NIKO-SEM P6803NAG N- & P-Channel Enhancement Mode Field Effect Transistor PRODUCT SUMMARY D1 V(BR)DSS RDS(ON) ID N-Channel 30 68mΩ 3.5A P-Channel -30 145mΩ -2A G1 D2 G2 D1 S1 D2 6 5 4 1 2 3 G1 S2 S2 S1 TSOP-6 Lead-Free G : GATE D : DRAIN S : SOURCE G2 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL N-Channel P-Channel UNITS Drain-Source Voltage VDS 30 -30 V Gate-Source Voltage VGS ±20 ±20 V 3.5 -2.3 2.8 -1.8 10 -10 Continuous Drain Current TC = 25 °C ID TC = 70 °C Pulsed Drain Current 1 IDM TC = 25 °C Power Dissipation PD TC = 70 °C Junction & Storage Temperature Range Lead Temperature (1/16” from case for 10 sec.) 1.15 A W 0.73 Tj, Tstg -55 to 150 TL 275 °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM UNITS Junction-to-Ambient t≦5sec RθJA 110 °C / W Junction-to-Ambient Steady State RθJA 150 °C / W Junction-to-Lead Steady State RθJL 80 °C / W 1 Pulse width limited by maximum junction temperature. Duty cycle ≤ 1% 2 1 MAR-09-2006 NIKO-SEM P6803NAG N- & P-Channel Enhancement Mode Field Effect Transistor TSOP-6 Lead-Free ELECTRICAL CHARACTERISTICS (TC = 25 °C, Unless Otherwise Noted) LIMITS PARAMETER SYMBOL TEST CONDITIONS MIN UNIT TYP MAX STATIC Drain-Source Breakdown Voltage Gate Threshold Voltage VGS = 0V, ID = 250µA N-Ch 30 VGS = 0V, ID = -250µA P-Ch -30 VDS = VGS, ID = 250µA N-Ch 1 1.5 2.5 P-Ch -1 -1.5 -2.5 V(BR)DSS VGS(th) VDS = VGS, ID = -250µA Gate-Body Leakage VDS = 0V, VGS = ±20V N-Ch ±100 VDS = 0V, VGS = ±20V P-Ch ±100 VDS = 24V, VGS = 0V N-Ch 1 P-Ch -1 VDS = 20V, VGS = 0V, TJ = 55 °C N-Ch 10 P-Ch -10 IGSS VDS = -24V, VGS = 0V Zero Gate Voltage Drain Current IDSS VDS = -20V, VGS = 0V, TJ = 55 °C On-State Drain Current1 ID(ON) VDS = 5V, VGS = 10V VDS =-5V, VGS = -10V Drain-Source Resistance1 On-State 8 P-Ch -8 A 98 P-Ch 185 245 N-Ch 55 68 P-Ch 115 145 N-Ch 4.5 P-Ch 3 N-Ch 200 N-Channel P-Ch 190 VGS = 0V, VDS = 15V, f = 1MHz N-Ch 40 P-Channel P-Ch 60 VGS = 0V, VDS = -15V, f = 1MHz N-Ch 20 P-Ch 30 mΩ RDS(ON) VGS = 10V, ID = 3.5A VGS = -10V, ID = -2.3A Forward Transconductance1 N-Ch 75 VGS = -4.5V, ID = -1.5A gfs nA µA N-Ch VGS = 4.5V, ID = 2A V VDS = 5V, ID = 2.5A VDS = -5V, ID = -2A S DYNAMIC Input Capacitance Output Capacitance Reverse Transfer Capacitance Ciss Coss Crss 2 pF MAR-09-2006 NIKO-SEM N- & P-Channel Enhancement Mode Field Effect Transistor N-Ch 6.5 8.5 P-Ch 4.5 6.0 ID = 2.5A N-Ch 1.2 P-Channel P-Ch 1.2 VDS = 0.5V(BR)DSS, VGS = -10V, N-Ch 1.6 ID = -2A P-Ch 0.9 N-Ch 7 11 P-Ch 8 12 N-Ch 12 18 P-Ch 11 18 N-Ch 12 18 P-Ch 14 21 N-Ch 7 11 ID ≅ -1A, VGS = -10V, RGEN = 6Ω P-Ch 8 12 Qg Gate-Source Charge2 Qgs Gate-Drain Charge2 Qgd Turn-On Delay Time2 td(on) N-Channel VDS = 15V, RL = 15Ω tr Turn-Off Delay Time2 ID ≅ 1A, VGS = 10V, RGEN = 6Ω P-Channel td(off) VDS = -15V, RL = 15Ω Fall Time 2 tf TSOP-6 Lead-Free N-Channel VDS = 0.5V(BR)DSS, VGS = 10V, Total Gate Charge2 Rise Time2 P6803NAG nC nS SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TC = 25 °C) Forward Voltage1 IF = 0.8A, VGS = 0V N-Ch 1.2 IF = -0.8A, VGS = 0V P-Ch -1.2 IF = 0.8A, dlF/dt = 100A / µS N-Ch 40 80 IF = -0.8A, dlF/dt = 100A / µS P-Ch 40 80 VSD Reverse Recovery Time trr V nS Pulse test : Pulse Width ≤ 300 µsec, Duty Cycle ≤ 2%. Independent of operating temperature. 3 Pulse width limited by maximum junction temperature. 1 2 REMARK: THIS PRODUCT MARKED WITH “51YWW” Orders for parts with Lead-Free plating can be placed using the PXXXXXXG parts name. 6 5 4 51YWW 1 2 3 Marking Description: 5 - N+P MOSFET 1 - Serial Number Y - Year W - Week 3 MAR-09-2006 NIKO-SEM N-CHANNEL On-Region Characteristics. 2 R , Noemalized Drain-source on-resistance 4.5V 8 4.0V 6 1.8 4 3.5V 2 4.5V 1.4 5.0V 1.2 0 1 6.0V 7.0V 1 3.0V 0 VGS= 4.0V 1.6 DS(ON) ID, Drain-source current(A) 6.0V TSOP-6 Lead-Free On-Resistance Variation with Drain Current and Gate Voltage. 10 VGS= 10V P6803NAG N- & P-Channel Enhancement Mode Field Effect Transistor 10V 0.8 2 3 0 4 2 VDS, Drain-Source Voltage(V) 4 6 8 10 ID, Drain Current(A) On-Resistance Variation with Gate-to-Source Voltage. RDS(ON), On-resistance(OHM) DS(ON) R , Normalized Drain-source on-resistance On-Resistance Variation with Temperature. 1.6 ID= 3.5A VGS= 10V 1.4 1.2 1 0.8 0.6 -50 0.275 ID=2A 0.225 0.175 0.125 TA= 125°C TA= 25°C 0.075 0.025 -25 0 25 75 50 100 125 4 2 150 TJ, Junction Temperature(°C) Is, Reverse Drain Current (A) 10 VDS= 5V ID, Drain Current(A) 125° C TA= -55° C 25° C 6 4 2 0 1 2 3 4 8 10 Body Diode Forword Voltage Variation with Source Current and Temperature. Transfer Characteristics. 8 6 VGS, Gate to Source Voltage(V) 5 6 10 VGS= 0V 1 TA= 125° C 25°C -55° C 0.1 0.01 0.001 0.0001 0 0.2 0.4 0.6 0.8 1 1.2 VSD, Body Diode Forword Voltage(V) VGS, Gate to Source Voltage(V) 4 MAR-09-2006 1.4 NIKO-SEM 400 10 ID = 3.5A 15V VDS= 5V Capacitance(pF) 8 10V VGS (Voltage) TSOP-6 Lead-Free Capacitance Characteristics Gate-Charge Characteristics 6 4 300 Ciss 200 Coss 100 2 Crss 0 0 0 1 2 3 4 5 6 0 7 5 15 20 25 30 Single Pulse Maximum Power Dissipation. Maximum Safe Operating Area. 5 30 100 us 10 T IMI N)L 4 1m s Power(W) S (O RD 3 10m s 1 100 ms 1s DC 0.3 VGS= 10V SINGLE PULSE RθJA=150° C/W TA=25° C 0.1 0.03 0.01 10 VDS,Drain to Source Voltage(V) Qg (nC) ID, Drain Current(A) P6803NAG N- & P-Channel Enhancement Mode Field Effect Transistor 0.1 0.3 1 3 2 VGS= 10V SINGLE PULSE RθJA=150°C/W TA=25°C 1 3 10 30 50 0 0.01 VDS, Drain-Source Voltage(V) 0.1 1 10 100 300 Single pulse time(SEC) 5 MAR-09-2006 NIKO-SEM P6803NAG N- & P-Channel Enhancement Mode Field Effect Transistor TSOP-6 Lead-Free P-CHANNEL On-Resistance Variation with Drain Current and Gate Voltage. On-Region Characteristics 3 ID,Drain Current(A) VGS= -10V - 6.0V 8 RDS(ON),Normalized Drain-Source On-Resistance 10 - 4.5V 2.5 - 4.0V 6 VGS=-3.5V - 3.5V 4 - 4.0V 2 - 4.5V - 5.0V 1.5 2 0 - 6.0V -10.0V 1 0.5 0 1 2 3 4 0 5 2 4 ID = -1.5A RDS(ON),On-Resistance(OHM) RDS(ON),Normalized Drain-Source On-Resistance 10 0.4 ID= -2.3A VGS= -10V 1.4 1.2 1 0.8 0.3 TA=125°C 0.2 TA=25°C 0.1 0.6 0 -50 -25 0 25 50 75 100 125 150 4 2 6 10 Body Diode Forward Voltage Variation With Source Current and Temperature. Transfer Characteristics 10 VDS= - 5V -IS,Reverse Drain Current(A) 5 25°C TA= - 55°C 4 125°C 3 2 1 0 1.5 5 - VGS,Gate To Source Voltage(V) TJ,Junction Temperature(°C) -ID,Drain Current(A) 8 On-Resistance Variation with Gate-to-Source Voltage. On-Resistance Variation with Temperature 1.6 6 - ID,Drain Current(A) - VDS,Drain-Source Voltage(V) VGS=0V 1 TA=125°C 0.1 25°C 0.01 - 55°C 0.001 0.0001 2.5 3.5 4.5 0 -VGS,Gate To Source Voltage(V) 0.2 0.4 0.6 0.8 1 1.2 1.4 -VSD,Body Diode Forward Voltage(V) 6 MAR-09-2006 NIKO-SEM Gate-Charge Characteristics ID = -2.0A Capacitance Characteristics V DS= -5V -10V Capacitance(pF) 8 VGS (Voltage) TSOP-6 Lead-Free 400 10 -15V 6 4 300 Ciss 200 100 2 Coss 0 Crss 0 0 1 2 5 4 3 6 0 5 10 Q g (nC) 20 25 30 Single Pulse Maximum Power Dissipation. 5 30 100 us 10 T IMI N)L 4 1m s Power(W) S (O RD 3 10m s 1 100 ms 1s DC 0.3 VGS= 10V SINGLE PULSE RθJA=150° C/W TA=25° C 0.1 0.03 0.01 15 VDS,Drain to Source Voltage(V) Maximum Safe Operating Area. ID, Drain Current(A) P6803NAG N- & P-Channel Enhancement Mode Field Effect Transistor 0.1 0.3 1 3 2 1 3 10 30 VGS= 10V SINGLE PULSE RθJA=150°C/W TA=25°C 0 0.01 50 0.1 1 VDS, Drain-Source Voltage(V) 10 100 300 Single pulse time(SEC) 1 D=0.5 0.5 P(pk) r(t), Normalized Effective Transient Thermal Resistance Transient Thermal Response Curve. 0.2 0.2 0.1 0.1 t2 0.05 0.05 0.02 RθJA(t) = r(t) * RθJA RθJA=150°C/W TJ-TA=P*RθJA(t) Duty Cycle, D= t1/ t2 0.02 0.01 Single Pulse 0.01 0.0001 t1 0.001 0.01 0.1 1 10 100 t1 Time(Sec) 7 MAR-09-2006 300 NIKO-SEM P6803NAG N- & P-Channel Enhancement Mode Field Effect Transistor TSOP-6 Lead-Free TSOP- 6 MECHANICAL DATA mm mm Dimension Dimension Min. Typ. A Max. 0.95 Min. Typ. Max. H 0.08 0.13 0.2 0.3 B 2.5 2.8 3.1 I C 1.5 1.6 1.7 J D 2.7 2.9 3.1 K E 0.7 1.2 L F 0 0.15 M G 0.3 0.5 N 0.4 0.6 H B C A I D E G F 8 MAR-09-2006