Databook.fxp 1/13/99 2:09 PM Page F-34 F-34 01/99 NJ132L Process Silicon Junction Field-Effect Transistor ¥ Low-Noise Amplifier G Absolute maximum ratings at TA = 25¡C Gate Current, Ig Operating Junction Temperature, Tj Storage Temperature, Ts 10 mA +150°C – 65°C to +175°C S-D Devices in this Databook based on the NJ132L Process. S-D Datasheet 2N6451, 2N6452 2N6453, 2N6454 IF1320 IFN152 2SK152 G Die Size = 0.022" X 0.022" All Bond Pads = 0.004" Sq. Substrate is also Gate. At 25°C free air temperature: NJ132L Process Static Electrical Characteristics Gate Source Breakdown Voltage V(BR)GSS Reverse Gate Leakage Current IGSS Drain Saturation Current (Pulsed) IDSS Gate Source Cutoff Voltage VGS(OFF) Min Typ – 15 – 25 Max Unit Test Conditions V IG = – 1 µA, VDS = ØV – 100 nA VGS = – 10V, VDS = ØV 5 100 mA VDS = 10V, VGS = ØV – 0.5 –7 V VDS = 10V, ID = 1 nA mS VDS = 10V, VGS = ØV f = 1 kHz – 50 Dynamic Electrical Characteristics Forward Transconductance (pulsed) gfs 15 gfs 15 mS VDS = 10V, ID = 5 mA f = 1 kHz Input Capacitance Ciss 15 pF VDS = 10V, VGS = ØV f = 1 MHz Feedback Capacitance Ciss 3.5 pF VDS = ØV, VGS = – 10V f = 1 MHz Equivalent Noise Voltage e¯ N 1000 N. Shiloh Road, Garland, TX 75042 (972) 487-1287 FAX (972) 276-3375 1 nV/√HZ VDS = 4V, ID = 5 mA f = 1 kHz www.interfet.com Databook.fxp 1/13/99 2:09 PM Page F-35 F-35 01/99 NJ132L Process Silicon Junction Field-Effect Transistor Drain Current as a Function of VDS Drain Current as a Function of VGS(OFF) VGS(OFF) = Ð2.5 V 50 10 40 Drain Current in mA Drain Current in mA VGS = Ø V VGS = –0.5 V 30 VGS = –1.0 V 20 VGS = –1.5 V 10 IDSS = 8 mA 125°C 25°C 8 6 – 55°C 4 2 VGS = –2.0 V 5 15 20 0 – 0.2 – 0.4 – 0.6 – 0.8 – 1.0 Drain to Source Voltage in Volts Gate Source Voltage in Volts Transconductance as a Function of Drain Current Capacitance as a Function of Gate Source Voltage 50 20 40 16 Capacitance in pF Ciss IDSS = 40 mA 30 IDSS = 8 mA 20 10 0 Equivalent Noise Voltage (nV/√Hz) 10 4 8 12 16 8 Crss 4 0 –2 –4 –6 –8 Drain Current in mA Gate Source Voltage in Volts Noise as a Function of Frequency Noise as a Function of Temperature 1.5 VDG = 4 V ID = 5 mA 1.0 0.5 10 12 20 Equivalent Noise Voltage (nV/√Hz) Transconductance in mS 0 100 1K Frequency in Hz 10K 100K – 10 2.0 f = 1 kHz 1.5 1.0 f = 10 kHz 0.5 100 150 200 250 Temperature (K) 300 350