Databook.fxp 1/13/99 2:09 PM Page F-4 F-4 01/99 NJ14AL Process Silicon Junction Field-Effect Transistor ¥ Low-Noise, High Gain Amplifier ¥ Rf AMP to 1.0 Ghz G Absolute maximum ratings at TA = 25¡C Gate Current, Ig Operating Junction Temperature, Tj Storage Temperature, Ts S-D 10 mA +150°C – 65°C to +175°C S-D Devices in this Databook based on the NJ14AL Process. Datasheet G IF140, IF140A IF142 Die Size = 0.016" X 0.016" All Round Bond Pads = 0.0028" All Square Bond Pads = 0.004" Substrate is also Gate. At 25°C free air temperature: NJ14AL Process Static Electrical Characteristics Gate Source Breakdown Voltage V(BR)GSS Gate Reverse Current IGSS Gate Source Cutoff Voltage VGS(OFF) Drain Saturation Current (Pulsed) IDSS Min Typ – 15 – 22 – 2.0 – 0.5 0.5 10 Max Unit Test Conditions V IG = – 1 µA, VDS = ØV – 100 pA VGS = – 10V, VDS = ØV –7 V VGS = 10V, ID = 1 nA 20 mA VDS = 10V, VGS = ØV Dynamic Electrical Characteristics Common Source Forward Transconductance gfs 5.5 mS VDS = 10V, VGS = ØV f = 1 kHz Common Source Input Capacitance Ciss 2.3 pF VDS = 15V, VGS = ØV f = 1 MHz Common Source Reverse Transfer Capacitance Crss 0.5 pF VDS = 15V, VGS = ØV f = 1 MHz Equivalent Noise Voltage e¯ N 1000 N. Shiloh Road, Garland, TX 75042 (972) 487-1287 FAX (972) 276-3375 4 nV/√HZ VDS = 10V, ID = 5 mA f = 1 kHz www.interfet.com Databook.fxp 1/13/99 2:09 PM Page F-5 F-5 01/99 NJ14AL Process Silicon Junction Field-Effect Transistor Drain Current as a Function of VDS Gfs as a Function of VGS(OFF) VGS(OFF) = Ð2.2 V 10 10 Transconductance in mS Drain Current in µA Vgs = Ø V 8 Vgs = – 0.5 V 6 Vgs = –1.0 V 4 Vgs = –1.5 V 2 Vgs = –2.0 V 5 10 15 4 2 0 –1 –2 –3 –4 –5 Drain to Source Voltage in Volts Gate Source Cutoff Voltage in Volts Drain Saturation Current as a Function of VGS(OFF) Noise as a Function of Frequency –6 6 25 20 15 10 5 0 –1 –2 –3 –4 –5 VDG = 4 V ID = 5 mA 2 10 100 1K 10K Gate Source Cutoff Voltage in Volts Frequency in Hz Noise as a Function of Temperature Input Capacitance as a Function of VGS 100K Input Capacitance in pF 3.5 f = 1 kHz 6 f = 100 kHz 4 2 100 4 –6 8 Noise Voltage in V/√Hz 6 20 Noise Voltage in nV/√Hz Drain Saturation Current in mA 0 8 150 200 250 Temperature (K) 300 350 3.0 VDS = Ø V 2.5 VDS = 5 V 2.0 1.5 0 –4 –8 – 12 Gate Source Voltage in Volts – 16