
6
Saturation Voltage vs Collector Current
1000
1000
Ta=125°C
Ta=75°C
Ta=25°C
Ta=0°C
Ta=-40°C
VCESAT=10IB
Ta=125°C
Ta=75°C
Ta=25°C
Ta=0°C
Ta=-40°C
Saturation Voltage---(mV)
Current Gain---HFE
1
2
3
4
5
Collector-to-Emitter Voltage---VCE(V)
100
100
VCE=5V
10
10
0.1
1
10
Collector Current---IC(mA)
100
1
100
On Voltage vs Collector Current
Saturation Voltage vs Collector Current
10000
10000
1000
Ta=125°C
Ta=75°C
Ta=25°C
Ta=0°C
Ta=-40°C
[email protected]=6V
On Voltage---(mV)
VCESAT=50IB
Saturation Voltage---(mV)
10
Collector Current---IC(mA)
100
Ta=-40°C
Ta=0°C
Ta=25°C
Ta=75°C
Ta=125°C
1000
100
10
0.1
BTC3906N3
1
10
Collector Current---IC(mA)
100
1
10
Collector Current---IC(mA)
100
CYStek Product Specification
Spec. No. : C208N3G
Issued Date : 2002.05.11
Revised Date : 2013.05.08
Page No. : 4/7
CYStech Electronics Corp.
Typical Characteristics(Cont.)
Saturation Voltage vs Collector Current
Current Gain vs Collector Current
1000
10000
Current Gain--- HFE
Saturation Voltage---(mV)
[email protected]=10IB
1000
Ta=-40°C
Ta=0°C
Ta=25°C
Ta=75°C
Ta=125°C
100
VCE=5V
100
VCE=2V
VCE=1V
10
1
10
Collector Current---IC(mA)
100
0.1
Cutoff Frequency vs Collector Current
100
Capacitance vs Reverse-biased Voltage
1000
100
VCE=10V
Capacitance---(pF)
Cutoff Frequency---fT(MHz)
1
10
Collector Current--- IC(mA)
100
Cib
10
Cob
10
1
0.1
1
10
Collector Current---IC(mA)
100
0.1
1
10
Reverse-biased Voltage---VR(V)
100
Power Derating Curve
Power Dissipation---PD(mW)
250
200
150
100
50
0
0
50
100
150
200
Ambient Temperature---TA(℃)
BTC3906N3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C208N3G
Issued Date : 2002.05.11
Revised Date : 2013.05.08
Page No. : 5/7
Reel Dimension
Carrier Tape Dimension
BTC3906N3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C208N3G
Issued Date : 2002.05.11
Revised Date : 2013.05.08
Page No. : 6/7
Recommended wave soldering condition
Product
Pb-free devices
Peak Temperature
260 +0/-5 °C
Soldering Time
5 +1/-1 seconds
Recommended temperature profile for IR reflow
Profile feature
Average ramp-up rate
(Tsmax to Tp)
Preheat
−Temperature Min(TS min)
−Temperature Max(TS max)
−Time(ts min to ts max)
Time maintained above:
−Temperature (TL)
− Time (tL)
Peak Temperature(TP)
Time within 5°C of actual peak
temperature(tp)
Ramp down rate
Time 25 °C to peak temperature
Sn-Pb eutectic Assembly
Pb-free Assembly
3°C/second max.
3°C/second max.
100°C
150°C
60-120 seconds
150°C
200°C
60-180 seconds
183°C
60-150 seconds
240 +0/-5 °C
217°C
60-150 seconds
260 +0/-5 °C
10-30 seconds
20-40 seconds
6°C/second max.
6 minutes max.
6°C/second max.
8 minutes max.
Note : All temperatures refer to topside of the package, measured on the package body surface.
BTC3906N3
CYStek Product Specification
Spec. No. : C208N3G
Issued Date : 2002.05.11
Revised Date : 2013.05.08
Page No. : 7/7
CYStech Electronics Corp.
SOT-23 Dimension
A
Marking:
L
Date
Code
G1
TE
S
B
□□
3
2
1
G
V
3-Lead SOT-23 Plastic
Surface Mounted Package
CYStek Package Code: N3
C
Style: Pin 1.Base 2.Emitter 3.Collector
D
K
H
J
*: Typical
Inches
Min.
Max.
0.1102 0.1204
0.0472 0.0630
0.0335 0.0512
0.0118 0.0197
0.0669 0.0910
0.0005 0.0040
DIM
A
B
C
D
G
H
Millimeters
Min.
Max.
2.80
3.04
1.20
1.60
0.89
1.30
0.30
0.50
1.70
2.30
0.013
0.10
DIM
J
K
L
S
V
Inches
Min.
Max.
0.0034 0.0070
0.0128 0.0266
0.0335 0.0453
0.0830 0.1083
0.0098 0.0256
Millimeters
Min.
Max.
0.085
0.177
0.32
0.67
0.85
1.15
2.10
2.75
0.25
0.65
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
• Lead: Pure tin plated.
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0.
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
BTC3906N3
CYStek Product Specification